AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET General Description The AOT1608L/AOB1608L uses a robust technology that is designed to provide efficient and reliable power conversion even in the most demanding applications, including motor control. With low RDS(ON) and excellent thermal capability this device is appropriate for high current switching and can endure adverse operating conditions. Features VDS 60V ID (at VGS=10V) 140A RDS(ON) (at VGS=10V) < 7.6mΩ TO-263 D2PAK TO220 D D D G S D G G S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current A 11 A 9 Avalanche Current C IAS, IAR 113 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 638 mJ Power Dissipation B Junction and Storage Temperature Range 2.1 Steady-State Steady-State RθJA RθJC W 1.3 TJ, TSTG Symbol t ≤ 10s W 166 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 333 PD TC=100°C TA=25°C Power Dissipation A 1/6 V 256 IDSM TA=70°C ±20 100 IDM TA=25°C Units V 140 ID TC=100°C Maximum 60 -55 to 175 Typ 12 48 0.35 °C Max 15 60 0.45 Units °C/W °C/W °C/W www.freescale.net.cn AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V 60 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µΑ 2.5 ID(ON) On state drain current VGS=10V, VDS=5V 256 TJ=55°C 5 VGS=10V, ID=20A TO220 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VGS=10V, ID=20A TO263 VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Units V 1 Zero Gate Voltage Drain Current Output Capacitance Max VDS=60V, VGS=0V IDSS Coss Typ µA 100 nA 3.1 3.7 V 6.6 7.6 11.4 13.2 6.3 51 7.3 mΩ S 0.7 A mΩ 1 V 140 A 2450 3069 3690 pF 500 721 945 pF 30 56 80 pF 1.5 2.9 4.4 Ω 54 69 84 nC VGS=10V, VDS=30V, ID=20A Qgs Gate Source Charge 15 nC Qgd Gate Drain Charge 21 nC tD(on) Turn-On DelayTime 18 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω 25 ns 47 ns 11 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 28 40 52 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 245 355 465 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package is 120A. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. 2/6 www.freescale.net.cn AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 VDS=5V 10V 80 80 5.5V 60 ID (A) ID (A) 60 5V 40 20 20 VGS=4.5V 125°C 0 25°C 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 0 1 2 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) 6 2.4 Normalized On-Resistance 10 8 RDS(ON) (mΩ Ω) 40 VGS=10V 6 4 2 2.2 2.0 VGS=10V ID=20A 1.8 17 5 2 10 1.6 1.4 1.2 1.0 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 0 25 50 75 100 125 150 175 200 0 Temperature (°C) 18 Figure 4: On-Resistance vs. Junction Temperature (Note E) 1E+02 18 ID=20A 1E+01 15 40 125°C 12 IS (A) RDS(ON) (mΩ Ω) 1E+00 125°C 1E-01 25°C 1E-02 9 1E-03 6 25°C 1E-04 3 1E-05 2 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 3/6 4 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.freescale.net.cn AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 7000 10 Capacitance (pF) VGS (Volts) 6000 VDS=30V ID=20A 8 6 4 5000 4000 Ciss 3000 2000 Coss 2 1000 Crss 0 0 0 15 30 45 60 Qg (nC) Figure 7: Gate-Charge Characteristics 0 75 1000.0 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 9000 10µs RDS(ON) limited 100µs DC 10.0 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C 7500 10µs Power (W) 100.0 ID (Amps) 10 6000 17 5 2 10 4500 3000 TJ(Max)=175°C TC=25°C 0.1 1500 0 0.0 0.01 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.0001 0.001 0.01 0.1 1 0 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to18 Case (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W 40 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 4/6 0.0001 0.001 0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 1 10 www.freescale.net.cn AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET 200 500 160 400 Power Dissipation (W) IAR (A) Peak Avalanche Current TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TA=25°C 120 TA=150°C TA=100°C 80 TA=125°C 40 200 100 0 0 1 0 10 100 1000 10000 Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 125 TCASE (°°C) Figure 13: Power De-rating (Note F) 175 10000 200 TA=25°C 160 1000 Power (W) Current rating ID(A) 300 120 80 17 5 2 10 100 10 40 0 1 0 25 50 75 100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F) 175 1 100 0 10000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 0.0001 0.01 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.01 5/6 0.1 1 10 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) 100 1000 www.freescale.net.cn AOT1608L/AOB1608L 60V N-Channel Rugged Planar MOSFET Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig 6/6 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.freescale.net.cn