SFH6755T/56T/57T Vishay Semiconductors High Speed Optocoupler, 10 MBd SOIC-8 Package Features • Choice of CMR performance of 10 kV/µs, Pb-free 5 kV/µs, and 100 v/µs • External creepage distance > 5 mm e3 • High speed: 10 MBd typical RoHS • + 5 V CMOS compatibility COMPLIANT • Guaranteed AC and DC performance over temperature: - 40 to + 100 °C Temp. Range • Pure tin leads • Meets IEC60068-2-42 (SO2) and IEC60068-2-43 (H2S) requirements • Low input current capability: 5 mA • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Agency Approvals • UL1577, File No. E52744 System Code Y • CUL - File No. E52744, equivalent to CSA bulletin 5A • DIN EN 60747-5-2 (VDE0884) • Reinforced insulation rating • VDE available with Option 1 per IEC60950 2.10.5.1 Applications • • • • • • • • • Microprocessor System Interface PLC, ATE input/output isolation Computer peripheral interface Digital Fieldbus Isolation: CC-Link, DeviceNet, Profibus, SDS High speed A/D and D/A conversion AC Plasma Display Panel Level Shifting Multiplexed Data Transmission Digital control power supply Ground loop elimination Document Number 81331 Rev. 1.0, 26-Jun-06 ATTENTION Observe Precaution For Handing Electrostatic Sensitive Devices (ESD) 20050 Dual channel A1 1 8 C1 C2 2 7 3 6 A2 4 5 VCC VO1 VO2 GND SFH6755T/56T/57T 18921-7 Description The SFH675xT-series, is a dual channel 10 MBd optocoupler utilizing a high efficient input LED coupled with an integrated optical photodiode IC detector. The detector has an open drain NMOS-transister output, providing less leakage compared to an open collector Schottky clamped transister output. The internal shield provides a guaranteed common mode transient immunity of 5 kV/µs for the SFH6756T and 10 kV/µs for the SFH6757T. The use of a 0.1 µF bypass capacitor connected between pin 5 and 8 is recommended. Order Information Part SFH6755T Remarks 100 V/µs, Dual channel, SOIC-8 SFH6756T 5 kV/µs, Dual channel, SOIC-8 SFH6757T 10 kV/µs, Dual channel, SOIC-8 Truth Table (Positive Logic) LED ENABLE ON H OUTPUT L OFF H H ON L H OFF L H ON NC L OFF NC H www.vishay.com 1 SFH6755T/56T/57T Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Unit Average forward current Parameter Test condition IF 15 mA Reverse input voltage VR 5 V IFSM 200 mA Symbol Value Unit VCC 7 V Output current IO 50 mA Output voltage VO 7 V Pdiss 60 mW Surge current t = 100 µs Output Parameter Test condition Supply voltage 1 minute max. Output power dissipation per channel Coupler Symbol Value Unit Storage temperature Parameter Test condition Tstg - 55 to + 150 °C Operating temperature Tamb - 40 to + 100 °C °C Lead solder temperature for 10 sec. 260 Solder reflow temperature for 1 minute 260 °C Isolation test voltage t = 1.0 sec. 3000 VRMS VISO Recommended Operating Conditions Parameter Test condition Operating temperature Symbol Min Tamb - 40 Typ. Max Unit 100 °C Supply voltage Vcc 4.5 5.5 V Input current low level IFL 0 250 µA Input current high level IFH 5 15 mA RL 330 4K Ω 5 - Output pull up resistor Fanout www.vishay.com 