UNISONIC TECHNOLOGIES CO., LTD 8N90 Power MOSFET 8A, 900V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N90 is an N-channel mode power MOSFET, using UTC’s advanced technology to provide costumers planar stripe and DMOS technology. This technology allows a minimum on-state resistance, superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode. The UTC 8N90 is generally applied in high efficiency switch mode power supplies. FEATURES * RDS(ON)<1.55Ω @ VGS=10V * Fast Switching Speed * 100% Avalanche Tested * Improved dv/dt Capability SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 8N90L-TA3-T 8N90G-TA3-T 8N90L-TF2-T 8N90G-TF2-T Note: Pin Assignment: G: GND D: Drain S: Source Package TO-220 TO-220F2 Pin Assignment 1 2 3 G D S G D S Packing Tube Tube MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-470.E 8N90 Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain to Source Voltage Gate to Source Voltage Continuous Drain Current (TC=25°C) Pulsed Drain Current (Note 2) Avalanche Current (Note 2) Single Pulsed Avalanche Energy (Note 3) Repetitive Avalanche Energy (Note 2) Peak Diode Recovery dv/dt (Note 4) RATINGS UNIT 900 V ±30 V 8 A 25 A 6.3 A 850 mJ 17.1 mJ 4.0 V/ns TO-220 147 Power Dissipation (TC=25°C) W TO-220F2 62 PD TO-220 1.17 Linear Derating Factor above TC=25°C W/°C TO-220F2 0.5 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=27mH, IAS=8A, VDD= 50V, RG=25Ω, Starting TJ=25°C 4. ISD ≤8A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C SYMBOL VDSS VGSS ID IDM IAR EAS EAR dv/dt THERMAL DATA PARAMETER SYMBOL θJA Junction to Ambient Junction to Case TO-220 TO-220F2 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJC RATINGS 62.5 0.85 2.0 UNIT °C/W °C/W 2 of 6 QW-R502-470.E 8N90 Power MOSFET ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS VGS=0V, ID=250µA 900 ∆BVDSS/∆TJ ID=250μA, Referenced to 25°C VDS=900V, VGS=0V IDSS VDS=720V, TC=125°C IGSS VDS=0V ,VGS=±30V Gate-Source Leakage Current ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=4A Forward Transconductance (Note 2) gFS VDS=50V, ID=4A DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V,VGS=0V,f=1.0MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS (Note 2, Note 3) Total Gate Charge QG VDS=50V, VGS=10V, ID=1.3A Gate-Source Charge QGS Gate-Drain Charge QGD Turn-ON Delay Time tD(ON) Turn-ON Rise Time tR VDD=30V, ID=0.5A, RG=25Ω Turn-OFF Delay Time tD(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS =8A, VGS=0V Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 0.95 3.0 V V/°C 10 µA 100 µA ±100 nA 5.0 1.55 V Ω S 1600 2080 130 170 12 15 pF pF pF 54 12 16 95 220 275 175 nC nC nC ns ns ns ns 1.16 5.5 8 32 1.4 A A V 3 of 6 QW-R502-470.E 8N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit & Waveforms + DUT VDS RG L ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 6 QW-R502-470.E 8N90 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) VGS Same Type as DUT 12V QG 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Gate Charge Test Circuit Gate Charge Waveforms 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw VDD VDS(t) Time tP Unclamped Inductive Switching Waveforms 5 of 6 QW-R502-470.E 8N90 Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Gate Threshold Voltage 300 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) Drain Current vs. Drain-Source Breakdown Voltage 200 150 100 50 0 200 150 100 50 0 200 400 600 800 1000 0 0 1 2 3 4 6 5 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Body-Diode Continuous Current, IS (A) Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 6 QW-R502-470.E