LL4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES • Silicon epitaxial planar diodes • Low forward voltage drop • High forward current capability • AEC-Q101 qualified • Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS MECHANICAL DATA • High speed switch and general purpose use in computer and industrial applications Case: MiniMELF SOD-80 Weight: approx. 31 mg Cathode band color: black Packaging codes/options: GS08/2.5K per 7" reel (8 mm tape),12.5K/box GS18/10K per 13" reel (8 mm tape),10K/box PARTS TABLE PART LL4150 ORDERING CODE TYPE MARKING INTERNAL CONSTRUCTION REMARKS LL4150GS08 or LL4150GS18 - Single diode Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT VRRM 50 V VR 50 V tp = 1 μs IFSM 4 A IF 600 mA VR = 0 IF(AV) 300 mA Ptot 500 mW Repetitive peak reverse voltage Reverse voltage Peak forward surge current Forward continuous current Average forward current Power dissipation THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER Thermal resistance junction to ambient air Junction temperature TEST CONDITION SYMBOL VALUE UNIT On PC board 50 mm x 50 mm x 1.6 mm RthJA 300 K/W Tj 175 °C Storage temperature range Tstg -65 to +175 °C Operating temperature range Top -55 to +175 °C Rev. 1.9, 11-Nov-13 Document Number: 85558 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 LL4150 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. MAX. UNIT IF = 1 mA VF 0.540 0.620 V IF = 10 mA VF 0.660 0.740 V IF = 50 mA VF 0.760 0.860 V IF = 100 mA VF 0.820 0.920 V IF = 200 mA VF 0.870 1 V Forward voltage VR = 50 V IR 100 nA VR = 50 V, Tj = 150 °C IR 100 μA VR = 0, f = 1 MHz, VHF = 50 mV CD 2.5 pF IF = IR = 10 mA to 100 mA, iR = 0.1 x IR, RL = 100 trr 4 ns Reverse current Diode capacitance Reverse recovery time TYP. TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) 1000 Scattering Limit IF - Forward Current (mA) IR - Reverse Current (µA) 100 10 1 0.1 VR = 50 V 0.01 0 94 9100 40 80 120 160 100 Scattering Limit 10 1 TJ = 25 °C 0.1 200 TJ - Junction Temperature (°C) 0 0.4 0.8 1.2 1.6 2.0 VF - Forward Voltage (V) 94 9162 Fig. 2 - Forward Current vs. Forward Voltage Fig. 1 - Reverse Current vs. Junction Temperature PACKAGE DIMENSIONS in millimeters (inches): MiniMELF SOD-80 1.6 (0.063) 1.4 (0.055) Cathode indentification * 0.47 (0.019) max. 3.7 (0.146) 3.3 (0.130) * The gap between plug and glass can be either on cathode or anode side 2.5 (0.098) max. 1.25 (0.49) min. 2 (0.079) min. Foot print recommendation: Document no.:6.560-5005.01-4 Rev. 8 - Date: 07.June.2006 5 (0.197) ref. 96 12070 Rev. 1.9, 11-Nov-13 Document Number: 85558 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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