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Analog Power
AM4502AC
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
31 @ VGS = 4.5V
30
33 @ VGS = -4.5V
-30
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
ID (A)
6.9
-6.8
1
8
2
7
3
6
4
5
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol N-Channel P-Channel Units
Parameter
30
-30
Drain-Source Voltage
VDS
V
VGS
±12
±25
Gate-Source Voltage
o
TA=25 C
a
Continuous Drain Current
o
TA=70 C
b
Pulsed Drain Current
a
Continuous Source Current (Diode Conduction)
6.9
-8.5
5.4
-6.8
IDM
20
-50
IS
1.3
-2.1
2.1
2.1
1.3
1.3
ID
o
TA=25 C
a
Power Dissipation
o
TA=70 C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
Steady-State
A
W
o
-55 to 150
Symbol
t <= 10 sec
A
RθJA
Maximum
C
Units
62.5
o
110
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM4502A_G
Analog Power
AM4502AC
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Limits
Ch Min Typ
Max Unit
Static
Gate-Threshold Voltage
VGS(th)
Gate-Body Leakage
IGSS
Zero Gate Voltage Drain Current
IDSS
On-State Drain Current A
ID(on)
A
Drain-Source On-Resistance
rDS(on)
Forward TranconductanceA
gfs
A
Pulsed Source Current (Body Diode)
VGS = VDS , ID = 250 uA
N
0.6
VGS = VDS , ID = -250 uA
VGS = -20 V, VDS = 0 V
VGS = 12 V, VDS = 0 V
VDS = -24 V, VGS = 0 V
VDS = 24 V, VGS = 0 V
VDS = 5 V, VGS = 4.5 V
VDS = -5 V, VGS = -4.5 V
VGS = 4.5 V, ID = 6.9 A
VGS = -4.5 V, I D = -68 A
VDS = 15 V, ID = 6.9 A
VDS = -15 V, ID = -8.5 A
P
P
N
P
N
N
P
N
P
N
P
-1.0
V
±100
±100
-1
1
20
-20
nA
uA
A
31
33
25
10
S
5
ISM
mΩ
A
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
N-Channel
VDS=15V, VGS=4.5V, I D=6.9A
P-Channel
VDS =-15V, VGS =-4.5V, ID=-8.5A
N
P
N
P
N
6.0
13
1.0
5.8
1.5
P
12.0
N
P
N
P
N
P
N
P
7.4
15
4
16
22.2
62
3.6
46
nC
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
N-Chaneel
VDD =15V, VGS =4.5V, I D=1A ,
RGE N =6Ω,
P-Channel
VDD=-15V, VGS =-4.5V, ID=-1A
RGEN=6Ω
nS
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM4502A_G
Analog Power
AM4502AC
Typical Electrical Characteristics (P-Channel)
0 .0 4
4 .5 V
RDS(ON) Resistance (Ω)
IDS Drain Current (A)
50
40
5 Vthr ough 10 V
4V
30
20
3 .5
10
3
0 .0 3 2
VGS=4.5V
0 .0 2 4
VGS=10V
0 .0 16
0 .0 0 8
0
0
0
0 .5
1
1.5
2
2 .5
3
3 .5
0
4
20
30
40
50
I D Drain Current (A)
VDS (V)
Figure 1. On-Region Characteristics
Figure 2. On-Resistance with Drain Current
0 .0 6
1.6
1.4
Resistance (Ω )
VGS = 10 V
ID = 8 .5A
1.2
1.0
0.8
0 .0 5
0 .0 4
0 .0 3
0 .0 2
0 .0 1
R
Normalized R DS(on)
10
0.6
0
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
VGS Gate to Source Voltage (V)
TJ J uncatio n Temp erature (C)
Figure 3. On-Resistance Variation with Temperature
Figure 4. On-Resistance Variation with
Gate to Source Voltage
60
VD=VG
100
-55C
25C
40
I Source Current (A)
ID Drain Current (A)
50
30
125C
20
10
10
T J = 150 C
T J = 25C
1
0
0
1
2
3
4
5
6
0 .1
VGS Ga te to S o urc e Vo lta ge (V)
0
0 .2
0 .4
0 .6
0 .8
1
1 .2
VS D Source to Drain Voltage (V)
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
3
PRELIMINARY
Publication Order Number:
DS-AM4502A_G
Analog Power
AM4502AC
Typical Electrical Characteristics (P-Channel)
10
2000
8
1500
