UNISONIC TECHNOLOGIES CO., LTD Preliminary 12N40K-MT Power MOSFET 12A, 400V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 12N40K-MT is an N-channel mode power MOSFET using UTC’ s advanced technology to provide customers with planar stripe and DMOS technology. This technology specializes in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 12N40K-MT is universally applied in electronic lamp ballast based on half bridge topology and high efficient switched mode power supply. 1 TO-220F TO-220 1 1 TO-220F1 TO-220F2 FEATURES * RDS(ON) < 0.47Ω @ VGS = 10 V, ID = 12 A * High switching speed * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N40KL-TA3-T 12N40KG-TA3-T 12N40KL-TF3-T 12N40KG-TF3-T 12N40KL-TF1-T 12N40KG-TF1-T 12N40KL-TF2-T 12N40KG-TF2-T Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd Package TO-220 TO-220F TO-220F1 TO-220F2 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tube Tube Tube Tube 1 of 7 QW-R205-019.d 12N40K-MT Preliminary Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-019.d 12N40K-MT Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 400 V Gate-Source Voltage VGSS ±30 V Continuous (TC=25°C) ID 12 A Drain Current Pulsed (Note 2) IDM 48 A Single Pulsed Avalanche Energy EAS 474 mJ TO-220 135 W Power Dissipation TO-220F/TO-220F1 34 W TO-220F2 PD TO-220 1.08 W/°C Derate above 25°C TO-220F/TO-220F1 0.27 W/°C TO-220F2 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 4. L=7.27mH, IAS=11A, VDD= 50V, RG=25Ω, Starting TJ=25°C 5. ISD ≤11A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F/TO-220F1 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL θJA θJC RATINGS 62.5 0.92 UNIT °С/W °С/W 3.7 °С/W 3 of 7 QW-R205-019.d 12N40K-MT Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate- Source Leakage Current SYMBOL BVDSS IDSS Forward Reverse IGSS TEST CONDITIONS ID=250µA, VGS=0V VDS=400V, VGS=0V VGS=+30V, VDS=0V VGS=-30V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=12A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDS= 50V, VGS= 10V, ID= 0.3A, Gate-Source Charge QGS ID=100µA (Note 1, 2) Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) VDS= 30V, VGS= 10V, ID = 0.3A, Rise Time tR RG = 25Ω (Note 1, 2) Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD IS=12A, VGS=0V Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Notes: 1. Pulse Test: Pulse width ≤ 300µs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 400 V 1 µA +100 nA -100 nA 2.0 4.0 0.47 V Ω 750 153 10 pF pF pF 31.3 8.9 8.6 62 94 162 96 nC nC nC ns ns ns ns 1.4 12 48 V A A 4 of 7 QW-R205-019.d 12N40K-MT Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-019.d 12N40K-MT Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-019.d 12N40K-MT Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-019.d