link

AM40P04-20D
Analog Power
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
rDS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
•
•
•
PRODUCT SUMMARY
VDS (V)
rDS(on) m(Ω)
30 @ VGS = -10V
-40
40 @ VGS = -4.5V
ID (A)
36
29
Low rDS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
DPAK saves board space
Fast switching speed
High performance trench technology
o
ABSOLUTE MAXIMUM RATINGS (TA = 25 C UNLESS OTHERWISE NOTED)
Symbol Maximum Units
Parameter
VDS
Drain-Source Voltage
-40
V
±20
Gate-Source Voltage
VGS
a
o
TA=25 C ID
Continuous Drain Current
b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
a
a
IDM
±40
IS
-30
o
TA=25 C P D
Power Dissipation
Operating Junction and Storage Temperature Range
a
RθJA
RθJC
A
A
W
50
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient
Maximum Junction-to-Case
36
o
C
-55 to 175
Maximum
Units
50
o
3.0
o
C/W
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
1
PRELIMINARY
Publication Order Number:
DS-AM40P04-20_C
AM40P04-20D
Analog Power
o
SPECIFICATIONS (TA = 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
VGS(th)
IGSS
VDS = VGS, ID = -250 uA
Min
Limits
Unit
Typ Max
Static
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
IDSS
On-State Drain CurrentA
ID(on)
Drain-Source On-ResistanceA
rDS(on)
Forward TranconductanceA
Diode Forward Voltage
Dynamic
gfs
VSD
-1
VDS = 0 V, VGS = ±25 V
±100
nA
VDS = -24 V, VGS = 0 V
-1
-5
uA
VDS = -24 V, VGS = 0 V, TJ = 55oC
VDS = -5 V, VGS = -10 V
VGS = -10 V, ID = -36 A
VGS = -4.5 V, ID = -29 A
-41
A
30
40
VDS = -15 V, ID = -36 A
IS = -41 A, VGS = 0 V
31
-0.7
mΩ
S
V
b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Qg
Qgs
Qgd
Ciss
Coss
Crss
VDS = -15 V, VGS = -4.5 V,
ID = -36 A
VDS = -15 V, VGS = 0 V, f = 1MHz
13.9
5.2
5.8
1583
278
183
nC
pF
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall-Time
td(on)
tr
td(off)
tf
VDD = -15 V, RL = 15 Ω , ID = -41 A,
VGEN = -10 V, RG = 6Ω
15
12
62
46
Notes
a.
Pulse test: PW <= 300us duty cycle <= 2%.
b.
Guaranteed by design, not subject to production testing.
Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation
or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or
use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and
actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by
customer’s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed,
intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or
sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur.
Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its
officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.
2
PRELIMINARY
Publication Order Number:
DS-AM40P04-20_C
nS
AM40P04-20D
Analog Power
Typical Electrical Characteristics
60
60
4.5V
6V through 10V
50
4V
ID Drain Current (A)
IDS Drain Current (A)
50
40
40
25C
30
3.5V
30
20
20
3V
10
10
0
0
0
0.5
1
1.5
2
2 .5
3
3.5
0
4
1
2
3
4
5
6
VGS Gate to Source Voltage (V)
VDS(V)
Output Characteristics
Transfer Characteristics
2400
2200
4.5V
2000
0.08
1800
0.07
Capacitance (pF)
RDS(ON) resistance ( Ω)
0.1
0.09
6V
0.06
0.05
10V
0.04
0.03
Ciss
1600
1400
1200
1000
Coss
800
600
400
0.02
Crs
200
0.01
0
0
0
0
10
20
30
40
50
5
10
15
20
60
VDS (V)
ID Drain Current (A)
On Resistance Vs Vgs Voltage
Capacitance
1.6
10
VD= 10V
ID= 10A
6
4
2
1.4
1.3
(Normalized)
rDS(ON) - On-Resistance (Ohm)
8
VGS (V)
VGS = - 10V
1.5
1.2
1.1
1
0.9
0.8
0.7
0
0.6
0
5
10
15
20
25
30
-50
QG, Total Gate Charge (nC)
0
25
50
75
100
125
o
TJ - Junction Temperature ( C)
Gate Charge
On-Resistance vs. Junction Temperature
3
PRELIMINARY
-25
Publication Order Number:
DS-AM40P04-20_C
150
AM40P04-20D
Analog Power
Typical Electrical Characteristics
0.1
RDS(ON) Resistance (Ω)
0.09
100
IS - Source Current (A)
10
T A = 125oC
1
o
25 C
0.1
0.01
0.001
Id=10A
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
0
2
4
6
8
10
V SD - Source-to-Drain Voltage (V)
VGS Gate to Source Voltage(V)
Source-Drain Diode Forward Voltage
On-Resistance with Gate to Source Voltage
P(pk), PEAK TRANSIENT POWER (W)
50
2
ID = -250µA
1.9
V GS(th) Variance (V)
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
-50
-25
0
25
50
75
100
125
SINGLE PULSE
RqJA = 125C/W
TA = 25C
40
30
20
10
0
0.001
150
0.01
0.1
1
10
100
1000
o
TJ - Temperature ( C)
t1, TIME (sec)
Threshold Voltage
Figure 10. Single Pulse Maximum Power Dissipation
Normalized Thermal Transient Junction to Ambient
1
0.1
D =0.5
0.2
Rq JA(t) = r(t) + Rq JA
Rq JA = 1 2 5 o C/ W
0.1
0.05
P ( pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * Rq J A(t )
Dut y Cycle, D = t1 / t2
S INGLE P ULS E
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , TIM E (sec)
Figure 11. Transient Thermal Response Curve
4
PRELIMINARY
Publication Order Number:
DS-AM40P04-20_C
AM40P04-20D
Analog Power
Package Information
5
PRELIMINARY
Publication Order Number:
DS-AM40P04-20_C