DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 PBSS4240DPN 40 V low VCEsat NPN/PNP transistor Product data sheet 2003 Feb 20 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor FEATURES • Low collector-emitter saturation voltage VCEsat PBSS4240DPN QUICK REFERENCE DATA MAX. • High collector current capability IC and ICM SYMBOL PARAMETER UNIT NPN PNP • High collector current gain hFE at high IC • High efficiency leading to reduced heat generation • Reduced printed-circuit board area requirements. APPLICATIONS • Power management: – Complementary MOSFET driver VCEO emitter-collector voltage 40 −40 V IC collector current (DC) 1.35 −1.1 A ICRP repetitive peak collector current 2 −2 A ICM peak collector current 3 −3 A RCEsat equivalent on-resistance 200 260 mΩ – Dual supply line switching. • Peripheral driver: PINNING – Half and full bridge motor drivers – Multi-phase stepper motor driver. PIN DESCRIPTION 1, 4 emitter TR1; TR2 DESCRIPTION 2, 5 base TR1; TR2 NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74) plastic package. 6, 3 collector TR1; TR2 MARKING TYPE NUMBER PBSS4240DPN 6 handbook, halfpage 5 6 4 5 4 MARKING CODE TR2 M3 TR1 1 Top view Fig.1 2003 Feb 20 2 2 3 1 2 3 MAM445 Simplified outline SOT457 (SC-74) and symbol. NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 5 V IC collector current (DC) − NPN − 1.35 A PNP − −1.1 A ICRP repetitive peak collector current note 1 − 2 A ICM peak collector current single peak − 3 A IB base current (DC) − 300 mA IBM peak base current − 1 A Ptot total power dissipation Tamb ≤ 25 °C; note 2 − 370 mW Tamb ≤ 25 °C; note 3 − 310 mW Tamb ≤ 25 °C; note 1 − 1.1 W Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C − 600 mW Per device Ptot total power dissipation Tamb ≤ 25 °C; note 2 Notes 1. Operated under pulsed conditions: duty cycle δ ≤ 20%; pulse width tp ≤ 10 ms; mounting pad for collector standard footprint. 2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint. THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT in free air; note 1 340 K/W in free air; note 2 110 K/W Per transistor Rth j-a thermal resistance from junction to ambient Notes 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 2. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.20; mounting pad for collector standard footprint. 2003 Feb 20 3 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Per transistor unless otherwise specified; for the PNP transistor with negative polarity VCB = 40 V; IE = 0 − − 100 nA VCB = 40 V; IE = 0; Tj = 150 °C − − 50 μA VCE = 30 V; IB = 0 − − 100 nA emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 nA hFE DC current gain VCE = 5 V; IC = 1 mA 300 − − fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 150 − − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 12 pF DC current gain VCE = 5 V; IC = 500 mA 300 − 900 VCE = 5 V; IC = 1 A 200 − − VCE = 5 V; IC = 2 A; note 1 75 − − IC = 100 mA; IB = 1 mA − 60 75 mV IC = 500 mA; IB = 50 mA − 80 100 mV IC = 1 A; IB = 100 mA − 150 200 mV IC = 2 A; IB = 200 mA; note 1 − 300 400 mV ICBO collector-base cut-off current ICEO collector-emitter cut-off current IEBO TR1 (NPN) hFE VCEsat collector-emitter saturation voltage VBEsat base-emitter saturation voltage IC = 1 A; IB = 100 mA − − 1.2 V VBEon base-emitter turn-on voltage VCE = 5 V; IC = 1 A − − 1.1 V RCEsat equivalent on-resistance IC = 1 A; IB = 100 mA − − 200 mΩ DC current gain VCE = −5 V; IC = −100 mA 300 − 800 VCE = −5 V; IC = −500 mA 250 − − VCE = −5 V; IC = −1 A 160 − − VCE = −5 V; IC = −2 A; note 1 50 − − IC = −100 mA; IB = −1 mA − −90 −120 mV IC = −500 mA; IB = −50 mA − −100 −145 mV IC = −1 A; IB = −100 mA − −180 −260 mV IC = −2 A; IB = −200 mA; note 1 − −400 −530 mV TR2 (PNP) hFE VCEsat saturation voltage VBEsat saturation voltage IC = −1 A; IB = −50 mA − − −1.1 V VBEon base-emitter turn-on voltage VCE = −5 V; IC = −1 A − − −1 V RCEsat equivalent on-resistance IC = −1 A; IB = −100 mA; note 1 − − 260 mΩ Note 1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02. 