Si9933BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.06 at VGS = - 4.5 V - 4.7 0.10 at VGS = - 2.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si9933BDY-T1-E3 (Lead (Pb)-free) Si9933BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa - 3.6 - 3.8 - 2.8 IDM Pulsed Drain Current - 20 IS TA = 25 °C TA = 70 °C PD - 1.7 - 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range V - 4.7 ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t ≤ 10 s Steady State Steady State Typical Maximum 55 62.5 90 110 33 40 RthJA RthJF Unit °C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. For SPICE model information via the Worldwide Web: www.vishay.com/www/product/spice.htm Document Number: 72748 S09-1925-Rev. C, 28-Sep-09 www.vishay.com 1 Si9933BDY Vishay Siliconix SPECIFICATIONS TA = 25 °C unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 µA Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 12 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 55 °C -5 VDS ≤ - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea - 1.4 ± 100 µA - 20 A VGS = - 4.5 V, ID = - 4.7 A 0.048 0.06 VGS = - 2.5 V, ID = - 1 A 0.08 0.10 gfs VDS = - 10 V, ID = - 4.7 A 11 VSD IS = - 1.7 A, VGS = 0 V - 0.75 - 1.2 6 9 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg VDS = - 10 V, VGS = - 4.5 V, ID = - 4.7 A 1.9 f = 1 MHz 22 tr td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr Ω 9.5 td(on) Turn-On Delay Time Rise Time nC 1.4 35 VDD = - 10 V, RL = 10 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω 35 55 45 70 25 40 IF = - 1.7 A, dI/dt = 100 A/µs 25 50 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 20 20 VGS = 5 V thru 3.5 V TC = - 55 °C 3V 25 °C 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 2.5 V 8 2V 4 125 °C 12 8 4 1.5 V 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72748 S09-1925-Rev. C, 28-Sep-09 Si9933BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 0.16 800 C - Capacitance (pF) 0.20 0.12 R DS(on) - VGS = 2.5 V 0.08 VGS = 4.5 V Ciss 600 400 Coss 200 0.04 Crss 0 0.00 0 4 8 12 16 0 20 4 8 20 Capacitance 1.6 5 VGS = 10 V ID = 4.7 A VDS = 10 V ID = 4.7 A 1.4 4 R DS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 16 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current 3 2 1.2 1.0 0.8 1 0.6 - 50 0 0 1 2 3 4 5 6 7 8 0 25 50 75 100 125 Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 150 R DS(on) - On-Resistance (Ω) 0.20 TJ = 150 °C 10 TJ = 25 °C 1 0.0 - 25 TJ - Junction Temperature (°C) 30 I S - Source Current (A) 12 0.16 ID = 1 A 0.12 ID = 4.7 A 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72748 S09-1925-Rev. C, 28-Sep-09 1.4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si9933BDY Vishay Siliconix 0.6 50 0.4 40 ID = 250 µA Power (W) VGS(th) Variance (V) TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.2 0.0 30 20 - 0.2 10 - 0.4 - 50 0 - 25 0 25 50 75 100 125 10 -2 150 10 -1 1 TJ - Temperature (°C) 10 100 600 Time (s) Single Pulse Power Threshold Voltage 100 IDM Limited Limited by RDS(on)* I D - Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 P(t) = 10 DC TA = 25 °C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 * VGS 10 100 VDS - Drain-to-Source Voltage (V) minimum VGS at which RDS(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = R thJA = 90 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72748 S09-1925-Rev. C, 28-Sep-09 Si9933BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72748. Document Number: 72748 S09-1925-Rev. C, 28-Sep-09 www.vishay.com 5 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1