2 RL = 1 kΩ N Document Number 81331 Rev. 1.0, 26-Jun-06 SFH6755T/56T/57T Vishay Semiconductors Electrical Characteristics Tamb = 25 °C and Vcc = 5.5 V, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Symbol Min Typ. Max Input forward voltage Parameter IF = 10 mA Test condition VF 1.1 1.4 1.7 Unit V Reverse current VR = 5.0 V IR 0.01 10 µA Input capacitance f = 1 MHz, VF = 0 V CI 55 Test condition Symbol pF Output Parameter Typ. Max Unit VE = 0.5 V, IF = 0 mA ICCH 4.1 7.0 mA VE = VCC, IF = 0 mA ICCH 3.3 6.0 mA High level supply current (dual channel) IF = 0 mA ICCH 6.5 12.0 mA Low level supply current (single channel) VE = 0.5 V, IF = 10 mA ICCL 4.0 7.0 mA VE = VCC, IF = 10 mA ICCL 3.3 6.0 mA Low level supply current (dual channel) IF = 10 mA ICCL 6.5 12.0 mA High level output current VE = 2.0 V, VO = 5.5 V, IF = 250 µA IOH 0.002 1 µA Low level output voltage VE = 2.0 V, IF = 5 mA, IOL (sinking) = 13 mA VOL 0.2 0.6 V Input threshold current VE = 2.0 V, VO = 5.5 V, IOL (sinking) = 13 mA ITH 2.4 5.0 mA High level supply current (single channel) Min Switching Characteristics Over Recommended Temperature (Ta = - 40 to + 100 °C), VCC = 5 V, IF = 7.5 mA unless otherwise specified. All Typicals at Ta = 25 °C, VCC = 5 V. Symbol Min Typ. Max Unit Propagation delay time to high output level Parameter RL = 350 Ω, CL = 15 pF tPLH 20 48 100 ns Propagation delay time to low output level RL = 350 Ω, CL = 15 pF tPHL 25 50 100 ns Pulse width distortion RL = 350 Ω, CL = 15 pF | tPHL - tPLH | 2.9 35 ns Propagation delay skew RL = 350 Ω, CL = 15 pF tPSK 8 40 ns Output rise time (10 - 90 %) RL = 350 Ω, CL = 15 pF tr 23 ns Output fall time (90 - 10 %) RL = 350 Ω, CL = 15 pF tf 7 ns Document Number 81331 Rev. 1.0, 26-Jun-06 Test condition www.vishay.com 3 SFH6755T/56T/57T Vishay Semiconductors Pulse Gen. Zo = 50 Ω t f = t r = 5 ns VCC Dual Channel IF VCC 8 1 Input Monitoring Node RM 2 7 3 6 4 5 GND RL 0.1 µF Bypass Output VO Monitoring Node IF = 7.5 mA IF = 3.75 mA 0 mA Input IF VOH 1.5 V VOL Output VO CL= 15 pF t PHL t PLH 20132 Figure 1. Dual Channel Test Circuit for tPLH, tPHL, tr and tf Common Mode Transient Immunity Parameter Test condition |VCM| = 10 V, VCC = 5 V, IF = 0 mA, Common mode transient immunity (high) Symbol Min | CMH | 100 Typ. Max Unit | CMH | 5000 10000 V/µs | CMH| 10000 15000 V/µs | CML| 100 | CML | 5000 10000 V/µs | CML| 10000 15000 V/µs V/µs VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 1) |VCM| = 50 V, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 2) |VCM| = 1 kV, VCC = 5 V, IF = 0 mA, VO(min) = 2 V, RL = 350 Ω, Tamb = 25 °C 3) |VCM| = 10 V, VCC = 5 V, IF = 7.5 mA, Common mode transient immunity (low) V/µs VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 1) |VCM| = 50 V, VCC = 5 V, IF = 7.5 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 2) |VCM| = 1 kV, VCC = 5 V, IF = 7 mA, VO(max) = 0.8 V, RL = 350 Ω, Tamb = 25 °C 3) 1) For SFH6755T For SFH6756T 3) For SFH6757T 2) IF Dual Channel B 1 7 2 VFF 18977-1 6 3 4 +5V VCC 8 A GND RL 0.1 µF Bypass Output