AOTF286L 80V N-Channel MOSFET General Description Product Summary VDS • Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Applications ID (at VGS=10V) 80V 56A RDS(ON) (at VGS=10V) < 6mΩ RDS(ON) (at VGS=6V) < 8mΩ 100% UIS Tested 100% Rg Tested • Synchronous Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications TO220F Top View Bottom View G D D G S S D G S Orderable Part Number Package Type Form Minimum Order Quantity AOTF286L TO-220F Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.1mH C 10µs TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Rev.1.0: January 2015 IAS 50 A EAS 125 mJ 96 V 37.5 2.2 Steady-State W 1.4 TJ, TSTG Symbol Steady-State W 18.5 PDSM t ≤ 10s A 10.5 PD Junction and Storage Temperature Range A 13.5 VSPIKE TA=25°C V 225 IDSM TA=70°C ±20 39 IDM TA=25°C Continuous Drain Current Units V 56 ID TC=100°C C Maximum 80 RθJA RθJC -55 to 175 Typ 10 45 3.3 www.aosmd.com °C Max 15 55 4.0 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 2.3 TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=40V, f=1MHz f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr V VGS=10V, VDS=40V, ID=20A µA 5 VGS=10V, ID=20A VDS=5V, ID=20A Units 1 TJ=55°C Static Drain-Source On-Resistance Max 80 VDS=80V, VGS=0V IDSS RDS(ON) Typ 0.6 ±100 nA 2.7 3.3 V 5.0 6.0 8.1 9.8 6.4 8.0 mΩ 1 V 40 A 60 0.7 mΩ S 3142 pF 435 pF 43 pF 1.3 2.0 Ω 44.5 63 nC 12 nC 8 nC 13.5 ns 11 ns 32 ns 11 ns IF=20A, dI/dt=500A/µs 29 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 161 ns nC Body Diode Reverse Recovery Time VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: January 2015 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V 100 5V VDS=5V 80 80 6V 60 60 ID(A) ID (A) 4.5V 40 125°C 40 25°C 20 20 VGS=4V 0 0 0 1 2 3 4 1 5 2 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance 2.2 8 VGS=6V RDS(ON) (mΩ) 3 6 4 VGS=10V 2 2 VGS=10V ID=20A 1.8 1.6 1.4 VGS=6V ID=20A 1.2 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 15 1.0E+02 ID=20A 1.0E+01 12 9 IS (A) RDS(ON) (mΩ) 125°C 1.0E+00 125°C 1.0E-01 25°C 1.0E-02 6 1.0E-03 25°C 3 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: January 2015 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 4500 VDS=40V ID=20A 4000 Ciss 3500 Capacitance (pF) VGS (Volts) 8 6 4 3000 2500 2000 1500 1000 2 Coss 500 0 Crss 0 0 10 20 30 40 50 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 70 80 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 TJ(Max)=175°C TC=25°C 10µs 10µs 100.0 RDS(ON) limited 400 100µs 10.0 Power (W) ID (Amps) 20 1ms 10ms 1.0 0.0 0.01 200 DC TJ(Max)=175°C TC=25°C 0.1 300 100 0.1 1 10 100 1000 VDS (Volts) VGS> or equal to 6V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=4.0°C/W 1 PDM 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: January 2015 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=25°C 100 TA=100°C TA=150°C TA=125°C 40 30 20 10 0 10 1 10 100 0 1000 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C) 10000 80 TA=25°C 1000 Power (W) Current rating ID(A) 60 40 100 10 20 0 0 25 50 75 100 125 150 175 1 1E-05 ZθJA Normalized Transient Thermal Resistance TCASE (°C) Figure 14: Current De-rating (Note F) 0.001 0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=55°C/W 0.1 PDM 0.01 Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: January 2015 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: January 2015 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6