Datasheet

AOT240L/AOB240L/AOTF240L
40V N-Channel MOSFET
General Description
Product Summary
The AOT240L & AOB240L & AOTF240L uses Trench
MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance.
Power losses are minimized due to an extremely low
combination of RDS(ON) and Crss.
VDS
ID (at VGS=10V)
40V
105A/85A
RDS(ON) (at VGS=10V)
< 2.9mΩ (< 2.6mΩ∗)
RDS(ON) (at VGS=4.5V)
< 3.7mΩ (< 3.5mΩ∗)
100% UIS Tested
100% Rg Tested
Top View
TO-220
TO-263
D2PAK
TO-220F
D
D
G
G
AOT240L
D
S
AOTF240L
G
D
S
S
AOB240L
S
G
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AOT240L
AOB240L
AOTF240L
TO-220
TO-263
TO-220F
Tube
Tape & Reel
Tube
1000
800
1000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
AOT240L/AOB240L
Symbol
Drain-Source Voltage
40
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Rev.3.0: November 2013
IAS
68
A
EAS
231
mJ
176
41
88
20
1.9
TJ, TSTG
Steady-State
Steady-State
RθJA
RθJC
-55 to 175
AOT240L/AOB240L
15
65
0.85
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W
W
1.2
Symbol
t ≤ 10s
A
A
16
PDSM
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
* Surface mount package TO263
60
20
PD
TA=25°C
V
400
IDSM
TA=70°C
Units
V
85
82
IDM
TA=25°C
Continuous Drain
Current
±20
105
ID
TC=100°C
AOTF240L
°C
AOTF240L
15
65
3.6
Units
°C/W
°C/W
°C/W
Page 1 of 7
AOT240L/AOB240L/AOTF240L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS
Drain-Source Breakdown Voltage
BVDSS
IDSS
Zero Gate Voltage Drain Current
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
1
TJ=125°C
TO220/TO220F
VGS=10V, ID=20A
Static Drain-Source On-Resistance
TO263
VGS=4.5V, ID=20A
gFS
Forward Transconductance
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current G
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
1.7
2.2
V
2.4
2.9
3.7
4.7
3
3.7
mΩ
2.1
2.6
mΩ
2.7
3.5
mΩ
A
78
0.65
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Output Capacitance
µA
400
VGS=4.5V, ID=20A
Coss
V
5
VGS=10V, ID=20A
TO220/TO220F
Units
1
TJ=55°C
IGSS
Max
40
VDS=40V, VGS=0V
VGS(th)
RDS(ON)
Typ
S
1
V
105
A
3510
VGS=0V, VDS=20V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
0.5
mΩ
pF
1070
pF
68
pF
1
1.5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
49
72
nC
Qg(4.5V) Total Gate Charge
22
32
nC
VGS=10V, VDS=20V, ID=20A
Qgs
Gate Source Charge
9
nC
Qgd
Gate Drain Charge
7
nC
tD(on)
Turn-On DelayTime
11
ns
tr
Turn-On Rise Time
10
ns
tD(off)
Turn-Off DelayTime
38
ns
tf
Turn-Off Fall Time
11
ns
ns
nC
VGS=10V, VDS=20V, RL=1Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
21
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
58
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application
depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink,
assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current limited by package.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.3.0: November 2013
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Page 2 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
3.5V
VDS=5V
7V
80
3V
80
10V
60
ID(A)
ID (A)
60
125°C
40
40
20
20
25°C
Vgs=2.5V
0
0
0
1
2
3
4
1
5
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
2
2.5
3
3.5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
4
Normalized On-Resistance
2
6
RDS(ON) (mΩ
Ω)
1.5
VGS=4.5V
4
2
VGS=10V
1.8
VGS=10V
ID=20A
1.6
17
5
2
VGS=4.5V
10
1.4
1.2
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
8
1.0E+02
ID=20A
1.0E+01
40
1.0E+00
125°C
IS (A)
RDS(ON) (mΩ
Ω)
6
4
125°C
1.0E-01
1.0E-02
25°C
1.0E-03
2
25°C
1.0E-04
1.0E-05
0
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.3.0: November 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
5000
VDS=20V
ID=20A
Ciss
4000
Capacitance (pF)
VGS (Volts)
8
6
4
2
3000
2000
Coss
1000
Crss
0
0
0
10
20
30
40
Qg (nC)
Figure 7: Gate-Charge Characteristics
50
0
10
20
30
VDS (Volts)
Figure 8: Capacitance Characteristics
600
1000.0
TJ(Max)=175°C
TC=25°C
10µs
RDS(ON)
limited
10µs
500
100µs
1ms
10ms
10.0
DC
1.0
TJ(Max)=175°C
TC=25°C
0.1
Power (W)
ID (Amps)
100.0
40
17
5
2
10
400
300
200
0.0
100
0.01
0.1
1
10
100
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating
Area for AOT240L and AOB240L (Note F)
0.001
0.01
0.1
1
10
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
for AOT240L and AOB240L (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.85°C/W
1
PD
0.1
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance for AOT240L and AOB240L (Note F)
Rev.3.0: November 2013
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Page 4 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
1000.0
10µs
RDS(ON)
100.0
TJ(Max)=175°C
TC=25°C
500
10.0
1.0
DC
TJ(Max)=175°C
TC=25°C
0.1
Power (W)
ID (Amps)
100µs
1ms
10ms
400
300
200
100
0.0
0
0.01
0.1
1
VDS (Volts)
10
100
0.001
0.01
0.1
1
10
100
1000
17
Pulse Width (s)
Figure 13: Single Pulse Power Rating Junction-to-Case
5
for AOTF240L (Note F)
Figure 12: Maximum Forward Biased
Safe Operating Area for AOTF240L
2
10
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.6°C/W
1
0
18
0.1
PD
Single Pulse
Ton
0.01
1E-05
T
40
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Normalized Maximum Transient Thermal Impedance for AOTF240L (Note F)
Rev.3.0: November 2013
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Page 5 of 7
AOT240L/AOB240L/AOTF240L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
200
TA=25°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
100
TA=150°C
TA=125°C
10
150
100
50
0
1
10
100
1000
Time in avalanche, tA (µ
µs)
Figure 15: Single Pulse Avalanche capability
(Note C)
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 16: Power De-rating (Note F)
175
1000
120
TA=25°C
80
100
Power (W)
Current rating ID(A)
100
60
40
17
5
2
10
10
20
0
1
0
25
50
75
100
125
150
TCASE (°
°C)
Figure 17: Current De-rating (Note F)
175
0.001
0.1
10 0
1000
18
Pulse Width (s)
Figure 18: Single Pulse Power Rating Junction-toAmbient (Note H)
1E-05
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=65°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 19: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.3.0: November 2013
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Page 6 of 7
AOT240L/AOB240L/AOTF240L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev.3.0: November 2013
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 7 of 7