AOT284L/AOB284L

AOT284L/AOB284L
80V N-Channel MOSFET
General Description
Product Summary
The AOT284L & AOB284L uses trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Both
conduction and switching power losses are minimized due
to an extremely low combination of RDS(ON), Ciss and Coss.
This device is ideal for boost converters and synchronous
rectifiers for consumer, telecom, industrial power supplies
and LED backlighting.
VDS
ID (at VGS=10V)
80V
105A
RDS(ON) (at VGS=10V)
< 4.5mΩ
(< 4.3mΩ )
RDS(ON) (at VGS=6V)
< 5.7mΩ
(< 5.5mΩ ∗)
100% UIS Tested
100% Rg Tested
TO-263
D2PAK
TO220
Top View
∗
Bottom View
Top View
D
Bottom View
D
D
D
D
G
G
D
S
S
D
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C
TC=25°C
Power Dissipation B
TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
Steady-State
Steady-State
A
A
IAS
65
A
EAS
211
mJ
250
W
125
2.1
RθJA
RθJC
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
V
16
PDSM
TA=70°C
±20
12.5
PD
TC=100°C
Units
V
400
IDSM
TA=70°C
Maximum
80
82
IDM
TA=25°C
Continuous Drain
Current
S
S
105
ID
TC=100°C
G
G
-55 to 175
Typ
12
48
0.45
°C
Max
15
60
0.6
Units
°C/W
°C/W
°C/W
* Surface mount package TO263
Rev 0 : Oct. 2012
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Page 1 of 6
AOT284L/AOB284L
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
80
V
VDS=80V, VGS=0V
1
TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
2.3
ID(ON)
On state drain current
VGS=10V, VDS=5V
400
Units
±100
nA
2.8
3.3
V
3.6
4.5
5.8
7.2
VGS=6V, ID=20A
TO220
4.4
5.7
VGS=10V, ID=20A
TO263
3.4
4.3
4.2
80
5.5
Forward Transconductance
VGS=6V, ID=20A
TO263
VDS=5V, ID=20A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.69
IS
Maximum Body-Diode Continuous Current G
VGS=10V, ID=20A
TO220
RDS(ON)
gFS
Static Drain-Source On-Resistance
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=40V, f=1MHz
A
S
1
V
105
A
5154
pF
673
pF
48
VGS=0V, VDS=0V, f=1MHz
pF
Ω
0.8
1.2
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
71
100
nC
Qg(4.5V) Total Gate Charge
33.5
48
nC
VGS=10V, VDS=40V, ID=20A
0.4
mΩ
Qgs
Gate Source Charge
18.5
nC
Qgd
Gate Drain Charge
11.5
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
11
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=40V, RL=2Ω,
RGEN=3Ω
38
ns
9
ns
IF=20A, dI/dt=500A/µs
38
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
230
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends
on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep
initial TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0 : Oct. 2012
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Page 2 of 6
AOT284L/AOB284L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
100
5V
80
VDS=5V
80
10V
4.5V
60
ID(A)
ID (A)
60
40
40
125°C
20
20
25°C
VGS=4.0V
0
0
0
1
2
3
4
1
5
3
4
5
6
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
8
Normalized On-Resistance
2.2
6
RDS(ON) (mΩ
Ω)
2
VGS=6V
4
VGS=10V
2
2
VGS=10V
ID=20A
1.8
17
5
2
VGS=6V 10
1.6
1.4
1.2
ID=20A
1
0.8
0
0
5
0
10
15
20
25
30
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
1.0E+02
10
ID=20A
1.0E+01
8
40
1.0E+00
IS (A)
RDS(ON) (mΩ
Ω)
125°C
6
1.0E-01
125°C
1.0E-02
4
25°C
1.0E-03
25°C
2
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0 : Oct. 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOT284L/AOB284L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
6000
VDS=40V
ID=20A
5000
Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
4000
Coss
3000
2000
1000
0
Crss
0
0
20
40
60
80
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
30
40
50
60
70
VDS (Volts)
Figure 8: Capacitance Characteristics
80
600
1000.0
10µs
10µs
RDS(ON)
limited
10.0
DC
1.0
500
1ms
10ms
TJ(Max)=175°C
TC=25°C
0.1
0.0
0.01
0.1
TJ(Max)=175°C
TC=25°C
100µs
Power (W)
100.0
ID (Amps)
10
17
5
2
10
400
300
200
1
10
100
1000
100
0.001
0.01
0.1
1
10
100
1000
0
Pulse Width (s)
18
Figure 10: Single Pulse Power Rating Junction-to-Case
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
(Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJC=0.6°C/W
1
0.1
PD
Single Pulse
0.01
1E-05
0.0001
Ton
0.001
0.01
T
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0 : Oct. 2012
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Page 4 of 6
AOT284L/AOB284L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
300
TA=25°C
100
Power Dissipation (W)
IAR (A) Peak Avalanche Current
1000
TA=100°C
TA=150°C
TA=125°C
250
200
150
100
50
10
0
1
10
100
1000
0
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability (Note
C)
25
50
75
100
125
150
175
TCASE (°
°C)
Figure 13: Power De-rating (Note F)
1000
120
Power (W)
Current rating ID(A)
TA=25°C
90
60
100
17
5
2
10
10
30
1
0.001
0
0
25
50
75
100
125
150
0.1
10
175
TCASE (°
°C)
Figure 14: Current De-rating (Note F)
1000
0
18
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
0.001
0.01
0.1
1
Ton
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0 : Oct. 2012
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Page 5 of 6
AOT284L/AOB284L
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0 : Oct. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6