APT10021JLL
1000V 37A 0.210Ω
POWER MOS 7
R
MOSFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
D
• Increased Power Dissipation
• Easier To Drive
• Popular SOT-227 Package
MAXIMUM RATINGS
Symbol
S
S
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT10021JLL
UNIT
1000
Volts
Drain-Source Voltage
37
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
694
Watts
Linear Derating Factor
5.56
W/°C
PD
TJ,TSTG
1
148
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
37
(Repetitive and Non-Repetitive)
1
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1000
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 18.5A)
TYP
MAX
Volts
0.210
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
Ohms
µA
±100
nA
5
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
4-2004
Characteristic / Test Conditions
050-7017 Rev C
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT10021JLL
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1615
Crss
Reverse Transfer Capacitance
f = 1 MHz
335
VGS = 10V
395
VDD = 500V
47
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
ID = 37A @ 25°C
tf
22
VDD = 500V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
20
INDUCTIVE SWITCHING @ 25°C
6
1560
VDD = 667V, VGS = 15V
6
ns
80
ID = 37A @ 25°C
Turn-off Delay Time
nC
29
VGS = 15V
Rise Time
td(off)
pF
260
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
9750
VGS = 0V
3
MAX
ID = 37A, RG = 5Ω
930
INDUCTIVE SWITCHING @ 125°C
2515
VDD = 667V, VGS = 15V
ID = 37A, RG = 5Ω
µJ
1250
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
37
UNIT
IS
CContinuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -37A, dl S/dt = 100A/µs)
1300
ns
Q rr
Reverse Recovery Charge (IS = -37A, dl S/dt = 100A/µs)
38.0
µC
dv/
Peak Diode Recovery
dt
dv/
148
(Body Diode)
1.3
(VGS = 0V, IS = -37A)
dt
5
Amps
Volts
10
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.18
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 5.26mH, RG = 25Ω, Peak IL = 37A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID37A di/dt ≤ 700A/µs VR ≤ 1000V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.18
0.9
0.14
0.7
0.12
0.10
0.5
Note:
0.08
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7017 Rev C
4-2004
0.20
0.16
0.3
0.06
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.02
0
0.05
10-5
t1
t2
0.04
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
0.133
0.0218
0.0731F
0.701F
20.065F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Power
(Watts)
180
140
120
100
TJ = +125°C
80
TJ = +25°C
60
TJ = -55°C
40
20
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
50
5.5V
40
30
20
5V
10
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
V
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
D
D
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON)vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 18.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
I
V
NORMALIZED TO
= 10V @ I = 18.5A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
4-2004
ID, DRAIN CURRENT (AMPERES)
35
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
60
1.15
40
0.0
-50
6V
70
050-7017 Rev C
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
8V
80
7V
6.5
0
Case temperature
160
VGS =15 &10V
90
Junction
temp. ( ”C)
0.0244
APT10021JLL
100
148
OPERATION HERE
LIMITED BY RDS (ON)
100µS
1mS
10
10mS
Crss
10
I
D
= 37A
12
VDS=200V
VDS=500V
8
VDS=800V
4
0
100
200
300
400
500
600
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
Coss
1,000
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
0
Ciss
10,000
50
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
APT10021JLL
30,000
300
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
80
400
td(off)
V
= 667V
DD
R
70
G
= 5Ω
T = 125°C
J
60
V
DD
R
G
200
= 667V
tr and tf (ns)
td(on) and td(off) (ns)
300
= 5Ω
T = 125°C
J
L = 100µH
R
G
SWITCHING ENERGY (µJ)
4-2004
050-7017 Rev C
2500
= 667V
V
= 5Ω
I
T = 125°C
Eon
L = 100µH
EON includes
diode reverse recovery.
2000
1500
1000
Eoff
500
0
tr
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
12,000
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
10,000
SWITCHING ENERGY (µJ)
V
J
3000
30
0
5 10 15 20 25 30 35 40 45 50 55 60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
DD
3500
40
10
td(on)
4000
tf
50
20
100
0
L = 100µH
DD
D
= 667V
= 37A
T = 125°C
J
Eoff
L = 100µH
E ON includes
8,000
diode reverse recovery.
6,000
4,000
Eon
2,000
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT10021JLL
90%
10%
Gate Voltage
Gate Voltage
td(off)
TJ125°C
td(on)
90%
tr
tf
Drain Current
90%
10%
0
5%
5%
Drain Voltage
10%
T 125°C
J
Drain Voltage
Drain Current
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
4-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7017 Rev C
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)