SS2H9, SS2H10 Datasheet

SS2H9, SS2H10
www.vishay.com
Vishay General Semiconductor
High Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
• Low profile package
• Guardring for overvoltage protection
• Ideal for automated placement
• Low power losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
DO-214AA (SMB)
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PRIMARY CHARACTERISTICS
IF(AV)
2.0 A
VRRM
90 V, 100 V
IFSM
75 A
VF
0.65 V
IR
10 μA
TJ max.
175 °C
Package
DO-214AA (SMB)
Diode variations
Single
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AA (SMB)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant and AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 2 whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
SS2H9
SS2H10
MS9
MS10
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
100
Maximum average forward rectified current at: TL = 130 °C
IF(AV)
2.0
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
75
A
V
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
IRRM
1.0
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/μs
TJ, TSTG
-65 to +175
°C
Operating junction and storage temperature range
Revision: 23-Dec-14
Document Number: 88750
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS2H9, SS2H10
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage (1)
IF = 2.0 A
SYMBOL
TJ = 25 °C
UNIT
V
0.65
IR
TJ = 125 °C
SS2H10
0.79
VF
TJ = 125 °C
TJ = 25 °C
Maximum reverse current at rated VR (2)
SS2H9
10
μA
4
mA
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width  40 ms
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Maximum thermal resistance junction to lead TL = 25 °C (1)
SS2H9
SS2H10
RJA
80
RJL
25
UNIT
°C/W
Note
(1) Units mounted on PCB with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas
ORDERING INFORMATION (Example)
PREFERRED P/N
SS2H9-E3/52T
SS2H9-E3/5BT
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.096
52T
750
7" diameter plastic tape and reel
0.096
5BT
3200
13" diameter plastic tape and reel
(1)
0.096
52T
750
7" diameter plastic tape and reel
SS2H9HE3/5BT (1)
0.096
5BT
3200
13" diameter plastic tape and reel
SS2H9HE3_A/H (1)
0.096
H
750
7" diameter plastic tape and reel
SS2H9HE3_A/I (1)
0.096
I
3200
13" diameter plastic tape and reel
SS2H9HE3/52T
Note
AEC-Q101 qualified
(1)
RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted)
100
Average Forward Current (A)
Average Forward Current (A)
2.5
2.0
1.5
1.0
0.5
75
50
25
0
0
25
50
75
100
125
150
175
1
10
100
TL - Lead Temperature (°C)
Number of Cycles at 60 Hz
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Max Non-Repetitive Peak Forward Surge Current
Revision: 23-Dec-14
Document Number: 88750
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SS2H9, SS2H10
www.vishay.com
Vishay General Semiconductor
1000
TJ = 175 °C
TJ = 150 °C
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
10
1
TJ = 125 °C
0.1
TJ = 25 °C
0.01
10
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Fig. 3 - Typical Instanteous Forward Characteristics
Fig. 5 - Typical Junction Capacitance
10 000
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
100
TJ = 175 °C
1000
TJ = 150 °C
TJ = 125 °C
100
10
1
0.1
TJ = 25 °C
0.01
1
0.01
0.001
10
20
30
40
50
60
70
80
90
10
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Fig. 4 - Typical Reverse Characteristics
Fig. 6 - Typical Transient Thermal Impedance Per Leg
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AA (SMB)
Cathode Band
Mounting Pad Layout
0.085 (2.159) MAX.
0.155 (3.94)
0.130 (3.30)
0.086 (2.20)
0.077 (1.95)
0.086 (2.18) MIN.
0.180 (4.57)
0.160 (4.06)
0.060 (1.52) MIN.
0.012 (0.305)
0.006 (0.152)
0.220 (5.59) REF.
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.220 (5.59)
0.205 (5.21)
Revision: 23-Dec-14
Document Number: 88750
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 02-Oct-12
1
Document Number: 91000