PHILIPS PBSS4240DPN

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D302
PBSS4240DPN
40 V low VCEsat NPN/PNP
transistor
Product specification
2003 Feb 20
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
FEATURES
• Low collector-emitter saturation voltage VCEsat
PBSS4240DPN
QUICK REFERENCE DATA
MAX.
• High collector current capability IC and ICM
SYMBOL
PARAMETER
UNIT
NPN PNP
• High collector current gain hFE at high IC
• High efficiency leading to reduced heat generation
• Reduced printed-circuit board area requirements.
APPLICATIONS
• Power management:
– Complementary MOSFET driver
40
−40
collector current (DC)
1.35
−1.1
A
repetitive peak
collector current
2
−2
A
ICM
peak collector current
3
−3
A
RCEsat
equivalent
on-resistance
200
260
mΩ
VCEO
emitter-collector
voltage
IC
ICRP
– Dual supply line switching.
• Peripheral driver:
PINNING
– Half and full bridge motor drivers
– Multi-phase stepper motor driver.
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
DESCRIPTION
2, 5
base
TR1; TR2
NPN/PNP low VCEsat transistor pair in a SOT457 (SC-74)
plastic package.
6, 3
collector
TR1; TR2
MARKING
TYPE NUMBER
PBSS4240DPN
6
handbook, halfpage
5
6
4
5
4
MARKING CODE
TR2
M3
TR1
1
Top view
Fig.1
2003 Feb 20
2
2
3
1
2
3
MAM445
Simplified outline SOT457 (SC-74) and
symbol.
V
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCBO
collector-base voltage
open emitter
−
40
VCEO
collector-emitter voltage
open base
−
40
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
V
−
NPN
−
1.35
A
PNP
−
−1.1
A
ICRP
repetitive peak collector current
note 1
−
2
A
ICM
peak collector current
single peak
−
3
A
IB
base current (DC)
−
300
mA
IBM
peak base current
−
1
A
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
−
370
mW
Tamb ≤ 25 °C; note 3
−
310
mW
Tamb ≤ 25 °C; note 1
−
1.1
W
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
−
600
mW
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 2
Notes
1. Operated under pulsed conditions: duty cycle δ ≤ 20%; pulse width tp ≤ 10 ms; mounting pad for collector standard
footprint.
2. Device mounted on a printed-circuit board; single-sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single-sided copper; tinplated; standard footprint.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
in free air; note 1
340
K/W
in free air; note 2
110
K/W
Per transistor
Rth j-a
thermal resistance from junction to
ambient
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2.
2. Operated under pulsed conditions: pulse width tp ≤ 10 ms; duty cycle δ ≤ 0.20; mounting pad for collector standard
footprint.
2003 Feb 20
3
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per transistor unless otherwise specified; for the PNP transistor with negative polarity
VCB = 40 V; IE = 0
−
−
ICBO
collector-base cut-off current
100
nA
VCB = 40 V; IE = 0; Tj = 150 °C
−
−
50
µA
ICEO
collector-emitter cut-off current
VCE = 30 V; IB = 0
−
−
100
nA
IEBO
emitter-base cut-off current
VEB = 5 V; IC = 0
−
−
100
nA
hFE
DC current gain
VCE = 5 V; IC = 1 mA
300
−
−
fT
transition frequency
IC = 50 mA; VCE = 10 V;
f = 100 MHz
150
−
−
MHz
Cc
collector capacitance
VCB = 10 V; IE = Ie = 0;
f = 1 MHz
−
−
12
pF
DC current gain
VCE = 5 V; IC = 500 mA
300
−
900
VCE = 5 V; IC = 1 A
200
−
−
TR1 (NPN)
hFE
VCEsat
collector-emitter saturation voltage
VCE = 5 V; IC = 2 A; note 1
75
−
−
IC = 100 mA; IB = 1 mA
−
60
75
mV
IC = 500 mA; IB = 50 mA
−
80
100
mV
IC = 1 A; IB = 100 mA
−
150
200
mV
IC = 2 A; IB = 200 mA; note 1
−
300
400
mV
VBEsat
base-emitter saturation voltage
IC = 1 A; IB = 100 mA
−
−
1.2
V
VBEon
base-emitter turn-on voltage
VCE = 5 V; IC = 1 A
−
−
1.1
V
RCEsat
equivalent on-resistance
IC = 1 A; IB = 100 mA
−
−
200
mΩ
DC current gain
VCE = −5 V; IC = −100 mA
300
−
800
VCE = −5 V; IC = −500 mA
250
−
−
VCE = −5 V; IC = −1 A
160
−
−
TR2 (PNP)
hFE
VCEsat
saturation voltage
VCE = −5 V; IC = −2 A; note 1
50
−
−
IC = −100 mA; IB = −1 mA
−
−90
−120
mV
IC = −500 mA; IB = −50 mA
−
−100
−145
mV
IC = −1 A; IB = −100 mA
−
−180
−260
mV
IC = −2 A; IB = −200 mA; note 1
−
−400
−530
mV
VBEsat
saturation voltage
IC = −1 A; IB = −50 mA
−
−
−1.1
V
VBEon
base-emitter turn-on voltage
VCE = −5 V; IC = −1 A
−
−
−1
V
RCEsat
equivalent on-resistance
IC = −1 A; IB = −100 mA; note 1
−
−
260
mΩ
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2003 Feb 20
4
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC471
800
MHC472
1.2
handbook, halfpage
handbook, halfpage
hFE
VBE
(1)
(V)
600
(1)
0.8
(2)
(2)
400
(3)
0.4
(3)
200
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
TR1 (NPN); VCE = 5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR1 (NPN); VCE = 5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MHC473
103
handbook, halfpage
10
102
103
104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHC474
1.2
handbook, halfpage
VBEsat
VCEsat
(V)
(mV)
1
(1)
0.8
(2)
102
(1)
0.6
(2)
(3)
0.4
(3)
10
10−1
1
10
102
0.2
10−1
103
104
IC (mA)
1
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Collector-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20
5
10
102
103
104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC475
2
IC
(A)
MHC476
103
handbook, halfpage
(1)
(2)
(3)
handbook, halfpage
RCEsat
(Ω)
(4)
(5)
(6)
1.6
102
(7)
1.2
(8)
(9)
10
(10)
0.8
1
0.4
(1)
10−1
10−1
0
0.4
0
0.8
1.2
1.6
2
VCE (V)
TR1 (NPN); Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = 30 mA.
