UNISONIC TECHNOLOGIES CO., LTD 3N60K-MT Power MOSFET 3.0A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N60K-MT is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 3.2Ω @ VGS = 10 V, ID = 1.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N60KL-TA3-T 3N60KG-TA3-T 3N60KL-TF3-T 3N60KG-TF3-T 3N60KL-TF1-T 3N60KG-TF1-T 3N60KL-TF2-T 3N60KG-TF2-T 3N60KL-TF3T-T 3N60KG-TF3T-T 3N60KL-TM3-T 3N60KG-TM3-T 3N60KL-TMS-T 3N60KG-TMS-T 3N60KL-TN3-R 3N60KG-TN3-R 3N60KL-TND-R 3N60KG-TND-R Pin Assignment: G: Gate D: Drain S: Source 3N60KL-TA3-T Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel (1) T: Tube, R: Tape Reel (1)Packing Type (2)Package Type (3)Green Package www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd (2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S, TN3: TO-252, TND: TO-252D (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 7 QW-R205-044.C 3N60K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-044.C 3N60K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 150 mJ Avalanche Energy 7.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 75 W TO-220F/TO-220F1 34 W TO-220F3 PD Power Dissipation TO-220F2 35 W TO-251/TO-251S 50 W TO-252/TO-252D TO-220 1.67 W/°C TO-220F/TO-220F1 0.272 W/°C TO-220F3 PD Derate above 25°C TO-220F2 0.28 W/°C TO-251/TO-251S 0.4 W/°C TO-252/TO-252D Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=33mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤3.0A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3 Junction to Ambient TO-251/TO-251S TO-252/TO-252D TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-252/TO-252D SYMBOL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw RATINGS UNIT 62.5 °C/W 110 °C/W 1.67 °C/W 3.68 °C/W 3.58 °C/W 2.5 °C/W θJA θJC 3 of 7 QW-R205-044.C 3N60K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS IDSS VGS = 0 V, ID = 250 μA 600 V VDS = 600 V, VGS = 0 V 10 μA Forward VGS = 30 V, VDS = 0 V 100 nA Gate-Source Leakage Current IGSS -100 nA Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature I = 250 μA, △BVDSS/△TJ D 0.6 V/°C Coefficient Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 1.5A 3.2 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 320 610 pF VDS = 25 V, VGS = 0 V, Output Capacitance COSS 40 60 pF f = 1MHz 6 16 pF Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Total Gate Charge QG 13.5 nC VDS= 50V, VGS= 10 V, ID= 1.3A Gate-Source Charge QGS 5.3 nC IG = 100 μA (Note 1, 2) 2.7 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 47 ns Turn-On Rise Time tR 50 ns VDD = 30V, VGS= 10 V, ID = 0.5 A, RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) 60 ns Turn-Off Fall Time tF 30 ns SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Continuous Drain-Source Diode IS 3.0 A Forward Current Maximum Pulsed Drain-Source Diode ISM 12 A Forward Current Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A 1.4 V Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-044.C 3N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS + D.U.T. VDS + - L RG Driver VGS VGS (Driver) P.W. * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Period D= VDD P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-044.C 3N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-044.C 3N60K-MT TYPICAL CHARACTERISTICS Drain Current, ID (A) Continuous Drain-Source Diode Forward Current, IS (A) Drain Current, ID (µA) Drain Current, ID (µA) Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-044.C