2003 Feb 20 4 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC471 800 MHC472 1.2 handbook, halfpage handbook, halfpage hFE VBE (1) (V) 600 (1) 0.8 (2) (2) 400 (3) 0.4 (3) 200 0 10−1 1 10 102 0 10−1 103 104 IC (mA) 1 TR1 (NPN); VCE = 5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); VCE = 5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC473 103 handbook, halfpage 10 102 103 104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC474 1.2 handbook, halfpage VBEsat (V) VCEsat (mV) 1 (1) 0.8 (2) 102 (1) 0.6 (2) (3) 0.4 (3) 10 10−1 1 10 102 0.2 10−1 103 104 IC (mA) 1 TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 5 10 102 103 104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC475 2 IC (A) MHC476 103 handbook, halfpage (1) (2) (3) handbook, halfpage RCEsat (Ω) (4) (5) (6) 1.6 102 (7) 1.2 (8) (9) 10 (10) 0.8 1 0.4 (1) 10−1 10−1 0 0.8 0.4 0 1.2 1.6 2 VCE (V) TR1 (NPN); Tamb = 25 °C. (1) (2) (3) (4) IB = 30 mA. IB = 27 mA. IB = 24 mA. IB = 21 mA. (5) IB = 18 mA. (9) IB = 6 mA. (6) IB = 15 mA. (7) IB = 12 mA. (8) IB = 9 mA. (10) IB = 3 mA. Collector current as a function of collector-emitter voltage; typical values. 2003 Feb 20 1 10 102 103 104 IC (mA) TR1 (NPN); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.7 Fig.6 (2) (3) 6 Collector-emitter equivalent on-resistance as a function of collector current; typical values. NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC464 1000 MHC465 −1.2 handbook, halfpage handbook, halfpage hFE VBE (V) 800 (1) (1) −0.8 (2) 600 (3) (2) 400 −0.4 (3) 200 0 −10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) −1 TR2 (PNP); VCE = −5 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); VCE = −5 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.9 DC current gain as a function of collector current; typical values. MHC466 −103 handbook, halfpage −10 −102 −103 −104 IC (mA) Base-emitter voltage as a function of collector current; typical values. MHC467 −1.2 handbook, halfpage VBEsat (V) VCEsat −1 (mV) −102 (1) −0.8 (1) (2) (2) −0.6 (3) −10 (3) −0.4 −1 −10−1 −1 −10 −102 −0.2 −10−1 −103 −104 IC (mA) TR2 (PNP); IC/IB = 20. −1 −10 −102 −104 −103 IC (mA) (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR2 (PNP); IC/IB = 20. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. Fig.11 Base-emitter saturation voltage as a function of collector current; typical values. 2003 Feb 20 7 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC468 −1.2 MHC469 −2.4 IC (A) −2 handbook, halfpage handbook, halfpage IC (A) (4) (3) −0.8 (2) (1) (1) (2) (3) (4) (5) −1.6 (5) (6) (7) (8) (6) (7) −1.2 (9) (8) −0.4 −0.8 (9) (10) 0 0 −0.8 −0.4 −1.2 −0.4 0 −1.4 −2 VCE (V) 0 TR2 (PNP); Tamb = 25 °C. (1) (2) (3) (4) IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. (5) IB = −4.2 mA. (6) IB = −3.5 mA. (7) IB = −2.8 mA. (8) IB = −2.1 mA. −0.8 −0.4 −1.2 −1.6 −2 VCE (V) TR2 (PNP); Tamb = 25 °C. (9) IB = −1.4 mA. (1) (2) (3) (4) (10) IB = −0.7 mA. Fig.12 Collector current as a function of collector-emitter voltage; typical values. 2003 Feb 20 (10) IB = −50 mA. IB = −45 mA. IB = −40 mA. IB = −35 mA. (5) IB = −30 mA. (6) IB = −25 mA. (7) IB = −20 mA. (8) IB = −15 mA. (9) IB = −10 mA. (10) IB = −5 mA. Fig.13 Collector current as a function of collector-emitter voltage; typical values. 8 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN MHC470 103 handbook, halfpage RCEsat (Ω) 102 10 (1) (2) 1 (3) 10−1 −10−1 −1 −10 −102 −103 −104 IC (mA) TR2 (PNP); IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.14 Collector-emitter equivalent on-resistance as a function of collector current; typical values. 2003 Feb 20 9 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN PACKAGE OUTLINE Plastic surface mounted package; 6 leads SOT457 D E B y A HE 6 X v M A 4 5 Q pin 1 index A A1 c 1 2 3 Lp bp e w M B detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp c D E e HE Lp Q v w y mm 1.1 0.9 0.1 0.013 0.40 0.25 0.26 0.10 3.1 2.7 1.7 1.3 0.95 3.0 2.5 0.6 0.2 0.33 0.23 0.2 0.2 0.1 OUTLINE VERSION SOT457 2003 Feb 20 REFERENCES IEC JEDEC EIAJ SC-74 10 EUROPEAN PROJECTION ISSUE DATE 97-02-28 01-05-04 NXP Semiconductors Product data sheet 40 V low VCEsat NPN/PNP transistor PBSS4240DPN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. DISCLAIMERS General ⎯ Information in this document is believed to be accurate and reliable. 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No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: [email protected] © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp12 Date of release: 2003 Feb 20 Document order number: 9397 750 10783