Datasheet

UNISONIC TECHNOLOGIES CO., LTD
Preliminary
12N40K-MT
Power MOSFET
12A, 400V N-CHANNEL
POWER MOSFET

1
DESCRIPTION
The UTC 12N40K-MT is an N-channel mode power MOSFET
using UTC’ s advanced technology to provide customers with
planar stripe and DMOS technology. This technology specializes
in allowing a minimum on-state resistance and superior switching
performance. It also can withstand high energy pulse in the
avalanche and commutation mode.
The UTC 12N40K-MT is universally applied in electronic lamp
ballast based on half bridge topology and high efficient switched
mode power supply.

1
TO-220F
TO-220
1
1
TO-220F1
TO-220F2
FEATURES
* RDS(ON) < 0.47Ω @ VGS = 10 V, ID = 12 A
* High switching speed
* 100% avalanche tested

SYMBOL

ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N40KL-TA3-T
12N40KG-TA3-T
12N40KL-TF3-T
12N40KG-TF3-T
12N40KL-TF1-T
12N40KG-TF1-T
12N40KL-TF2-T
12N40KG-TF2-T
Note: Pin Assignment: G: Gate
D: Drain
S: Source
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Copyright © 2015 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
TO-220F1
TO-220F2
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
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Preliminary
Power MOSFET
MARKING
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
400
V
Gate-Source Voltage
VGSS
±30
V
Continuous (TC=25°C)
ID
12
A
Drain Current
Pulsed (Note 2)
IDM
48
A
Single Pulsed Avalanche Energy
EAS
474
mJ
TO-220
135
W
Power Dissipation
TO-220F/TO-220F1
34
W
TO-220F2
PD
TO-220
1.08
W/°C
Derate above 25°C
TO-220F/TO-220F1
0.27
W/°C
TO-220F2
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55~+150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
4. L=7.27mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C
5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C

THERMAL DATA
PARAMETER
Junction to Ambient
Junction to Case
TO-220
TO-220F/TO-220F1
TO-220F2
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
SYMBOL
θJA
θJC
RATINGS
62.5
0.92
UNIT
°С/W
°С/W
3.7
°С/W
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Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate- Source Leakage Current
SYMBOL
BVDSS
IDSS
Forward
Reverse
IGSS
TEST CONDITIONS
ID=250µA, VGS=0V
VDS=400V, VGS=0V
VGS=+30V, VDS=0V
VGS=-30V, VDS=0V
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10V, ID=12A
DYNAMIC PARAMETERS
Input Capacitance
CISS
VGS=0V, VDS=25V, f=1.0MHz
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VDS= 50V, VGS= 10V, ID= 0.3A,
Gate-Source Charge
QGS
ID=100µA (Note 1, 2)
Gate-Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
VDS= 30V, VGS= 10V, ID = 0.3A,
Rise Time
tR
RG = 25Ω (Note 1, 2)
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage
VSD
IS=12A, VGS=0V
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2%
2. Essentially independent of operating temperature
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN TYP MAX UNIT
400
V
1
µA
+100 nA
-100 nA
2.0
4.0
0.47
V
Ω
750
153
10
pF
pF
pF
31.3
8.9
8.6
62
94
162
96
nC
nC
nC
ns
ns
ns
ns
1.4
12
48
V
A
A
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
UNISONIC TECHNOLOGIES CO., LTD
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Time
Unclamped Inductive Switching Waveforms
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Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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