UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT80N10 Power MOSFET 80A, 100V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80N10 is an N-channel power MOSFET using UTC’s advanced technology to provide the customers with perfect RDS(ON), high switching speed, high current capacity and low gate charge. The UTC UTT80N10 is suitable for DC-DC converters, Off-Line UPS, High Voltage Synchronous Rectifier, Primary Switch for 48V and 24V Systems, etc. FEATURES * RDS(ON)=18mΩ @ VGS=10V,ID=80A * High Switching Speed * High Current Capacity * Low Gate Charge(typical 49nC) SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free UTT80N10L-TA3-T UTT80N10G-TA3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2011 Unisonic Technologies Co., Ltd Package TO-220 Pin Assignment 1 2 3 G D S Packing Tube 1 of 3 QW-R502-712.a UTT80N10 Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 100 V Gate-Source Voltage VGSS ±20 V 80 A Continuous ID Drain Current Pulsed (Note 2) IDM 320 A Single Pulsed Avalanche Energy (Note 3) EAS 416 mJ Power Dissipation PD 211 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 3. L = 0.13mH, IAS = 80A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL θJA θJC RATINGS 62 0.59 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=80V, VGS=0V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=80A DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS VGS=0V, VDS=25V, f=1.0MHz Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG Gate to Source Charge QGS VGS=10V, VDD=50V, ID=80A Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=50V, ID=80A, VGS=10V, RGS=5.0Ω Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD ISD=80A Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Body Diode Reverse Recovery Time trr IS=40A, dI/dt=100A/µs Body Diode Reverse Recovery Charge QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 100 3.5 V 1 µA +100 nA -100 nA 4.5 15 5.5 18 V mΩ 4152 485 220 pF pF pF 350 23 16 90 100 450 200 nC nC nC ns ns ns ns 0.99 1.25 80 320 70 105 202 303 V A A ns nC 2 of 3 QW-R502-712.a UTT80N10 Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-712.a