AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular ACDC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 700V@150℃ 12A RDS(ON) (at VGS=10V) < 0.65Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT12N60FDL & AOB12N60FDL & AOTF12N60FDL Top View TO-220 D TO-263 D2PAK TO-220F D G G D S AOT12N60FD G D S G AOTF12N60FD AOB12N60FD Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT12N60FD/AOB12N60FD Drain-Source Voltage VDS 600 Gate-Source Voltage Continuous Drain Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D 12 ID Units V V 12* 8 8* A IDM 48 IAR 5 A EAR 375 mJ EAS dv/dt 750 5 mJ V/ns W PD 278 50 2.2 0.4 TJ, TSTG TL Symbol RθJA RθCS -55 to 150 W/ oC °C 300 °C AOT12N60FD/AOB12N60FD 65 AOTF12N60FD 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev.4.0:June 2013 AOTF12N60FD ±30 VGS TC=25°C S S www.aosmd.com Page 1 of 6 AOT12N60FD/AOB12N60FD/AOTF12N60FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=10mA, VGS=0V, TJ=25°C 600 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V ID=250µA ID=10mA, VGS=0V, TJ=150°C 700 V ID=10mA, VGS=0V 0.68 V/ oC VDS=600V, VGS=0V 10 VDS=480V, TJ=125°C 100 ±100 2.4 µA 3 4 nΑ V 0.65 Ω 1.6 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A 0.51 gFS Forward Transconductance VDS=40V, ID=6A 12 VSD Diode Forward Voltage IS=12A,VGS=0V 1.3 IS Maximum Body-Diode Continuous Current 12 A ISM Maximum Body-Diode Pulsed Current 48 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 1310 1659 2010 pF 110 166 220 pF 9 15.8 23 pF 1.8 3.7 5.6 Ω 41 50 nC 32 VGS=10V, VDS=480V, ID=12A S 8.7 nC Gate Drain Charge 19 nC tD(on) Turn-On DelayTime 34 ns tr Turn-On Rise Time 90 ns tD(off) Turn-Off DelayTime 120 ns tf trr Turn-Off Fall Time 82 ns IF=12A,dI/dt=100A/µs,VDS=100V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=12A,dI/dt=100A/µs,VDS=100V 135 220 0.5 0.8 Qgs Gate Source Charge Qgd Qrr VGS=10V, VDS=300V, ID=12A, RG=25Ω ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.4.0: June 2013 www.aosmd.com Page 2 of 6 AOT12N60FD/AOB12N60FD/AOTF12N60FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 24 100 10V 6V 16 10 VGS=5.5V 12 125°C ID(A) ID (A) -55°C VDS=40V 6.5V 20 8 1 25°C 4 0.1 0 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 10 3 Normalized On-Resistance VGS=10V 0.9 RDS(ON) (Ω) 8 VGS(Volts) Figure 2: Transfer Characteristics 1.2 0.6 0.3 2.5 0 4 8 12 16 20 24 VGS=10V ID=6A 2 1.5 1 0.5 0 -100 0.0 28 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+02 1.2 1.0E+01 1.1 125°C 1.0E+00 IS (A) BVDSS (Normalized) 6 1 1.0E-01 25°C 1.0E-02 1.0E-03 0.9 1.0E-04 0.8 -100 1.0E-05 -50 0 50 100 150 200 TJ (°C) Figure 5:Break Down vs. Junction Temperature Rev.4.0: June 2013 www.aosmd.com 0.0 0.4 0.8 1.2 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics(Note E) Page 3 of 6 AOT12N60FD/AOB12N60FD/AOTF12N60FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 Ciss VDS=480V ID=12A 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 Crss 10 3 1 0 0 10 20 30 40 50 0.1 60 1 10 100 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100 100 10µs 10µs RDS(ON) limited 10 100µs 1ms 1 10ms DC 0.1s ID (Amps) ID (Amps) 10 RDS(ON) limited 100µs 1ms 1 10ms 0.1s DC 1s 0.1 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT12N60FD/AOB12N60FD (Note F) 1 10 100 1000 VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF12N60FD (Note F) Current rating ID(A) 15 12 9 6 3 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev.4.0: June 2013 www.aosmd.com Page 4 of 6 AOT12N60FD/AOB12N60FD/AOTF12N60FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT12N60FD/AOB12N60FD (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF12N60FD (Note F) 15 AOT(B)(TF)12N60FD 10 VDS=100V IF=12A dI/dt=100A/µs IF (A) 5 0 -5 -10 -15 -20 -600 AOT(B)(TF)12N60 -300 0 300 600 900 1200 Trr (nS) Figure 14: Diode Recovery Characteristics Rev.4.0: June 2013 www.aosmd.com Page 5 of 6 AOT12N60FD/AOB12N60FD/AOTF12N60FD Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev.4.0: June 2013 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6