3VD499650YL 3VD499650YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD499650YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability; ¾ Avalanche Energy Specified; ¾ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode; ¾ CHIP TOPOGRAPHY The chips may packaged in TO-220 type and the typical equivalent product is 12N65; ¾ The packaged product is widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers; ¾ Die size: 5.66mm*4.4mm; ¾ Chip Thickness: 300±20μm; ¾ Top metal: Al, Backside Metal: Ag. ABSOLUTE MAXIMUM RATINGS (Tamb=25°C) Parameter Symbol Ratings Unit Drain-Source Voltage VDS 650 V Gate-Source Voltage VGS ±30 V Drain Current ID 12 A Power Dissipation (TO-220 Package) PD 180 W Operation Junction Temperature TJ 150 °C Tstg -55～+150 °C Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25°C) Parameter Drain -Source Breakdown Voltage Symbol BVDSS Test conditions Min. Typ. Max. Unit VGS=0V, ID=250µA 650 - - V Gate Threshold Voltage VTH VGS= VDS, ID=250µA 2.0 - 4.0 V Drain-Source Leakage Current IDSS VDS=650V, VGS=0V - - 1.0 µA VGS=10V, ID=6.0A - - 0.8 Ω IGSS VGS=±30V, VDS=0V - - ±100 nA VFSD IS=12A, VGS=0V - - 1.4 V Static Drain- Source On State Resistance Gate-Source Leakage Current Source-Drain Diode Forward on Voltage RDS(on) HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http: www.silan.com.cn REV:1.0 2008.10.15 Page 1 of 1