UNISONIC TECHNOLOGIES CO., LTD UF4N20Z Power MOSFET 4A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF4N20Z is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON) < 2Ω @ VGS=10V, ID=4A * High switching speed * Typically 3.2nC low gate charge * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF4N20ZG-AA3-R UF4N20ZL-TA3-R UF4N20ZG-TA3-R UF4N20ZL-TN3-R UF4N20ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-220 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Reel Tube Tape Reel MARKING SOT-223 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-220 / TO-252 1 of 3 QW-R502-753.F UF4N20Z Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Avalanche Current RATINGS UNIT 200 V ±20 V 4 A 4 A Single Pulsed 52 mJ Avalanche Energy Repetitive 52 mJ SOT-223 0.8 Power Dissipation TO-220 PD 40 W TO-252 1.14 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. SYMBOL VDSS VGSS ID IAR EAS EAR ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VDS=0V Drain-Source Leakage Current IDSS VDS=200V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A On State Drain Current ID(ON) VGS=10V, VDS=10V, f=1MHz DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, ID=4A, IG=100µA, Gate to Source Charge QGS VGS=10V Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=4A, RG=25Ω, VGS=0~10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=4A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 200 2 0 1 10 -10 V µA µA µA 4 2 30 V Ω A 850 250 200 pF pF pF 3.2 0.64 1.6 6 38 11 13 0.1 nC nC nC ns ns ns ns 4 16 1.48 A A V 2 of 3 QW-R502-753.F UF4N20Z TYPICAL CHARACTERISTICS 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 200 200 150 150 100 100 50 50 0 0 0 0 50 150 200 250 100 Drain-Source Breakdown Voltage, BVDSS (V) 0.7 4.2 1.4 2.1 2.8 3.5 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-753.E