Si9933BDY Vishay Siliconix New Product Dual P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.06 @ VGS = −4.5 V −4.7 0.10 @ VGS = −2.5 V −3.7 S1 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S2 G1 G2 Top View Ordering Information: Si9933BDY—E3 (Lead Free) Si9933BDY-T1—E3 (Lead Free with Tape and Reel) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS −20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C TA = 70_C Pulsed Drain Current ID continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa TA = 70_C Operating Junction and Storage Temperature Range PD V −4.7 −3.6 −3.8 −2.8 IDM −20 −1.7 −0.9 2.0 1.1 1.3 0.7 TJ, Tstg Unit −55 to 150 A W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Symbol t v 10 sec Steady State Steady State RthJA RthJF Typical Maximum 55 62.5 90 110 33 40 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 72748 S-40237—Rev. A, 16-Feb-04 www.vishay.com 1 Si9933BDY Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = −250 mA −0.6 Typ Max Unit −1.4 V "100 nA Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain Source On-State Drain-Source On State Resistancea VDS = 0 V, VGS = "12 V Diode Forward Voltagea −1 VDS = −20 V, VGS = 0 V, TJ = 55_C −5 VDS v −5 V, VGS = −4.5 V rDS(on) DS( ) Forward Transconductancea VDS = −20 V, VGS = 0 V mA −20 A VGS = −4.5 V, ID = −4.7 A 0.048 0.06 VGS = −2.5 V, ID = −1 A 0.08 0.10 gfs VDS = −10 V, ID = −4.7 A 11 VSD IS = −1.7 A, VGS = 0 V −0.75 −1.2 6 9 VDS = −10 V, VGS = −4.5 V, ID = −4.7 A 1.4 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Rg Turn-On Delay Time Rise Time Turn-Off Delay Time nC 1.9 f = 1 MHz 9.5 W td(on) 22 35 tr 35 55 45 70 25 40 25 50 VDD = −10 V, RL = 10 W ID ^ −1 A, VGEN = −4.5 V, Rg = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr IF = −1.7 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 3.5 V 25_C 16 I D − Drain Current (A) 16 I D − Drain Current (A) TC = −55_C 3V 12 2.5 V 8 2V 4 125_C 12 8 4 1.5 V 0 0 1 2 3 4 VDS − Drain-to-Source Voltage (V) www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VGS − Gate-to-Source Voltage (V) Document Number: 72748 S-40237—Rev. A, 16-Feb-04 Si9933BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 1000 0.16 800 C − Capacitance (pF) r DS(on) − On-Resistance ( W ) On-Resistance vs. Drain Current 0.20 0.12 VGS = 2.5 V 0.08 VGS = 4.5 V 400 0.04 200 0.00 0 0 4 8 12 16 Ciss 600 20 Coss Crss 0 4 ID − Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 4.7 A VGS = 10 V ID = 4.7 A 4 1.4 rDS(on) − On-Resiistance (Normalized) V GS − Gate-to-Source Voltage (V) 12 VDS − Drain-to-Source Voltage (V) 5 3 2 1 1.2 1.0 0.8 0 0 1 2 3 4 5 6 7 0.6 −50 8 −25 0 Qg − Total Gate Charge (nC) Source-Drain Diode Forward Voltage 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 0.20 r DS(on) − On-Resistance ( W ) TJ = 150_C 10 TJ = 25_C 1 0.0 25 TJ − Junction Temperature (_C) 30 I S − Source Current (A) 8 0.16 ID = 1 A 0.12 ID = 4.7 A 0.08 0.04 0.00 0.2 0.4 0.6 0.8 1.0 VSD − Source-to-Drain Voltage (V) Document Number: 72748 S-40237—Rev. A, 16-Feb-04 1.2 1.4 0 1 2 3 4 5 VGS − Gate-to-Source Voltage (V) www.vishay.com 3 Si9933BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Single Pulse Power 50 0.4 40 ID = 250 mA 0.2 30 Power (W) V GS(th) Variance (V) Threshold Voltage 0.6 0.0 20 −0.2 10 −0.4 −50 −25 0 25 50 75 100 125 0 10−2 150 10−1 TJ − Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D − Drain Current (A) 10 P(t) = 0.001 1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 0.1 P(t) = 1 P(t) = 10 dc TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS − Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 90_C/W 3. TJM − TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10−4 www.vishay.com 4 10−3 10−2 10−1 1 Square Wave Pulse Duration (sec) 10 100 600 Document Number: 72748 S-40237—Rev. A, 16-Feb-04 Si9933BDY Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 Document Number: 72748 S-40237—Rev. A, 16-Feb-04 10−3 10−2 10−1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. 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