UNISONIC TECHNOLOGIES CO., LTD Preliminary UPC8026 Power MOSFET 30V, 13A N-CHANNEL POWER MOSFET DESCRIPTION The UTC UPC8026 is an N-channel enhancement mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low leakage current and high forward transfer admittance. FEATURES * VDS = 30V, ID = 13A * RDS(ON)=0.0051Ω @ VGS=10V, RDS(ON)=0.0075Ω @ VGS=4.5V * High forward transfer admittance: |Yfs|=30S * Low leakage current: IDSS<10μA @ VDS=30 V ORDERING INFORMATION Ordering Number Lead Free Halogen Free UPC8026L-S08-R UPC8026G-S08-R Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package Packing SOP-8 Tape Reel 1 of 4 QW-R502-600.a UPC8026 Preliminary Power MOSFET PIN CONFIGURATION UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 4 QW-R502-600.a UPC8026 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Drain-Gate Voltage (RGS=20kΩ) VDGR 30 V Continuous (Note 2) ID 13 A Drain Current Pulsed (Note 2) IDM 52 A Avalanche Current IAR 13 A Single Pulsed (Note 4) EAS 44 mJ Avalanche Energy Repetitive (Note 3, 5) EAR 0.048 mJ Power Dissipation (Nota 3) PD 1.9 W Channel Temperature TCH 150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Ensure that the channel temperature does not exceed 150°C. 3. Device mounted on a glass-epoxy board FR-4,25.4×25.4×0.8(unit: mm) 4. VDD=24V, TCH =25°C (initial), L=0.2mH, IAR = 13A 5. Repetitive rating: pulse width limited by max channel temperature THERMAL CHARACTERISTICS PARAMETER Junction to Ambient (Nota 3) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA RATINGS 65.8 UNIT °C/W 3 of 4 QW-R502-600.a UPC8026 Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER OFF CHARACTERISTICS SYMBOL Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current Forward Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance Forward Transfer Admittance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING PARAMETERS Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall-Time V(BR)DSS V(BR)DSX IDSS IGSS VGS(TH) RDS(ON) |YFS| CISS COSS CRSS QG QGS QGD tD(ON) tR tD(OFF) TEST CONDITIONS MIN TYP MAX UNIT ID=10mA, VGS=0V ID=10mA, VGS=−20 V VDS=30V, VGS=0 V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 10 VDS=10 V, ID=1mA VGS=4.5V, ID=6.5A VGS=10V, ID=6.5A VDS=10V, ID=6.5A 1.3 VDS=10V, VGS=0V, f=1MHz VDD≈24V, VGS=10V, ID=13 A tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain Reverse Current Pulse (Note 1) IDRP Forward Voltage (Diode) VDSF IDR=13A, VGS=0V Note: 1. Ensure that the channel temperature does not exceed 150°C. V 10 µA +100 nA -100 nA 15 2.5 10 6.6 7.5 5.1 30 V mΩ S 1800 570 370 pF pF pF 42 6.5 14 28 15 54 nC nC nC ns ns ns 21 ns 52 -1.2 A V UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 4 QW-R502-600.a