UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. FEATURES * RDS(ON) < 1.4Ω @ VGS = 10V, ID = 3.1A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-021.E 6N60K-MT ORDERING INFORMATION Ordering Number Lead Free Halogen Free 6N60KL-TA3-T 6N60KG-TA3-T 6N60KL-TF3-T 6N60KG-TF3-T 6N60KL-TF1-T 6N60KG-TF1-T 6N60KL-TF2-T 6N60KG-TF2-T 6N60KL-TF3-T 6N60KG-TF3-T 6N60KL-TM3-T 6N60KG-TM3-T 6N60KL-TMS-T 6N60KG-TMS-T 6N60KL-TMS2-T 6N60KG-TMS2-T 6N60KL-TMS4-T 6N60KG-TMS4-T 6N60KL-TN3-R 6N60KG-TN3-R 6N60KL-TND-R 6N60KG-TND-R Note: Pin Assignment: G: Gate D: Drain S: Source Power MOSFET Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-021.E 6N60K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 6.2 A Continuous Drain Current ID 6.2 A Pulsed Drain Current (Note 2) IDM 24.8 A Single Pulsed (Note 3) EAS 330 mJ Avalanche Energy 13 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 3.0 V/ns TO-220 125 W TO-220F/TO-220F1 40 W TO-220F3 Power Dissipation PD TO-220F2 42 W TO-251/TO-251S TO-251S2/TO-251S4 55 W TO-252/TO-252D Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 18.33mH, IAS = 6A, VDD = 90V, RG = 25 Ω, Starting TJ = 25°C 4. ISD ≤ 6.2A, di/dt ≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3 Junction to Ambient TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATINGS UNIT 62.5 °C/W 110 °C/W 1.0 °C/W 3.2 °C/W 2.97 °C/W 2.27 °C/W θJA θJC 3 of 7 QW-R205-021.E 6N60K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN TYP MAX UNIT BVDSS VGS=0V, ID=250μA 600 V VDS=600V, VGS=0V 10 μA Drain-Source Leakage Current IDSS VDS=480V, VGS=0V, TJ =125°C 10 μA Forward VG=30V, VDS=0V 100 nA Gate- Source Leakage Current IGSS Reverse VGS=-30V, VDS=0V -100 nA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA, Referenced to 25°C 0.53 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250μA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=3.1A 1.4 Ω DYNAMIC CHARACTERISTICS Input Capacitance CISS 540 pF V =25V, V =0V, f=1.0 MHz Output Capacitance COSS 97 pF DS GS Reverse Transfer Capacitance CRSS 11 pF SWITCHING CHARACTERISTICS Total Gate Charge QG 23 nC VDS=50V, ID=1.3A, VGS=10V Gate-Source Charge QGS 6.7 nC (Note 1, 2) 5.7 nC Gate-Drain Charge QGD Turn-On Delay Time tD(ON) 60 ns VDD=30V, ID =0.5A, RG =25Ω Turn-On Rise Time tR 66 ns (Note 1, 2) Turn-Off Delay Time tD(OFF) 120 ns Turn-Off Fall Time tF 64 ns DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Maximum Continuous Drain-Source Diode IS 6.2 A Forward Current Maximum Pulsed Drain-Source Diode ISM 24.8 A Forward Current Drain-Source Diode Forward Voltage VSD IS=6.2A, VGS=0V 1.4 V Body Diode Reverse Recovery Time tRR IS=6.2A, VGS=0V, 400 ns dIF/dt=100A/µs (Note 1) Body Diode Reverse Recovery Charge QRR 2.8 nC Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%. 2. Essentially independent of operating temperature. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 4 of 7 QW-R205-021.E 6N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-021.E 6N60K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) VDS 90% VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-021.E 6N60K-MT Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (A) Continuous Drain-Source Diode Forward Current, IS (A) Drain Current, ID (µA) Drain Current, ID (µA) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R205-021.E