UNISONIC TECHNOLOGIES CO., LTD 7N70K-MTQ Preliminary Power MOSFET 7A, 700V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N70K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 1.7Ω @ VGS = 10V, ID = 3.5A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-056.a 7N70K-MTQ Preliminary ORDERING INFORMATION Ordering Number Lead Free Halogen Free 7N70KL-TF3-T 7N70KG-TF3-T 7N70KL-TF1-T 7N70KG-TF1-T 7N70KL-TF2-T 7N70KG-TF2-T 7N70KL-TM3-T 7N70KG-TM3-T 7N70KL-TMS-T 7N70KG-TMS-T 7N70KL-TMS2-T 7N70KG-TMS2-T 7N70KL-TMS4-T 7N70KG-TMS4-T 7N70KL-TN3-R 7N70KG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source Power MOSFET Package TO-220F TO-220F1 TO-220F2 TO-251 TO-251S TO-251S2 TO-251S4 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R205-056.a 7N70K-MTQ Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current TC = 25°C TC = 100°C ID RATINGS 700 ±30 7.0 4.7 28 330 14.2 4.5 UNIT V V A A A mJ mJ V/ns RATINGS UNIT 62.5 °C/W 110 °C/W 2.6 2.5 °C/W °C/W 2.2 °C/W Drain Current Pulsed (Note 2) IDM Avalanche Energy, Single Pulsed (Note 3) EAS Avalanche Energy, Repetitive, Limited by TJMAX EAR Peak Diode Recovery dv/dt (Note 4) dv/dt TO-220F/TO-220F1 48 W TO-220F2 PD Power Dissipation (TC = 25°C) TO-251/TO-251S TO-251S2/TO-251S4 57 W TO-252 Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L=13.5mH, IAS=7.0A, VDD=50V, RG=0 Ω, Starting TJ=25°C 4. ISD ≤ 7.0A, di/dt ≤100A/μs, VDD ≤ BVDSS, Starting TJ=25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL TO-220F/TO-220F1 TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252 TO-220F/TO-220F1 TO-220F2 TO-251/TO-251S TO-251S2/TO-251S4 TO-252 UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw θJA θJC 3 of 7 QW-R205-056.a 7N70K-MTQ Preliminary Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL TEST CONDITIONS MIN VGS = 0V, ID = 250μA VDS = 700V, VGS = 0V Drain-Source Leakage Current IDSS VDS = 560V, TC = 125°C Forward VGS = 30V, VDS = 0V Gate-Source Leakage Current IGSS Reverse VGS = -30V, VDS = 0V ID = 250mA Breakdown Voltage Temperature Coefficient △BVDSS/△TJ Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250μA Drain-Source ON-State Resistance RDS(ON) VGS = 10V, ID = 3.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-on Delay Time tD(ON) Turn-on Rise Time tR VDD = 30V, ID = 0.5A, RG = 25Ω (Note 1, 2) Turn-off Delay Time tD(OFF) Turn-off Fall Time tF Total Gate Charge QG VDS= 50V,ID= 1.3A, Gate-Source Charge QGS VGS= 10V (Note 1, 2) Gate-Drain Charge QDD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0V, IS =7.0A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Reverse Recovery Time trr VGS = 0V, IS = 7.0A, dIF/dt = 100 A/μs (Note 1) Reverse Recovery Charge QRR Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2% 2. Essentially independent of operating temperature 700 BVDSS UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TYP MAX UNIT 1 100 100 -100 0.67 2.5 V μA μA nA nA V/°C 4.5 1.7 V Ω 480 80 6.5 pF pF pF 57 60 128 52 21.8 6.8 4.8 ns ns ns ns nC nC nC 320 2.4 1.4 V 7.0 A 28 A ns μC 4 of 7 QW-R205-056.a 7N70K-MTQ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R205-056.a 7N70K-MTQ Preliminary Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform L VDS BVDSS IAS RD 10V VDD D.U.T. ID(t) VDS(t) VDD tp tp Unclamped Inductive Switching Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Unclamped Inductive Switching Waveforms 6 of 7 QW-R205-056.a 7N70K-MTQ Preliminary Power MOSFET UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. 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