Datasheet

AOT1404L/AOB1404L
40V N-Channel Rugged Planar MOSFET
General Description
Product Summary
The AOT1404L/AOB1404L uses a robust technology that
is designed to provide efficient and reliable power
conversion even in the most demanding applications,
including motor control. With low RDS(ON) and excellent
thermal capability this device is appropriate for high
current switching and can endure adverse operating
conditions.
VDS
40V
ID (at VGS=10V)
220A
RDS(ON) (at VGS=10V)
< 4.2mΩ
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
Bottom View
Top View
D
D
Bottom View
D
D
D
G
G
D
S
S
D
G
S
Continuous Drain
Current G
VGS
TC=25°C
Pulsed Drain Current C
Continuous Drain
Current
±20
V
157
A
15
IDSM
TA=70°C
Units
V
500
IDM
TA=25°C
Maximum
40
220
ID
TC=100°C
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
G
G
A
11
Avalanche Current C
IAS, IAR
140
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
980
mJ
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
TA=25°C
Rev1: May 2011
2.1
Steady-State
Steady-State
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
W
208
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
417
PD
-55 to 175
Typ
12
48
0.3
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°C
Max
15
60
0.36
Units
°C/W
°C/W
°C/W
Page 1 of 6
AOT1404L/AOB1404L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS, ID=250µΑ
2.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
500
VGS=10V, ID=20A
TO220
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VGS=10V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
µA
5
IGSS
Units
V
1
TJ=55°C
RDS(ON)
Max
40
VDS=40V, VGS=0V
VGS(th)
Coss
Typ
100
nA
3.1
3.7
V
3.6
4.2
6
7
3.3
55
3.9
mΩ
S
0.7
1
V
220
A
A
mΩ
2840
3568
4300
pF
960
1388
1810
pF
85
151
215
pF
1.5
3.1
4.7
Ω
55
71
86
nC
VGS=10V, VDS=20V, ID=20A
Qgs
Gate Source Charge
15
nC
Qgd
Gate Drain Charge
23
nC
tD(on)
Turn-On DelayTime
16
ns
tr
Turn-On Rise Time
30
ns
tD(off)
Turn-Off DelayTime
54
ns
tf
Turn-Off Fall Time
20
ns
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
35
45
55
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
225
287
350
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C. Maximum UIS current limited by test equipment.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package is 120A.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev1: May 2011
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Page 2 of 6
AOT1404L/AOB1404L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
VDS=5V
10V
80
80
5.5V
5V
60
ID (A)
ID (A)
60
40
40
4.5V
20
20
125°C
VGS=4V
0
0
0
1
2
3
4
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
0
1
2
3
4
5
VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
6
2.2
Normalized On-Resistance
8
6
RDS(ON) (mΩ
Ω)
25°C
VGS=10V
4
2
0
2.0
1.8
VGS=10V
ID=20A
17
5
2
10
1.6
1.4
1.2
1.0
0.8
0
5
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
0
25
50
75
100
125
150
175
0
200
Temperature (°C)
18
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
10
1.0E+02
ID=20A
1.0E+01
8
40
6
125°C
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
4
25°C
125°C
1.0E-01
25°C
1.0E-02
1.0E-03
2
1.0E-04
1.0E-05
0
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev1: May 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT1404L/AOB1404L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
9000
VDS=20V
ID=20A
7500
Capacitance (pF)
VGS (Volts)
8
6
4
2
6000
4500
Ciss
3000
Coss
1500
Crss
0
0
0
15
30
45
60
Qg (nC)
Figure 7: Gate-Charge Characteristics
75
0
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
10µs
RDS(ON)
limited
100µs
DC
10.0
1ms
10ms
1.0
TJ(Max)=175°C
TC=25°C
7500
10µs
Power (W)
100.0
6000
17
5
2
10
4500
3000
TJ(Max)=175°C
TC=25°C
0.1
1500
0.0
0
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area (Note F)
10
Zθ JC Normalized Transient
Thermal Resistance
40
9000
1000.0
ID (Amps)
10
0.0001
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=0.36°C/W
40
1
PD
0.1
Single Pulse
Ton
T
0.01
0.000001
Rev1: May 2011
0.00001
0.0001
0.001
0.01
0.1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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1
10
Page 4 of 6
AOT1404L/AOB1404L
250
500
200
400
Power Dissipation (W)
IAR (A) Peak Avalanche Current
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
TA=25°C
150
TA=150°C
100
TA=100°C
TA=125°C
300
200
100
50
0
0
1
0
10
100
1000
10000
Time in avalanche, tA (ms)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
150
125
TCASE (°°C)
Figure 13: Power De-rating (Note F)
10000
300
TA=25°C
250
1000
200
Power (W)
Current rating ID(A)
175
150
17
5
2
10
100
100
10
50
0
1
0
25
50
75
100
125
150
TCASE (°°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
175
01000
0.1
10
Pulse Width (s)
18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.00001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=60°C/W
1
0.001
40
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
Rev1: May 2011
0.1
1
10
100
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
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1000
Page 5 of 6
AOT1404L/AOB1404L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev1: May 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6