Analog Power AM4502AC P & N-Channel 30-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. • • • • PRODUCT SUMMARY VDS (V) rDS(on) m(Ω) 31 @ VGS = 4.5V 30 33 @ VGS = -4.5V -30 Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SOIC-8 saves board space Fast switching speed High performance trench technology ID (A) 6.9 -6.8 1 8 2 7 3 6 4 5 o ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED) Symbol N-Channel P-Channel Units Parameter 30 -30 Drain-Source Voltage VDS V VGS ±12 ±25 Gate-Source Voltage o TA=25 C a Continuous Drain Current o TA=70 C b Pulsed Drain Current a Continuous Source Current (Diode Conduction) 6.9 -8.5 5.4 -6.8 IDM 20 -50 IS 1.3 -2.1 2.1 2.1 1.3 1.3 ID o TA=25 C a Power Dissipation o TA=70 C PD Operating Junction and Storage Temperature Range TJ, Tstg THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient a Steady-State A W o -55 to 150 Symbol t <= 10 sec A RθJA Maximum C Units 62.5 o 110 o C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature 1 PRELIMINARY Publication Order Number: DS-AM4502A_G Analog Power AM4502AC o SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Ch Min Typ Max Unit Static Gate-Threshold Voltage VGS(th) Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Current A ID(on) A Drain-Source On-Resistance rDS(on) Forward TranconductanceA gfs A Pulsed Source Current (Body Diode) VGS = VDS , ID = 250 uA N 0.6 VGS = VDS , ID = -250 uA VGS = -20 V, VDS = 0 V VGS = 12 V, VDS = 0 V VDS = -24 V, VGS = 0 V VDS = 24 V, VGS = 0 V VDS = 5 V, VGS = 4.5 V VDS = -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 6.9 A VGS = -4.5 V, I D = -68 A VDS = 15 V, ID = 6.9 A VDS = -15 V, ID = -8.5 A P P N P N N P N P N P -1.0 V ±100 ±100 -1 1 20 -20 nA uA A 31 33 25 10 S 5 ISM mΩ A Dynamic Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd N-Channel VDS=15V, VGS=4.5V, I D=6.9A P-Channel VDS =-15V, VGS =-4.5V, ID=-8.5A N P N P N 6.0 13 1.0 5.8 1.5 P 12.0 N P N P N P N P 7.4 15 4 16 22.2 62 3.6 46 nC Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time td(on) tr td(off) tf N-Chaneel VDD =15V, VGS =4.5V, I D=1A , RGE N =6Ω, P-Channel VDD=-15V, VGS =-4.5V, ID=-1A RGEN=6Ω nS Notes a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer. 2 PRELIMINARY Publication Order Number: DS-AM4502A_G Analog Power AM4502AC Typical Electrical Characteristics (P-Channel) 0 .0 4 4 .5 V RDS(ON) Resistance (Ω) IDS Drain Current (A) 50 40 5 Vthr ough 10 V 4V 30 20 3 .5 10 3 0 .0 3 2 VGS=4.5V 0 .0 2 4 VGS=10V 0 .0 16 0 .0 0 8 0 0 0 0 .5 1 1.5 2 2 .5 3 3 .5 0 4 20 30 40 50 I D Drain Current (A) VDS (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance with Drain Current 0 .0 6 1.6 1.4 Resistance (Ω ) VGS = 10 V ID = 8 .5A 1.2 1.0 0.8 0 .0 5 0 .0 4 0 .0 3 0 .0 2 0 .0 1 R Normalized R DS(on) 10 0.6 0 -50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10 VGS Gate to Source Voltage (V) TJ J uncatio n Temp erature (C) Figure 3. On-Resistance Variation with Temperature Figure 4. On-Resistance Variation with Gate to Source Voltage 60 VD=VG 100 -55C 25C 40 I Source Current (A) ID Drain Current (A) 50 30 125C 20 10 10 T J = 150 C T J = 25C 1 0 0 1 2 3 4 5 6 0 .1 VGS Ga te to S o urc e Vo lta ge (V) 0 0 .2 0 .4 0 .6 0 .8 1 1 .2 VS D Source to Drain Voltage (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 3 PRELIMINARY Publication Order Number: DS-AM4502A_G Analog Power AM4502AC Typical Electrical Characteristics (P-Channel) 10 2000 8 1500 Capacitance (pF) VGS (V) Ciss VD= 10V ID= 8.5A 6 4 2 1000 0 0 5 10 15 20 25 Coss 500 Crss 0 30 0 5 10 QG, T otal Gate Charge (nC) Figure 7. Gate Charge Characteristics 100 limited RDS (ON) 15 20 VDS (V) Figure 8. Capacitance Characteristics ID 50 45 10 uS 10 40 POWER (W) ID Current (A) 35 100 uS 1m S 1 10m S 1 100m S 0 .1 10S 100S DC 30 25 20 15 10 5 0 0 .0 1 0 .1 1 10 0.001 100 VDS Drain to Source Voltage (V) Figure 9. Maximum Safe Operating Area 0.1 10 1000 T IME(S) Figure 10. Single Pulse Maximum Power Dissipation Normalized Thermal Transient Junction to Ambient 1 0.1 .5 .2 P DM .1 .05 .02 t1 t2 1. Duty C yc a l D = t1/t2 2. P e r Unit B a s e R θJ A =70C /W 3. T J M - T A = P DM Z θjc 4. S ure fa c e M o unte d 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (S) Figure 11. Transient Thermal Response Curve 4 PRELIMINARY Publication Order Number: DS-AM4502A_G Analog Power AM4502AC Typical Electrical Characteristics (N-Channel) 30 20 TA = -55oC 25oC 25 ID - Drain Current (A) 15 2.5V 10 5 125oC 20 15 10 5 0 0 1 0 0.25 0.5 0.75 1 1.25 1.5 1.75 1.5 2 2 2.5 3 3.5 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) Output Characteristics Transfer Characteristics C - Capacitance (pF) 1000 1.4 rDS(ON), - Normalized On-Resistance VGS = 3.0V 1.2 4.5V 1 800 600 Ciss Coss 400 Crss 200 0 0.8 0 5 10 15 20 0 25 6 12 18 24 30 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance rDS(ON) - On-Resistance (Normalized) 10 VGS - Gate-to-Source Voltage (V) ID, - Drain Current (A) 4.5V 8 6 4 2 1.6 VGS = 4.5V 1.4 1.2 1 0.8 0.6 0 0 3 6 9 12 -50 15 0 25 50 75 100 TJ - Junction Temperature (oC) Q g - Total Gate Charge (nC ) Gate Charge On-Resistance vs. Junction Temperature 5 PRELIMINARY -25 Publication Order Number: DS-AM4502A_G 125 150 Analog Power AM4502AC Typical Electrical Characteristics (N-Channel) 0.07 rDS(ON) - On-Resistance (OHM) 100 IS - Source Current (A) 10 TA = 125oC 1 25oC 0.1 0.01 0.001 0.06 0.05 0.04 0.03 TA = 25oC 0.02 0.01 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 2 1.4 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V) VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs.Gate-to Source Voltage 50 1.8 ID = 250µA 1.6 SINGLE PULSE RθJA = 250°C/W TA = 25°C 40 Power (W) VGS(th) Variance (V) 1.4 1.2 1 0.8 30 20 0.6 10 0.4 0.2 0 0 0.001 -50 -25 0 25 50 75 100 125 0.01 0.1 1 150 10 100 1000 Time (sec) TJ - Temperature (oC) Threshold Voltage Single Pulse Power D =0.5 RθJA (t) = r(t) + 0.2 0.1 Impedance Normalized Effective Transient Thermal 1 RθJA RθJA = 250 °C/W 0.1 0.05 P(pk 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Square Wave Pulse Duration (se c) Normalized Thermal Transient Impedance, Junction-to-Ambient 6 PRELIMINARY Publication Order Number: DS-AM4502A_G Analog Power AM4502AC Package Information SO-8: 8LEAD H x 45° 7 PRELIMINARY Publication Order Number: DS-AM4502A_G Analog Power AM4502AC Ordering information • AM4502AC-T1-XX – – – – – – A: Analog Power M: MOSFET 4502A:Part number C: Complementary T1: Tape & reel XX: Blank: Standard PF: Leadfree 8 PRELIMINARY Publication Order Number: DS-AM4502A_G