STD60NF3LL N-CHANNEL 30V - 0.0075Ω - 60A DPAK STripFET II POWER MOSFET TYPE STD60NF3LL ■ ■ ■ ■ ■ VDSS RDS(on) ID 30V <0.0095Ω 60A TYPICAL RDS(on) = 0.0075Ω OPTIMAL RDS(ON) x Qg TRADE-OFF @ 4.5V CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL 3 1 DPAK TO-252 DESCRIPTION This application specific Power Mosfet is the third genaration of STMicroelectronics unique “Single Feature Size ” strip-based process. The resulting transistor shows the best trade-off between onresistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ■ ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS Value Unit Drain-source Voltage (VGS = 0) Parameter 30 V Drain-gate Voltage (RGS = 20 kΩ) 30 V ± 16 V Gate- source Voltage ID Drain Current (continuos) at TC = 25°C 60 A ID Drain Current (continuos) at TC = 100°C 43 A Drain Current (pulsed) 240 A IDM (l ) PTOT EAS (1) Tstg Tj Total Dissipation at TC = 25°C 100 W Derating Factor 0.67 W/°C Single Pulse Avalanche Energy 700 mJ – 55 to 175 °C Storage Temperature Operating Junction Temperature ( ●) Pulse width limi ted by safe operating area April 2002 (1) Starting Tj=25°C, ID=30A, VDD=27.5V 1/9 STD60NF3LL THERMAL DATA Rthj-case Thermal Resistance Junction-case Max 1.5 °C/W Rthj-amb Thermal Resistance Junction-ambient Max 100 °C/W Maximum Lead Temperature For Soldering Purpose 300 °C Tl ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Test Conditions Min. Typ. Max. Unit Drain-source Breakdown Voltage ID = 250 µA, VGS = 0 Zero Gate Voltage Drain Current (V GS = 0) VDS = Max Rating 1 µA VDS = Max Rating, TC = 125 °C 10 µA Gate-body Leakage Current (VDS = 0) VGS = ± 16V ±100 nA Max. Unit 30 V ON (1) Symbol Parameter Test Conditions VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250µA R DS(on) Static Drain-source On Resistance VGS = 10 V, I D = 30 A VGS = 4.5 V , ID = 30 A Min. Typ. 1 V 0.0075 0.0085 0.0095 0.0105 Ω Ω Typ. Max. Unit DYNAMIC Symbol gfs (1) 2/9 Parameter Test Conditions Forward Transconductance VDS =15 V, ID =30 A VDS = 25V, f = 1 MHz, VGS = 0 Min. 30 S C iss Input Capacitance 2210 pF Coss Output Capacitance 635 pF Crss Reverse Transfer Capacitance 138 pF STD60NF3LL ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON Symbol td(on) tr Qg Qgs Q gd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions Min. VDD = 15V, ID = 30A RG = 4.7Ω VGS = 4.5V (see test circuit, Figure 3) VDD = 24V, ID = 60A, VGS = 4.5V Typ. Max. Unit 22 ns 130 ns 30 9 12.5 40 nC nC nC Typ. Max. Unit SWITCHING OFF Symbol Parameter Test Condit ions Min. td(off) tf Turn-off-Delay Time Fall Time VDD = 15V, ID = 30A, R G = 4.7Ω, VGS = 4.5V (see test circuit, Figure 3) 36.5 36.5 ns ns td(off) tf tc Off-voltage Rise Time Fall Time Cross-over Time Vclamp =24V, I D =30A R G = 4.7Ω, VGS = 4.5V (see test circuit, Figure 5) 32 23 40 ns ns ns SOURCE DRAIN DIODE Symbol Max. Unit Source-drain Current 60 A ISDM (1) Source-drain Current (pulsed) 240 A VSD (2) Forward On Voltage ISD = 60A, VGS = 0 1.2 V Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 60A, di/dt = 100A/µs, VDD = 15V, Tj = 150°C (see test circuit, Figure 5) ISD trr Qrr IRRM Parameter Test Conditions Min. Typ. 65 105 3.4 ns nC A Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Safe Operating Area Thermal Impedence 3/9 STD60NF3LL Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/9 STD60NF3LL Normalized Gate Thereshold Voltage vs Temp. Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/9 STD60NF3LL Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuit For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/9 STD60NF3LL TO-252 (DPAK) MECHANICAL DATA mm DIM. MIN. TYP. inch MAX. MIN. TYP. MAX. A 2.20 2.40 0.087 0.094 A1 0.90 1.10 0.035 0.043 A2 0.03 0.23 0.001 0.009 B 0.64 0.90 0.025 0.035 B2 5.20 5.40 0.204 0.213 C 0.45 0.60 0.018 0.024 C2 0.48 0.60 0.019 0.024 D 6.00 6.20 0.236 0.244 E 6.40 6.60 0.252 0.260 G 4.40 4.60 0.173 0.181 H 9.35 10.10 0.368 0.398 L2 L4 V2 0.8 0.60 0 o 0.031 1.00 8 o 0.024 0 o 0.039 0o P032P_B 7/9 STD60NF3LL DPAK FOOTPRINT TUBE SHIPMENT (no suffix)* All dimensions are in millimeters All dimensions are in millimeters TAPE AND REEL SHIPMENT (suffix ”T4”)* REEL MECHANICAL DATA DIM. mm MIN. DIM. mm MIN. MAX. MIN. 6.8 10.4 7 10.6 0.267 0.275 0.409 0.417 B1 D 1.5 12.1 1.6 0.476 0.059 0.063 D1 1.5 E 1.65 1.85 0.065 0.073 F K0 7.4 2.55 7.6 2.75 0.291 0.299 0.100 0.108 P0 P1 3.9 7.9 4.1 8.1 0.153 0.161 0.311 0.319 P2 1.9 2.1 0.075 0.082 A0 B0 R 40 W 15.7 * on sales type 8/9 inch MAX. 0.059 1.574 16.3 0.618 0.641 inch MIN. 330 MAX. A B 1.5 C D 12.8 20.2 13.2 0.504 0.520 0.795 G 16.4 18.4 0.645 0.724 N 50 T TAPE MECHANICAL DATA MAX. BASE QTY 2500 12.992 0.059 1.968 22.4 0.881 BULK QTY 2500 STD60NF3LL Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. 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