SGP02N120 Preliminary SGB02N120, SGD02N120 Fast S-IGBT in NPT-technology C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability Type VCE IC Eoff Tj 1200V 2A 0.11mJ 150°C G E Package Ordering Code TO-220AB Q67040-S4270 SGB02N120 TO-263AB(D2PAK) Q67040-S4271 SGD02N120 TO-252AA(DPAK) Q67040-S4269 SGI02N120 TO-262 Q67040-S4291 SGP02N120 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 6.2 TC = 100°C 2.8 Pulsed collector current, tp limited by Tjmax ICpul s 9.6 Turn off safe operating area - 9.6 Gate-emitter voltage VGE ±20 V Avalanche energy, single pulse EAS 10 mJ tSC 10 µs Ptot 62 W -55...+150 °C VCE ≤ 1200V, Tj ≤ 150°C IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C 1) Short circuit withstand time VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 1) 260 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Mar-00 Preliminary SGP02N120 SGB02N120, SGD02N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit 2.0 K/W Characteristic RthJC IGBT thermal resistance, junction – case Thermal resistance, RthJA TO-220AB 62 RthJA TO-263AB(D2PAK) 40 junction – ambient 1) SMD version, device on PCB Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - 2.5 3.1 3.6 T j =1 5 0° C - 3.7 4.3 3 4 5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 1 00 µA Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 2 A T j =2 5 °C Gate-emitter threshold voltage VGE(th) I C = 10 0 µA , V C E = V G E Zero gate voltage collector current ICES V C E = 12 0 0V , V G E = 0V µA T j =2 5 °C - - 25 T j =1 5 0° C - - 100 - - 100 nA 1.5 - S pF Gate-emitter leakage current IGES V C E = 12 0 0V , V G E = 0V Transconductance gfs V C E = 20 V , I C = 2 A Input capacitance Ciss V C E = 25 V , - 205 250 Output capacitance Coss V G E = 0V , - 28 34 Reverse transfer capacitance Crss f= 1 MH z - 17 21 Gate charge QGate V C C = 96 0 V, I C =2 A - 11 - nC Dynamic Characteristic V G E = 15 V Internal emitter inductance LE T O - 22 0A B - 7 - nH IC(SC) V G E = 15 V ,t S C ≤ 10 µs 10 0 V≤ V C C ≤ 12 0 0 V, T j ≤ 15 0° C - 24 - A measured 5mm (0.197 in.) from case 2) Short circuit collector current 1) 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for collector connection. PCB is vertical without blown air. 2) Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Mar-00 Preliminary SGP02N120 SGB02N120, SGD02N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) T j =2 5 °C , - 23 30 Rise time tr V C C = 80 0 V, I C = 2 A, - 16 21 Turn-off delay time td(off) V G E = 15 V /0 V , - 260 340 Fall time tf R G = 91 Ω, - 61 80 Turn-on energy Eon - 0.16 0.21 Turn-off energy Eoff Energy losses include “tail” and diode reverse recovery. - 0.06 0.08 Total switching energy Ets - 0.22 0.29 ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. max. Unit IGBT Characteristic Turn-on delay time td(on) T j =1 5 0° C - 26 31 Rise time tr V C C = 80 0 V, - 14 17 Turn-off delay time td(off) I C = 2 A, - 290 350 Fall time tf V G E = 15 V /0 V , - 85 102 Turn-on energy Eon R G = 91 Ω - 0.27 0.33 Turn-off energy Eoff - 0.11 0.15 Total switching energy Ets Energy losses include “tail” and diode reverse recovery. - 0.38 0.48 Power Semiconductors 3 ns mJ Mar-00 SGP02N120 Preliminary SGB02N120, SGD02N120 Ic 12A 10A tp=10µs IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 10A 8A TC=80°C 6A TC=110°C 4A 2A 0A 10Hz 50µs 1A 150µs 500µs 0.1A 20ms Ic 100Hz DC 1kHz 10kHz 0.01A 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 91Ω) 1V 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 7A 60W 6A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 50W 40W 30W 20W 10W 0W 25°C 5A 4A 3A 2A 1A 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Mar-00 SGP02N120 Preliminary 7A 7A 6A 6A 5A 4A 3A VGE=17V 15V 13V 11V 9V 7V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT SGB02N120, SGD02N120 2A 1A 0A 0V 1V 2V 3V 4V 5V 6V 5A Tj=+150°C Tj=+25°C Tj=-40°C 2A 1A 5V 7V 9V 11V VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE IC, COLLECTOR CURRENT 2A VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Power Semiconductors 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) 6A 0A 3V 3A 0A 0V 7V 7A 3A 4A VGE=17V 15V 13V 11V 9V 7V 1A VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 