VO Monitoring Node VCM 0 V Switch AT A: IF = 0 mA VO 5 V 5 VCM + Pulse Generator Z O = 50 Ω VCM (PEAK) VO 0.5 V CMH VO(min.) Switch AT A: IF = 7.5 mA VO(max.) CML 20133 Figure 2. Dual Channel Test Circuit for Common Mode Transient Immunity www.vishay.com 4 Document Number 81331 Rev. 1.0, 26-Jun-06 SFH6755T/56T/57T Vishay Semiconductors Safety and Insulation Ratings As per IEC60747-5-2, §7.4.3.8.1, this optocoupler is suitable for "safe electrical insulation" only within the safety ratings. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Test condition Symbol Min Typ. Climatic Classification (according to IEC 68 part 1) Max Unit 55/110/21 Comparative Tracking Index CTI 175 399 VIOTM 5000 V VIORM 560 V PSO 350 mW ISI 150 mA TSI 165 Creepage Clearance Insulation thickness, reinforced rated per IEC60950 2.10.5.1 °C 5 mm 4 mm 0.2 mm Typical Characteristics Tamb = 25 °C unless otherwise specified 7 1.7 IF = 50 mA 6 I R - Reverse Current (nA) V F - Forward Voltage (V) 1.6 IF = 20 mA 1.5 1.4 1.3 IF = 10 mA 1.2 IF = 1 mA 1.1 1.0 - 40 - 20 0 20 40 60 80 17610 Tamb - Ambient Temperature (°C) 100 Figure 3. Forward Voltage vs. Ambient Temperature 4 3 2 1 0 - 40 - 20 0 20 40 60 80 17613-1 Tamb - Ambient Temperature (°C) 100 Figure 5. Reverse Current vs. Ambient Temperature 4.0 I CCl - Low Level Supply Current (mA) 1.60 1.55 V F - Forward Voltage (V) 5 1.50 1.45 1.40 1.35 1.30 1.25 1.20 1.15 1.10 0 17611 5 10 15 20 25 30 35 40 45 50 IF - Forward Current (mA) Figure 4. Forward Voltage vs. Forward Current Document Number 81331 Rev. 1.0, 26-Jun-06 17614 3.5 3.0 2.5 VCC = 7 V IF = 10 mA VCC = 5 V IF = 10 mA 2.0 1.5 1.0 0.5 0.0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 6. Low Level Supply Current vs. Ambient Temperature www.vishay.com 5 SFH6755T/56T/57T 0.30 3.5 VCC = 7 V IF = 0.25 mA 3.4 Vol - Low Level Output Voltage (V) I CCh - High Level Supply Current (mA) Vishay Semiconductors 3.3 VCC = 5 V IF = 0.25 mA 3.2 3.1 3.0 2.9 2.8 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 17615 Figure 7. High Level Supply Current vs. Ambient Temperature 0.25 0.15 I L = 10 mA 0.10 0.00 - 40 - 20 0 20 40 60 80 17618 Tamb - Ambient Temperature (°C) R L = 350 2.5 2.4 RL = 4 k 2.3 RL = 1 k 2.1 - 40 - 20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 100 I oh - High Level Output Current (nA) I th - Input Threshold OFF Current (µA) 30 20 10 0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 50 2.5 R L = 350 2.3 2.2 RL = 4 k 2.1 RL = 1 k 2.0 - 40 - 20 0 20 40 60 80 17617 Tamb - Ambient Temperature (°C) 100 Figure 9. Input Threshold OFF Current vs. Ambient Temperature 6 40 Figure 11. Low Level Output Current vs. Ambient Temperature 2.6 www.vishay.com IF = 5 mA IF = 10 mA 50 17619 Figure 8. Input Threshold ON Current vs. Ambient Temperature 2.4 100 Figure 10. Low Level Output Voltage vs. Ambient Temperature I ol - Low Level Output Current (mA) I th - Input Threshold ON Current (µA) 17616 I L = 6 mA 0.05 60 2.7 2.2 I L = 16 mA I L = 13 mA 0.20 2.8 2.6 VCC = 5.5 V IF = 5 mA 17620 45 40 35 30 25 