UNISONIC TECHNOLOGIES CO., LTD 12N65 Power MOSFET 12A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N65 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced by using UTC’s proprietary, planar stripe and DMOS technology. These devices are suited for high efficiency switch mode power supply. To minimize on-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode, the advanced technology has been especially tailored. FEATURES * RDS(ON) < 0.85Ω @ VGS = 10V, ID = 6.0A * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-583.D 12N65 Power MOSFET ORDERING INFORMATION Ordering Number Package Lead Free Halogen Free 12N65L-TA3-T 12N65G-TA3-T TO-220 12N65L-TF1-T 12N65G-TF1-T TO-220F1 12N65L-TF2-T 12N65G-TF2-T TO-220F2 12N65L-TF3-T 12N65G-TF3-T TO-220F 12N65L-T2Q-T 12N65G-T2Q-T TO-262 12N65L-TQ2-T 12N65G-TQ2-T TO-263 12N65L-TQ2-R 12N65G-TQ2-R TO-263 12N65L-T3P-T 12N65G-T3P-T TO-3P Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tape Reel Tube MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-583.D 12N65 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 12 A Continuous ID 12 A Drain Current 48 A Pulsed (Note 2) IDM Single Pulsed (Note 3) EAS 790 mJ Avalanche Energy 24 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 / TO-262 225 W TO-263 Power Dissipation PD TO-220F / TO-220F1 51 W TO-220F2 54 W TO-3P 260 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. L = 10mH, IAS = 12A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 4. ISD ≤ 12A, di/dt ≤200A/s, VDD ≤BVDSS Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 Junction to Ambient TO-262 / TO-263 TO-3P TO-220 / TO-262 TO-263 Junction to Case TO-220F/TO-220F1 TO-220F2 TO-3P SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC RATING UNIT 62.5 °C/W 40 °C/W 0.56 °C/W 2.43 2.31 0.48 °C/W °C/W °C/W 3 of 8 QW-R502-583.D 12N65 Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS VGS = 0 V, ID = 250 µA 650 V Drain-Source Leakage Current IDSS VDS = 650 V, VGS = 0 V 1 µA Gate-Source Leakage Current IGSS VGS = ±30 V, VDS = 0 V ±100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250µA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 6.0A 0.65 0.85 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 1480 1900 pF VDS = 25 V, VGS = 0 V, Output Capacitance COSS 200 270 pF f = 1MHz 25 35 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 42 54 nC VDS= 520V,ID= 12A, Gate-Source Charge QGS 8.6 nC VGS= 10 V (Note 1, 2) 21 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 30 70 ns VDD = 325V, ID = 12A, Turn-On Rise Time tR 115 240 ns RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 95 200 ns Turn-Off Fall Time tF 85 180 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS 12 A Forward Current Maximum Pulsed Drain-Source Diode ISM 48 A Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 12A 1.4 V Reverse Recovery Time tRR VGS = 0 V, IS = 12A, 380 ns dIF/dt = 100 A/µs (Note 1) Reverse Recovery Charge QRR 3.5 µC Notes: 1. Pulse Test : Pulse width ≤300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 8 QW-R502-583.D 12N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 8 QW-R502-583.D 12N65 Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 8 QW-R502-583.D 12N65 Power MOSFET TYPICAL CHARACTERISTICS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 8 QW-R502-583.D 12N65 TYPICAL CHARACTERISTICS Thermal Response, ZθJC(t) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 8 of 8 QW-R502-583.D