UNISONIC TECHNOLOGIES CO., LTD 4N60K-MTQ Preliminary Power MOSFET 4.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 2.5Ω @ VGS = 10 V, ID = 2.2 A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, high Ruggedness SYMBOL www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-128.b 4N60K-MTQ Preliminary ORDERING INFORMATION Ordering Number Lead Free Halogen Free 4N60KL-TA3-T 4N60KG-TA3-T 4N60KL-TF3-T 4N60KG-TF3-T 4N60KL-TF1-T 4N60KG-TF1-T 4N60KL-TF2-T 4N60KG-TF2-T 4N60KL-TF3T-T 4N60KG-TF3T-T 4N60KL-TM3-T 4N60KG-TM3-T 4N60KL-TMS-T 4N60KG-TMS-T 4N60KL-TMS2-T 4N60KG-TMS2-T 4N60KL-TMS4-T 4N60KG-TMS4-T 4N60KL-TN3-R 4N60KG-TN3-R 4N60KL-TND-R 4N60KG-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Power MOSFET Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-128.b 4N60K-MTQ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Continuous ID 4.0 A Drain Current Pulsed (Note 2) IDM 16 A Avalanche Energy Single Pulsed (Note 3) EAS 133 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 3.74 V/ns TO-220 106 TO-220F/TO-220F1 36 TO-220F2/TO-220F3 PD Power Dissipation W TO-251/TO-251S TO-251S2/TO-251S4 50 TO-252/TO-252D Junction Temperature TJ +150 °С Operating Temperature TOPR -55 ~ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L = 26mH, IAS = 3.2A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 4. ISD≤4.0A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3 Junction to Ambient TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 °C/W 110 °C/W 1.18 °C/W 3.47 °C/W 3.4 °C/W 2.50 °C/W θJA θJC 3 of 7 QW-R205-128.b 4N60K-MTQ Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS=0V, ID=250μA 600 VDS=600V, VGS=0V Drain-Source Leakage Current IDSS VDS=600V, VGS=0V, TC=125°С Forward VGS=30V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS= -30V, VDS=0V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 Static Drain-Source On-State Resistance RDS(ON) VGS=10 V, ID=2.2A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS=25V, VGS=0V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A, Gate-Source Charge QGS IG=100μA (Note 1, 2) Gate-Drain Charge QGD Turn-On Delay Time tD(ON) VDD=30V, VGS=10V, ID=0.5A, Turn-On Rise Time tR RG=25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0V, IS = 4.0A Reverse Recovery Time trr IS=4.0A, VGS=0V, dIF/dt=100A/µs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 0.6 V 10 μA 10 μA 100 nA -100 nA V/°С 4.5 3.5 V Ω 350 260 56 pF pF pF 37 4.8 5.8 50 33 74 27 nC nC nC ns ns ns ns 470 2.2 4.0 A 17.6 A 1.4 V ns µC 4 of 7 QW-R205-128.b 4N60K-MTQ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-128.b 4N60K-MTQ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-128.b 4N60K-MTQ Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-128.b