IRF IRF7455

PD- 93842B
IRF7455
SMPS MOSFET
HEXFET® Power MOSFET
Applications
High Frequency DC-DC Converters
with Synchronous Rectification
l
Benefits
Ultra-Low RDS(on) at 4.5V VGS
l Low Charge and Low Gate Impedance to
Reduce Switching Losses
l Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max
ID
30V
0.0075Ω
15A
l
A
A
D
1
8
S
2
7
D
S
3
6
D
G
4
5
D
S
SO-8
T o p V ie w
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipationƒ
Maximum Power Dissipationƒ
Linear Derating Factor
Junction and Storage Temperature Range
Max.
Units
30
± 12
15
12
120
2.5
1.6
0.02
-55 to + 150
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJA
Maximum Junction-to-Ambient„
Max.
Units
50
°C/W
Typical SMPS Topologies
l
Telecom 48V Input Converters with Logic-Level Driven Synchronous Rectifiers
Notes  through „ are on page 8
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1
4/20/00
IRF7455
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
30
–––
–––
Static Drain-to-Source On-Resistance –––
–––
Gate Threshold Voltage
0.6
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ. Max. Units
Conditions
––– –––
V
VGS = 0V, ID = 250µA
0.029 ––– V/°C Reference to 25°C, ID = 1mA
0.00600.0075
VGS = 10V, ID = 15A „
Ω
0.0069 0.009
VGS = 4.5V, ID = 12A „
0.010 0.020
VGS = 2.8V, ID = 3.5A „
––– 2.0
V
VDS = VGS, ID = 250µA
––– 20
VDS = 24V, VGS = 0V
µA
––– 100
VDS = 24V, VGS = 0V, T J = 125°C
––– 200
VGS = 12V
nA
––– -200
VGS = -12V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
44
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
37
8.9
13
17
18
51
44
3480
870
100
Max. Units
Conditions
–––
S
VDS = 10V, ID = 15A
56
ID = 15A
13
nC
VDS = 24V
20
VGS = 5.0V, ƒ
–––
VDD = 15V
–––
ID = 1.0A
ns
–––
RG = 6.0Ω
–––
VGS = 4.5V ƒ
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
EAS
IAR
EAR
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy
Typ.
Max.
Units
–––
–––
–––
200
15
0.25
mJ
A
mJ
Diode Characteristics
IS
ISM
VSD
trr
Q rr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
2.5
A
–––
–––
120
–––
–––
–––
–––
64
99
1.2
96
150
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 2.5A, VGS = 0V
TJ = 25°C, IF = 2.5A
di/dt = 100A/µs ƒ
D
S
ƒ
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IRF7455
1000
1000
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
TOP
100
100
2.5V
20µs PULSE WIDTH
TJ = 25 ° C
10
0.1
1
10
100
2.5V
10
0.1
VDS , Drain-to-Source Voltage (V)
2.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
100
TJ = 150 ° C
TJ = 25 ° C
V DS = 15V
20µs PULSE WIDTH
2.6
2.8
3.0
3.2
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
1000
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
2.4
20µs PULSE WIDTH
TJ = 150 ° C
3.4
ID = 15A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7455
6000
VGS, Gate-to-Source Voltage (V)
5000
C, Capacitance (pF)
12
VGS = 0V,
f = 1MHz
Ciss = Cgs + Cgd , Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
4000
Ciss
3000
2000
Coss
1000
1
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
0
10
100
0
20
VDS , Drain-to-Source Voltage (V)
40
60
80
QG , Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
VDS = 24V
10
Crss
0
ID = 15A
1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
I D , Drain Current (A)
100
TJ = 150 ° C
100
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
2.2
10us
100us
10
1ms
10ms
TA = 25 ° C
TJ = 150 ° C
Single Pulse
1
0.1
1
10
100
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7455
16
VDS
I D , Drain Current (A)
VGS
RD
D.U.T.
RG
12
+
- VDD
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
0
25
50
75
100
125
TC , Case Temperature
150
( °C)
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
100
Thermal Response (Z thJA )
D = 0.50
0.20
10
0.10
0.05
0.02
1
0.01
P DM
t1
0.1
SINGLE PULSE
(THERMAL RESPONSE)
0.01
0.00001
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRF7455
R DS(on) , Drain-to -Source On Resistance ( Ω )
R DS (on) , Drain-to-Source On Resistance ( Ω)
0.008
VGS = 4.5V
0.007
0.006
VGS = 10V
0.005
0
20
40
60
80
100
0.012
0.010
ID = 15A
0.008
0.006
120
2.5
3.0
3.5
4.0
4.5
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
QGS
.3µF
D.U.T.
+
V
- DS
QGD
500
VG
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
.2µF
12V
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V (B R )D S S
tp
L
VD S
D.U .T
RG
IA S
20 V
tp
IAS
DRIVER
+
V
- DD
0.0 1 Ω
Fig 14a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
400
BOTTOM
ID
6.7A
9.5A
15A
300
200
100
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 14c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7455
SO-8 Package Details
D IM
D
-B -
5
8
E
-A -
1
7
2
5
A
6
3
e
6X
5
H
0.2 5 (.0 10 )
4
M
A M
θ
e1
K x 45 °
-C-
0 .10 (.00 4)
B 8X
0 .25 (.01 0)
A1
L
8X
6
C
8X
M C A S B S
N O TE S :
1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2.
2 . C O N TRO L LIN G D IM EN SIO N : IN C H .
3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S).
4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA .
5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S
M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6).
6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE..
M IN
M AX
.0532
.0688
1 .35
1 .75
.0040
.0098
0 .10
0 .25
B
.014
.018
0 .36
0 .46
C
.0 075
.0 098
0 .19
0.25
D
.1 89
.1 96
4 .80
4.98
E
.150
.157
3 .81
3 .99
e1
A
M IL LIM E T E R S
MAX
A1
e
θ
IN C H E S
M IN
.050 B A S IC
1.2 7 B A S IC
.025 B A S IC
0.6 35 B A S IC
H
.2 284
.2 440
K
.011
.019
0 .28
5 .80
0 .48
6.20
L
0 .16
.050
0 .41
1.27
θ
0°
8°
0°
8°
R E CO M M E ND E D F O O TP R IN T
0 .72 (.02 8 )
8X
6 .46 ( .25 5 )
1 .78 (.07 0)
8X
1.27 ( .0 50 )
3X
SO-8 Part Marking
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7
IRF7455
SO-8 Tape and Reel
TER M IN AL N UM B ER 1
1 2.3 ( .484 )
1 1.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
F EE D D IRE C TIO N
N OT E S :
1 . CO NT RO L L ING DIM E NSIO N : M IL L IM E T E R .
2 . AL L DIM E NS ION S ARE SHO W N IN M ILL IM E TER S (INC HE S ).
3 . OU TL IN E CO N FO RM S T O E IA -4 8 1 & E IA -5 4 1 .
33 0.00
(12.992)
M AX .
14.4 0 ( .566 )
12.4 0 ( .488 )
N O T ES :
1 . CO NT RO LL ING D IM EN SIO N : M ILLIME TER .
2 . O U TLIN E C O NF O RM S T O E IA-48 1 & E IA -54 1.
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature.
‚ Starting TJ = 25°C, L = 1.8mH
ƒ Pulse width ≤ 300µs; duty cycle ≤ 2%.
„ When mounted on 1 inch square copper board, t<10 sec
RG = 25Ω, IAS = 15A.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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