Datasheet

UNISONIC TECHNOLOGIES CO., LTD
7N10Z
Power MOSFET
7A, 100V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 7N10Z is an N-Channel enhancement mode power
MOSFET providing customers with excellent switching performance
and minimum on-state resistance. The UTC 7N10Z uses planar
stripe and DMOS technology to provide perfect quality. This device
can also withstand high energy pulse in the avalanche and the
commutation mode.
The UTC 7N10Z is generally applied in low voltage applications,
such as DC motor controls, audio amplifiers and high efficiency
switching DC/DC converters.

FEATURES
* RDS(ON) < 0.35Ω @ VGS =10V, ID =3.5A
* Fast Switching
* Improved dv/dt Capability

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
7N10ZL-TN3-R
7N10ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-252
Pin Assignment
1
2
3
G
D
S
Packing
Tape Reel
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7N10Z

Power MOSFET
MARKING
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7N10Z

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain -Source Voltage
VDSS
100
V
Gate-Source Voltage
VGSS
±20
V
Continuous Drain Current TC =25°C
ID
7
A
Pulsed Drain Current (Note 2)
IDM
28
A
Single Pulsed Avalanche Energy (Note 3)
EAS
50
mJ
Power Dissipation
2.5
W
PD
Derate above 25°C
0.02
W/°C
Operating Junction Temperature
TJ
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L =26mH, IAS =7A, VDD =25V, RG =25Ω Starting TJ =25°C

THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Junction to Ambient
θJA
50
Note: When mounted on the minimum pad size recommended (PCB Mount)

UNIT
°C/W
ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BVDSS
VGS =0V, ID =250µA
Drain-Source Leakage Current
IDSS
VDS =100V, VGS =0V
Gate-Source Leakage Current
IGSS
VGS =±20V, VDS =0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID =250µA
Static Drain-Source On-Resistance
RDS(ON)
VGS =10V, ID =3.5A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS =25V, VGS=0V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=10V, VDS=50V, ID=1.3A
Gate Source Charge
QGS
(Note 1,2)
Gate Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Turn-ON Rise Time
tR
VDD=30V, ID=0.5A, RG=25Ω
(Note 1,2)
Turn-OFF Delay Time
tD(OFF)
Turn-OFF Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
IS =7A, VGS =0V
Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
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MIN TYP MAX UNIT
100
2.0
1
±10
V
µA
µA
4.0
0.145 0.35
V
Ω
420
80
11
9.5
1
2.5
33
35
94
35
450
100
15
pF
pF
pF
40
42
116
40
nC
nC
nC
ns
ns
ns
ns
7
A
28
A
1.5
V
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7N10Z

Power MOSFET
TEST CIRCUITS AND WAVEFORMS
Peak Diode Recovery dv/dt Test Circuit & Waveforms
+
DUT
VDS
RG
L
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
VGS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)

VGS
Same Type
as DUT
12V
QG
10V
200nF
50kΩ
VDS
300nF
QGS
QGD
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
2
EAS= 1
2 LIAS
VDS
RG
BVDSS
BVDSS-VDD
BVDSS
ID
L
IAS
10V
ID(t)
DUT
tP
VDD
VDD
VDS(t)
tP
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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Power MOSFET
TYPICAL CHARACTERISTICS
Drain Current, ID (µA)
Drain Current, ID (µA)

Drain-Source On-State Resistance
Characteristics
it
3.5
2.5
2
1.5
1
D
S(
O
N
R
3
)L
10
Drain current, ID (A)
Drain Current, ID (A)
100
VGS=10V, ID=3.5A
im
4
Maximum Safe Operation Area
10µs
1
100µs
1ms
10ms
0.1
100ms
0.5
0
0.01
0
0.8
0.2
0.4
0.6
Drain to Source Voltage, VDS (V)
TA=25ºC
0.1
DC
1
10
60
Drain-Source Voltage, VDS (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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