AOT14N50FD/AOTF14N50FD 500V, 14A N-Channel MOSFET General Description Product Summary The AOT14N50FD/AOTF14N50FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. VDS ID (at VGS=10V) 600V@150℃ 14A RDS(ON) (at VGS=10V) < 0.47Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOT14N50FDL & AOTF14N50FDL Top View TO-220F TO-220 D G G AOT14N50FD D S AOTF14N50FD G D S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOT14N50FD AOTF14N50FD Drain-Source Voltage 500 VDS Gate-Source Voltage Continuous Drain Current ±30 VGS TC=25°C TC=100°C V 14 ID Units V 14* 9.6 9.6* A Pulsed Drain Current C IDM Avalanche Current C IAR 5 A Repetitive avalanche energy C EAR 375 mJ Single pulsed avalanche energy G Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D EAS dv/dt 750 5 mJ V/ns W 56 PD 50 0.4 TJ, TSTG -55 to 150 W/ oC °C 300 °C TL Symbol RθJA RθCS AOT14N50FD 65 AOTF14N50FD 65 Units °C/W 0.5 0.45 -2.5 °C/W °C/W Maximum Case-to-sink A Maximum Junction-to-Case RθJC * Drain current limited by maximum junction temperature. Rev3: Jul 2011 278 2.2 www.aosmd.com Page 1 of 6 AOT14N50FD/AOTF14N50FD Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=10mA, VGS=0V, TJ=25°C 500 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=10mA, VGS=0V, TJ=150°C 600 V ID=10mA, VGS=0V 0.57 V/ oC VDS=500V, VGS=0V 10 VDS=400V, TJ=125°C 100 IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 2.4 3 4 nΑ V 0.47 Ω RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=7A 0.37 gFS Forward Transconductance VDS=40V, ID=7A 15 VSD Diode Forward Voltage IS=14A,VGS=0V 1.3 IS ISM S 1.6 V Maximum Body-Diode Continuous Current 14 A Maximum Body-Diode Pulsed Current 56 A DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg µA Gate resistance VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time VGS=10V, VDS=400V, ID=14A VGS=10V, VDS=250V, ID=14A, RG=25Ω 1300 1654 2010 pF 120 179 235 pF 8 14.5 21 pF 1.7 3.4 5.1 Ω 30 38.8 47 nC 8.7 nC 17.5 nC 32 ns 94 ns 104 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=14A,dI/dt=100A/µs,VDS=100V 90 145 Qrr Body Diode Reverse Recovery Charge IF=14A,dI/dt=100A/µs,VDS=100V 0.3 0.5 78 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=5A, VDD=150V, RG=25Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Jul 2011 www.aosmd.com Page 2 of 6 AOT14N50FD/AOTF14N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 100 10V 25 20 10 6V 125°C ID(A) ID (A) -55°C VDS=40V 6.5V 15 10 1 VGS=5.5V 25°C 5 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Fig 1: On-Region Characteristics 1.0 Normalized On-Resistance RDS(ON) (Ω) 8 10 3 0.8 0.6 0.4 VGS=10V 0.2 2.5 0 5 10 15 20 25 VGS=10V ID=7A 2 1.5 1 0.5 0.0 0 -100 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 1.2 1.0E+01 1.1 125°C 1.0E+00 IS (A) BVDSS (Normalized) 6 VGS(Volts) Figure 2: Transfer Characteristics 1 1.0E-01 1.0E-02 25°C 1.0E-03 0.9 1.0E-04 0.8 -100 1.0E-05 -50 0 50 100 150 200 TJ (°C) Figure 5: Break Down vs. Junction Temperature Rev 3: Jul 2011 www.aosmd.com 0.0 0.4 0.8 1.2 1.6 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOT14N50FD/AOTF14N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 Ciss VGS (Volts) 12 Capacitance (pF) VDS=400V ID=14A 9 6 1000 Coss 100 Crss 10 3 1 0 0 10 20 30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 60 100 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 100 10µs RDS(ON) limited 10 1ms 1 10ms DC 0.1s 10µs RDS(ON) limited 10 100µs ID (Amps) ID (Amps) 1 100µs 1ms 1 10ms DC 0.1s 1s 0.1 0.1 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TC=25°C 0.01 0.01 1 10 100 1000 1 10 100 1000 VDS (Volts) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT14N50FD (Note F) Figure 10: Maximum Forward Biased Safe Operating Area for AOTF14N50FD (Note F) Current rating ID(A) 15 12 9 6 3 0 0 25 50 75 100 125 150 TCASE (°C) Figure 11: Current De-rating (Note B) Rev 3: Jul 2011 www.aosmd.com Page 4 of 6 AOT14N50FD/AOTF14N50FD TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.45°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse PD 0.1 Ton 0.01 T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance for AOT14N50FD (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 13: Normalized Maximum Transient Thermal Impedance for AOTF14N50FD (Note F) 15 AOT(F)14N50FD 10 VDS=100V IF=14A dI/dt=100A/µs IF (A) 5 0 -5 -10 -15 -20 -600 Rev 3: Jul 2011 AOT(F)14N50 -300 0 300 Trr (nS) Figure 14: Diode Recovery Characteristics www.aosmd.com 600 900 1200 Page 5 of 6 AOT14N50FD/AOTF14N50FD Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 3: Jul 2011 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com Page 6 of 6