4A 5A 6V 5V IC=4A 4V IC=2A 3V IC=1A 2V 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Mar-00 SGP02N120 Preliminary SGB02N120, SGD02N120 td(off) tf 100ns t, SWITCHING TIMES t, SWITCHING TIMES td(off) td(on) tf 100ns td(on) tr tr 10ns 10ns 0A 2A 4A 6A 8A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1Ω) 0Ω 50Ω 100Ω 150Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A) VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 6V t, SWITCHING TIMES td(off) 100ns tf td(on) tr 10ns -50°C 0°C 50°C 100°C max. 4V typ. 3V min. 2V 1V 0V -50°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1Ω) Power Semiconductors 5V 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Mar-00 SGP02N120 Preliminary SGB02N120, SGD02N120 0.5mJ 2.0mJ *) Eon and Ets include losses due to diode recovery. Ets* 1.5mJ Eon* 1.0mJ 0.5mJ Eoff E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. 0.0mJ 0.3mJ 2A 4A 6A 0.1mJ 8A IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 9 1Ω) Eon* 0.2mJ 0.0mJ 0A Ets* 0.4mJ Eoff 0Ω 50Ω 100Ω 150Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 2A) E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. Ets* 0.3mJ Eon* 0.2mJ 0.1mJ 0.0mJ -50°C Eoff ZthJC, TRANSIENT THERMAL IMPEDANCE 0.4mJ D=0.5 0 10 K/W 0.2 0.1 0.05 R,(K/W) 0.66735 0.70472 0.62778 -1 10 K/W 0.02 0.01 R1 50°C 100°C 150°C -2 1µs 10µs 100µs C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 1ms 10ms 100ms 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 2A, RG = 9 1Ω) Power Semiconductors R2 10 K/W single pulse 0°C τ, (s)= 0.04691 0.00388 0.00041 Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Mar-00 SGP02N120 Preliminary SGB02N120, SGD02N120 20V C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 15V 10V UCE=960V 100pF Coss 5V Crss 0V 0nC 5nC 10nC 10pF 0V 15n QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 2A) 20V 30V 40A IC(sc), SHORT CIRCUIT COLLECTOR CURRENT tsc, SHORT CIRCUIT WITHSTAND TIME 30µs 25µs 20µs 15µs 10µs 5µs 0µs 10V 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 11V 12V 13V 14V 20A 10A 0A 10V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) Power Semiconductors 30A 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V ≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C) 8 Mar-00 SGP02N120 Preliminary SGB02N120, SGD02N120 dimensions TO-220AB symbol [mm] min [inch] max max A 9.70 10.30 0.3819 0.4055 B 14.88 15.95 0.5858 0.6280 C 0.65 0.86 0.0256 0.0339 D 3.55 3.89 0.1398 0.1531 E 2.60 3.00 0.1024 0.1181 F 6.00 6.80 0.2362 0.2677 G 13.00 14.00 0.5118 0.5512 H 4.35 4.75 0.1713 0.1870 K 0.38 0.65 0.0150 0.0256 L 0.95 1.32 0.0374 0.0520 M 2.54 typ. 0.1 typ. N 4.30 4.50 0.1693 0.1772 P 1.17 1.40 0.0461 0.0551 T 2.30 2.72 0.0906 0.1071 dimensions TO-263AB (D2Pak) symbol [inch] max min max A 9.80 10.20 0.3858 0.4016 B 0.70 1.30 0.0276 0.0512 C 1.00 1.60 0.0394 0.0630 D 1.03 1.07 0.0406 0.0421 F G 2.54 typ. 0.65 0.85 5.08 typ. 0.1 typ. 0.0256 0.0335 0.2 typ. H 4.30 4.50 0.1693 0.1772 K 1.17 1.37 0.0461 0.0539 L 9.05 9.45 0.3563 0.3720 M 2.30 2.50 0.0906 0.0984 N 15 typ. 0.5906 typ. P 0.00 0.20 0.0000 0.0079 Q 4.20 5.20 0.1654 0.2047 R 9 [mm] min E Power Semiconductors min 8° max 8° max S 2.40 3.00 0.0945 0.1181 T 0.40 0.60 0.0157 0.0236 U 10.80 0.4252 V 1.15 0.0453 W 6.23 0.2453 X 4.60 0.1811 Y 9.40 0.3701 Z 16.15 0.6358 Mar-00 SGP02N120 Preliminary SGB02N120, SGD02N120 dimensions TO-252AA (DPak) symbol A [mm] min max min max 6.40 6.73 0.2520 0.2650 0.2067 0.2165 B 5.25 5.50 C (0.65) (1.15) D 0.63 E F Power Semiconductors 10 [inch] 0.89 (0.0256) (0.0453) 0.0248 2.28 2.19 0.0350 0.2520 2.39 0.0862 0.0941 G 0.76 0.98 0.0299 0.0386 H 0.90 1.21 0.0354 0.0476 K 5.97 6.23 0.2350 0.2453 L 9.40 10.40 0.3701 0.4094 M 0.46 0.58 0.0181 0.0228 N 0.87 1.15 0.0343 0.0453 P 0.51 - 0.0201 - R 5.00 - 0.1969 - S 4.17 - 0.1642 - T 0.26 1.02 0.0102 0.0402 U - - - - Mar-00 SGP02N120 Preliminary SGB02N120, SGD02N120 i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors 11 Mar-00 Preliminary SGP02N120 SGB02N120, SGD02N120 Published by Infineon Technologies AG i Gr., Bereich Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Mar-00 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.