20 15 10 5 0 - 40 - 20 0 20 40 60 80 Tamb - Ambient Temperature (°C) 100 Figure 12. High Level Output Current vs. Ambient Temperature Document Number 81331 Rev. 1.0, 26-Jun-06 SFH6755T/56T/57T Vishay Semiconductors 50 5.5 PWD - Pulse Width Distortion (ns) 5.0 Vo - Output Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 R L = 350 1.5 RL = 1 k 1.0 RL = 4 k 0.5 30 20 R L = 1 kΩ 10 0.0 0 1 2 3 4 5 IF - Forward Input Current (mA) 17621 17624 Figure 13. Output Voltage vs. Forward Input Current 100 80 tPLH, 1 kΩ tPLH, 350 Ω 60 40 tPHL, 350 Ω 20 tPHL, 1 kΩ tPHL, 4 kΩ 0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) PWD - Pulse Width Distortion (ns) t P - Propagation Delay time (ns) 0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) 60 tPLH, 4 kΩ Figure 14. Propagation Delay vs. Ambient Temperature 50 R L = 4 kΩ 40 30 R L = 1 kΩ 20 10 R L = 350 Ω 0 5 17625 7 9 11 13 IF - Forward Current (mA) 15 Figure 17. Pulse Width Distortion vs. Forward Current 300 120 tPLH, 4 kΩ tr, RL = 4 kΩ 100 80 tPLH, 350 Ω t r,f - Rise and Fall Time (ns) t P - Propagation Delay time (ns) R L = 350 Ω Figure 16. Pulse Width Distortion vs. Ambient Temperature 120 17622 R L = 4 kΩ 40 tPLH, 1 kΩ 60 40 tPHL, 350 Ω 20 tPHL, 1 kΩ tPHL, 4 kΩ 250 200 150 100 0 5 17623 7 9 11 13 IF - Forward Current (mA) 15 Figure 15. Propagation Delay vs. Forward Current Document Number 81331 Rev. 1.0, 26-Jun-06 17626 tr, RL = 1 kΩ 50 tf, RL = 350 Ω tf, RL = 1 kΩ tf, RL = 4 kΩ tr, RL = 350 Ω 0 - 40 - 20 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 18. Rise and Fall Time vs. Ambient Temperature www.vishay.com 7 SFH6755T/56T/57T Vishay Semiconductors 300 t r,f - Rise and Fall Time (ns) tr, RL = 4 kΩ 250 200 150 100 tr, RL = 1 kΩ 50 tf, RL = 350 Ω tf, RL = 1 kΩ tf, RL = 4 kΩ tr, RL = 350 Ω 0 5 7 9 11 13 IF - Forward Current (mA) 17627 15 Figure 19. Rise and Fall Time vs. Forward Current Package Dimensions in Inches (mm) Dual Channel SOIC-8 0.120 ± 0.002 (3.05 ± 0.05) R 0.010 (0.13) 0.050 (1.27) 0.014 (0.36) C L 0.154 ± 0.002 (3.91 ± 0.05) 0.240 (6.10) 0.036 (0.91) 0.045 (1.14) 0.170 (4.32) 0.260 (6.6) 0.016 (0.41) Pin One I.D. 0.230 ± 0.002 (5.84 ± 0.05) 7° 0.015 ± 0.002 (0.38 ± 0.05) 40° 0.0585 ± 0.002 (1.49 ± 0.05) ISO Method A 0.004 (0.10) 0.008 (0.20) 0.008 (0.20) 0.050 (1.27) Typ. 0.040 (1.02) i178020 0.020 ± 0.004 (0.51 ± 0.10) 2 Plcs. 5° Max. R0.010 (0.25) Max. 0.125 ± 0.002 (3.18 ± 0.05) Lead coplanarity ± 0.001 Max. ESD Caution This is an ESD (electro static discharge) sensitive device. Electrostatic charges accumulate on the human body and test equipment and can discharge without detection. Therefore, proper ESD precautions are recommended to avoid performance degradation or loss of functionality. ESD withstand voltage of this device is up to 1500 V acc. to JESD22-A114-B. www.vishay.com 8 Document Number 81331 Rev. 1.0, 26-Jun-06 SFH6755T/56T/57T Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Document Number 81331 Rev. 1.0, 26-Jun-06 www.vishay.com 9 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1