Application Note Seite 1 Datum: 2005-04-27 AN Nummer: AN2005-02 Characteristic differences between 1200V IGBT3 modules of the E3 and T3 series 1. Chip Technology IGBT 1200V The product range of the existing 1200V IGBT modules of the third generation (IGBT3) – E3 was expanded by a further optimization. The result was the T3 IGBT. The Collector-Emitter saturation voltage (VCEsat) and the turn-off losses (Eoff) were reduced with this T3 IGBT. (Further information on the IGBT3 can be found in the application note AN2003-03) Figure 1.1. Total switching losses vs. Saturation voltage of all 1200V IGBT generations. This T3 device was optimized at a higher switching frequency. The reduced losses in combination with the higher current density have allowed for the expansion of the product range of the IGBT3 modules. eupec GmbH Max-Planck-Straße D-59581 Warstein Tel. +49 (0) 29 02 7 64-0 Fax + 49 (0) 29 02 7 64-12 56 [email protected] www.eupec.com Author: Wilhem Rusche Application Note Seite 2 Datum: 2005-04-27 AN Nummer: AN2005-02 2. Output Characteristic Figure 2.1 shows the typical output characteristic of the T3 and the E3 IGBT. Figure 2.1 Output Characteristic (typical) The (typical) Collector-Emitter saturation voltage (VCEsat) of both IGBT3 generations are shown with the value of VCEsat=1,7V. There are no differences between the E3 & T3 at a junction temperature of Tvj=25°C. The output characteristic diagram of the T3 IGBT at the max. junction temperature Tvjop=125°C and at nominal rated current (ICnom) shows a reduction of the Collector-Emitter saturation voltage (VCEsat) by approx. 100mV compared with the E3. eupec GmbH Max-Planck-Straße D-59581 Warstein Tel. +49 (0) 29 02 7 64-0 Fax + 49 (0) 29 02 7 64-12 56 [email protected] www.eupec.com Author: Wilhem Rusche Application Note Seite 3 Datum: 2005-04-27 AN Nummer: AN2005-02 3. Switching Behavior 3.1. Turn-On The typical turn-on switching behavior of both IGBT3 generations are given in the figures 3.1.1. and 3.1.2. VGE IC IGBT3 - T3 FS75R12KT3 Tvjop = 125°C IC = 75A VDC = 600V Rg=Rg nom= 4,7Ω Eon = 6,2mJ di/dt = 3,6kA/µs dv/dt = -2,9kV/µs VCE Figure 3.1.1. turn-on (typical) FS75R12KT3 VGE IC IGBT3 - E3 FS75R12KE3 Tvjop = 125°C IC = 75A VDC = 600V Rg=Rg nom= 4,7Ω Eon = 6,3mJ di/dt = 2,4kA/µs dv/dt = -2,8kV/µs VCE Figure 3.1.2. turn-on (typical) FS75R12KE3 The turn-on switching behavior of both chip types is comparable and shows almost no difference. eupec GmbH Max-Planck-Straße D-59581 Warstein Tel. +49 (0) 29 02 7 64-0 Fax + 49 (0) 29 02 7 64-12 56 [email protected] www.eupec.com Author: Wilhem Rusche Application Note Seite 4 Datum: 2005-04-27 AN Nummer: AN2005-02 3.2. Turn-On Losses The typical turn-on losses of the IGBT Module with E3 and T3 IGBTs are given by the example of the IGBT Module FS75R12KE3 and FS75R12KT3 as a function of the collector current. Eon = f (IC) in figure 3.2.1.. Eon=f (IC) @ ( FS75R12KE3 / FS75R12KT3 ) 18 VCE = 600V Tvjop = 125°C RG = RGnom VGE = ± 15V 16 14 Eon [mJ] 12 10 8 6 4 FS75R12KE3_Eon 2 FS75R12KT3_Eon 0 0 40 80 IC [A] 120 160 Figure 3.2.1. turn-on losses (typical) E3 vs. T3 The typical turn-on losses of the IGBT modules with E3 and T3 IGBT show almost no differences. eupec GmbH Max-Planck-Straße D-59581 Warstein Tel. +49 (0) 29 02 7 64-0 Fax + 49 (0) 29 02 7 64-12 56 [email protected] www.eupec.com Author: Wilhem Rusche Application Note Seite 5 Datum: 2005-04-27 AN Nummer: AN2005-02 3.3. Turn-off behavior The typical turn-off behavior of both IGBT3 generations is given in the figures 3.3.1. and 3.3.2.. VGE IC IGBT3 - T3 FS75R12KT3 Tvjop = 125°C IC = 75A VDC = 600V Rg=Rg nom= 4,7Ω Eoff = 8mJ di/dt = -0,45kA/µs dv/dt = 3,2kV/µs VCE Figure 3.3.1. turn-off (typical) FS75R12KT3 VGE IC IGBT3 - E3 FS75R12KE3 Tvjop = 125°C IC = 75A VDC = 600V Rg=Rg nom= 4,7Ω Eoff = 11mJ di/dt = -0,39kA/µs dv/dt = 3,1kV/µs VCE Figure 3.3.2. turn-off (typical) FS75R12KE3 The turn-off process of both chip generation shows for the IGBT3-E3 chip a softer turn-off behavior. eupec GmbH Max-Planck-Straße D-59581 Warstein Tel. +49 (0) 29 02 7 64-0 Fax + 49 (0) 29 02 7 64-12 56 [email protected] www.eupec.com Author: Wilhem Rusche Application Note Seite 6 Datum: 2005-04-27 AN Nummer: AN2005-02 3.4. Total Turn-Off Losses The total turn-off losses of the T3 IGBT could be reduced in comparison with the E3 IGBT. In figure 3.4.1 the typical characteristic of the total turn-off losses as a function of the collector current is given for the IGBT Modules FS75R12KE3 and FS75R12KT3. Eoff = f(IC) @ ( FS75R12KE3 / FS75R12KT3 ) 18 VCE=600V Tvjop=125°C RG=RGnom VGE=±15V 16 14 Eoff [mJ] 12 10 8 6 4 FS75R12KE3_Eoff 2 FS75R12KT3_Eoff 0 0 40 80 120 160 IC [A] Bild 3.4.1 Abschaltverluste (typisch) E3 vs. T3 The turn-off losses of the T3 IGBT module (FS75R12KT3 Eoff=8,1mJ) under nominal conditions are approx. 17% lower in comparison with the E3 IGBT module (FS75R12KE3 Eoff=9,5mJ). To optimally use the advantages of the reduced losses of the IGBT3 - T3 it is required to reduce the stray inductances of the application, because the IGBT3-T3 exhibits a reduced softness during turning off. The current steepness during the turn-off process produces in combination with the parasitic inductance of the DC link and module inductance, an over voltage at the IGBT: ∆ V = − L * di σ dt Naturally over voltages that occur at the IGBT during the turn-off process must always be limited to the maximum reverse voltage of the module (VCES). eupec GmbH Max-Planck-Straße D-59581 Warstein Tel. +49 (0) 29 02 7 64-0 Fax + 49 (0) 29 02 7 64-12 56 [email protected] www.eupec.com Author: Wilhem Rusche