Capacitance (pF)
VGS (V)
Ciss
VD= 10V
ID= 8.5A
6
4
2
1000
0
0
5
10
15
20
25
Coss
500
Crss
0
30
0
5
10
QG, T otal Gate Charge (nC)
Figure 7. Gate Charge Characteristics
100
limited
RDS (ON)
15
20
VDS (V)
Figure 8. Capacitance Characteristics
ID
50
45
10 uS
10
40
POWER (W)
ID Current (A)
35
100 uS
1m S
1
10m S
1 100m S
0 .1
10S
100S
DC
30
25
20
15
10
5
0
0 .0 1
0 .1
1
10
0.001
100
VDS Drain to Source Voltage (V)
Figure 9. Maximum Safe Operating Area
0.1
10
1000
T IME(S)
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
.5
.2
P DM
.1
.05
.02
t1
t2
1. Duty C yc a l D = t1/t2
2. P e r Unit B a s e R θJ A
=70C /W
3. T J M - T A = P DM Z θjc
4. S ure fa c e M o unte d
0.01
Single Pulse
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (S)
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM4502A_G
Analog Power
AM4502AC
Typical Electrical Characteristics (N-Channel)
30
20
TA = -55oC
25oC
25
ID - Drain Current (A)
15
2.5V
10
5
125oC
20
15
10
5
0
0
1
0
0.25
0.5
0.75
1
1.25
1.5
1.75
1.5
2
2
2.5
3
3.5
VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Output Characteristics
Transfer Characteristics
C - Capacitance (pF)
1000
1.4
rDS(ON), - Normalized On-Resistance
VGS = 3.0V
1.2
4.5V
1
800
600
Ciss
Coss
400
Crss
200
0
0.8
0
5
10
15
20
0
25
6
12
18
24
30
VDS - Drain-to-Source Voltage (V)
ID - Drain Current (A)
On-Resistance vs. Drain Current
Capacitance
rDS(ON) - On-Resistance (Normalized)
10
VGS - Gate-to-Source Voltage (V)
ID, - Drain Current (A)
4.5V
8
6
4
2
1.6
VGS = 4.5V
1.4
1.2
1
0.8
0.6
0
0
3
6
9
12
-50
15
0
25
50
75
100
TJ - Junction Temperature (oC)
Q g - Total Gate Charge (nC )
Gate Charge
On-Resistance vs. Junction Temperature
5
PRELIMINARY
-25
Publication Order Number:
DS-AM4502A_G
125
150
Analog Power
AM4502AC
Typical Electrical Characteristics (N-Channel)
0.07
rDS(ON) - On-Resistance (OHM)
100
IS - Source Current (A)
10
TA = 125oC
1
25oC
0.1
0.01
0.001
0.06
0.05
0.04
0.03
TA = 25oC
0.02
0.01
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
2
1.4
2.5
3
3.5
4
4.5
5
VGS - Gate-to-Source Voltage (V)
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance vs.Gate-to Source Voltage
50
1.8
ID = 250µA
1.6
SINGLE PULSE
RθJA = 250°C/W
TA = 25°C
40
Power (W)
VGS(th) Variance (V)
1.4
1.2
1
0.8
30
20
0.6
10
0.4
0.2
0
0
0.001
-50
-25
0
25
50
75
100
125
0.01
0.1
1
150
10
100
1000
Time (sec)
TJ - Temperature (oC)
Threshold Voltage
Single Pulse Power
D =0.5
RθJA (t) = r(t) +
0.2
0.1
Impedance
Normalized Effective Transient Thermal
1
RθJA
RθJA = 250 °C/W
0.1
0.05
P(pk
0.02
t1
0.01
t2
0.01
TJ - TA = P *
RθJA (t)
Duty Cycle, D = t1
/t
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
Square Wave Pulse Duration (se c)
Normalized Thermal Transient Impedance, Junction-to-Ambient
6
PRELIMINARY
Publication Order Number:
DS-AM4502A_G
Analog Power
AM4502AC
Package Information
SO-8: 8LEAD
H x 45°
7
PRELIMINARY
Publication Order Number:
DS-AM4502A_G
Analog Power
AM4502AC
Ordering information
• AM4502AC-T1-XX
–
–
–
–
–
–
A:
Analog Power
M:
MOSFET
4502A:Part number
C:
Complementary
T1:
Tape & reel
XX: Blank:
Standard
PF:
Leadfree
8
PRELIMINARY
Publication Order Number:
DS-AM4502A_G