IB = 27 mA.
IB = 24 mA.
IB = 21 mA.
(5)
(6)
(7)
(8)
IB = 18 mA.
IB = 15 mA.
IB = 12 mA.
IB = 9 mA.
Collector current as a function of
collector-emitter voltage; typical values.
2003 Feb 20
1
10
102
103
104
IC (mA)
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(9) IB = 6 mA.
(10) IB = 3 mA.
Fig.7
Fig.6
(2)
(3)
6
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC464
1000
MHC465
−1.2
handbook, halfpage
handbook, halfpage
hFE
VBE
(V)
800
(1)
(1)
−0.8
(2)
600
(3)
(2)
400
−0.4
(3)
200
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
TR2 (PNP); VCE = −5 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.8
Fig.9
DC current gain as a function of collector
current; typical values.
MHC466
−103
handbook, halfpage
−10
−102
−103
−104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
MHC467
−1.2
handbook, halfpage
VBEsat
(V)
VCEsat
−1
(mV)
−102
(1)
−0.8
(1)
(2)
(2)
−0.6
(3)
−10
(3)
−0.4
−1
−10−1
−1
−10
−102
−0.2
−10−1
−103
−104
IC (mA)
−1
−10
−102
−103
−104
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.10 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Base-emitter saturation voltage as a
function of collector current; typical values.
2003 Feb 20
7
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC468
−1.2
MHC469
−2.4
IC
(A)
−2
handbook, halfpage
handbook, halfpage
IC
(A)
(4)
(3)
−0.8
(2)
(1)
(1)
(2)
(3)
(4)
(5)
−1.6
(5)
(6)
(7)
(8)
(6)
(7)
−1.2
(9)
(8)
−0.4
−0.8
(9)
(10)
0
0
−0.4
−0.8
−1.2
−0.4
0
−2
−1.4
VCE (V)
0
TR2 (PNP); Tamb = 25 °C.
(1)
(2)
(3)
(4)
IB = −7 mA.
IB = −6.3 mA.
IB = −5.6 mA.
IB = −4.9 mA.
(5)
(6)
(7)
(8)
−0.4
−0.8
−1.2
−1.6
−2
VCE (V)
TR2 (PNP); Tamb = 25 °C.
IB = −4.2 mA.
IB = −3.5 mA.
IB = −2.8 mA.
IB = −2.1 mA.
(9) IB = −1.4 mA.
(10) IB = −0.7 mA.
(1)
(2)
(3)
(4)
Fig.12 Collector current as a function of
collector-emitter voltage; typical values.
2003 Feb 20
(10)
IB = −50 mA.
IB = −45 mA.
IB = −40 mA.
IB = −35 mA.
(5)
(6)
(7)
(8)
IB = −30 mA.
IB = −25 mA.
IB = −20 mA.
IB = −15 mA.
(9) IB = −10 mA.
(10) IB = −5 mA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
8
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
MHC470
103
handbook, halfpage
RCEsat
(Ω)
102
10
(1)
(2)
1
(3)
10−1
−10−1
−1
−10
−102
−103
−104
IC (mA)
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.14 Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2003 Feb 20
9
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT457
D
E
B
y
A
HE
6
5
X
v M A
4
Q
pin 1
index
A
A1
c
1
2
3
Lp
bp
e
w M B
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
bp
c
D
E
e
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.013
0.40
0.25
0.26
0.10
3.1
2.7
1.7
1.3
0.95
3.0
2.5
0.6
0.2
0.33
0.23
0.2
0.2
0.1
OUTLINE
VERSION
SOT457
2003 Feb 20
REFERENCES
IEC
JEDEC
EIAJ
SC-74
10
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
01-05-04
Philips Semiconductors
Product specification
40 V low VCEsat NPN/PNP transistor
PBSS4240DPN
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Feb 20
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA75
© Koninklijke Philips Electronics N.V. 2003
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
613514/01/pp12
Date of release: 2003
Feb 20
Document order number:
9397 750 10783