Datasheet

AOT2918L/AOB2918L/AOTF2918L
100V N-Channel MOSFET
General Description
Product Summary
The AOT2918L & AOB2918L & AOTF2918L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss.
In addition, switching behavior is well controlled with a
soft recovery body diode.This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
ID (at VGS=10V)
100V
90A
RDS(ON) (at VGS=10V)
< 7mΩ
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
AOT2918L
D
S
G
AOTF2918L
D
S
S
AOB2918L
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT2918L/AOB2918L
Symbol
Drain-Source Voltage
VDS
100
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
V
45
A
260
13
IDSM
TA=70°C
Units
V
58
70
IDM
TA=25°C
AOTF2918L
±20
90
ID
TC=100°C
C
S
G
A
10
Avalanche Current C
IAS, IAR
35
A
Avalanche energy L=0.1mH C
EAS, EAR
61
mJ
VDS Spike
VSPIKE
10µs
TC=25°C
Power Dissipation B
PD
TC=100°C
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev.3.0: June 2016
133
20
2.1
Steady-State
Steady-State
RθJA
RθJC
°C
-55 to 175
AOT2918L/AOB2918L
15
60
0.56
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W
W
1.33
TJ, TSTG
Symbol
t ≤ 10s
V
41
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
110
267
AOTF2918L
15
60
3.6
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT2918L/AOB2918L/AOTF2918L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
Conditions
Min
ID=250µA, VGS=0V
100
Typ
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
2.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
260
TJ=55°C
VGS=10V, ID=20A
100
nA
3.3
3.9
V
5.6
7
9
12
A
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VDS=5V, ID=20A
34
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current G
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
VGS=10V, VDS=50V, ID=20A
µA
5
RDS(ON)
Output Capacitance
Units
V
VDS=100V, VGS=0V
IDSS
Coss
Max
mΩ
S
1
V
90
A
2580
3430
pF
1530
2035
pF
37
63
pF
1.5
2.3
Ω
38
53
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
12
tD(on)
Turn-On DelayTime
17
38
ns
tr
Turn-On Rise Time
24
53
ns
VGS=10V, VDS=50V, RL=2.5Ω,
RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
12
nC
nC
30
66
ns
24
53
ns
46
65
230
320
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: June 2016
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Page 2 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
10V
VDS=5V
7V
80
80
6V
60
ID(A)
ID (A)
60
40
40
20
20
125°C
VGS=5V
25°C
0
0
0
1
2
3
4
2
5
4
5
6
7
8
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
10
Normalized On-Resistance
2
8
RDS(ON) (mΩ)
3
VGS=10V
6
4
2
1.8
VGS=10V
ID=20A
1.6
17
5
2
10
1.4
1.2
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
Temperature (°C) 0
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
20
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
12
IS (A)
RDS(ON) (mΩ)
16
125°C
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
8
1.0E-04
25°C
1.0E-05
4
5
6
7
8
9
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.3.0: June 2016
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=50V
ID=20A
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
3000
Ciss
2000
Coss
1000
Crss
0
0
0
5
10
15
20
25
30
35
40
0
40
60
80
100
1000
1000.0
RDS(ON)
limited
10µs
100µs
10µs
900
1ms
700
10.0
10ms
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
TJ(Max)=175°C
TC=25°C
800
Power (W)
100.0
ID (Amps)
20
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
17
5
2
10
600
500
400
300
0.0
0.01
0.1
1
10
100
1000
200
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT2918L and AOB2918L (Note F)
for AOT2918L and AOB2918L (Note F)
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=0.56°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2918L and AOB2918L (Note F)
Rev.3.0: June 2016
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Page 4 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
1000.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
600
100µs
10.0
Power (W)
ID (Amps)
100.0
1ms
10ms
1.0
DC
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
1
400
200
10
100
0
0.001
1000
VDS (Volts)
0.01
0.1
1
10
17
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-Case
5
for AOTF2918L (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area for AOTF2918L
2
10
ZθJC Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=3.6°C/W
1
0
18
0.1
PD
Single Pulse
0.01
0.00001
0.0001
0.001
Ton
0.01
40
0.1
T
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOTF2918L (Note F)
Rev.3.0: June 2016
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Page 5 of 7
AOT2918L/AOB2918L/AOTF2918L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
IAR (A) Peak Avalanche Current
300
Power Dissipation (W)
TA=25°C
TA=100°C
TA=150°C
TA=125°C
250
200
150
100
50
10
0
1
10
100
0
Time in avalanche, tA (µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
25
50
75
100
125
150
175
TCASE (°C)
Figure 13: Power De-rating (Note F)
10000
100
TA=25°C
1000
Power (W)
Current rating ID(A)
80
60
40
17
5
2
10
100
10
20
0
0
25
50
75
100
125
150
1
0.00001
175
0.001
0.1
10
0
1000
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
TCASE (°C)
Figure 14: Current De-rating (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
0.001
0.001
0.01
0.1
Ton
1
10
T
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.3.0: June 2016
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Page 6 of 7
AOT2918L/AOB2918L/AOTF2918L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.3.0: June 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7