UNISONIC TECHNOLOGIES CO., LTD UD4509-H Power MOSFET DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD4509-H is an N & P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with a minimum on-state resistance, high switching speed and low gate charge. The UTC UD4509-H is suitable for low voltage applications such as DC/DC converters. SOP-8 FEATURES * N-channel: RDS(on) < 10mΩ @ VGS=10 V, ID=10A * P-channel: RDS(on) < 21mΩ @ VGS=-10 V, ID=-7A * High switching speed * Low gate charge SYMBOL ORDERING INFORMATION Ordering Number Note: UD4509G-S08-R Pin Assignment: S: Source Pin Assignment 1 2 3 4 5 6 7 8 SOP-8 S1 G1 S2 G2 D1 D1 D2 D2 G: Gate D: Drain Package Packing Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 7 QW-R211-022.B UD4509-H Power MOSFET ABSOLUTE MAXIMUM RATINGS (TJ=25°C unless otherwise specified) RATINGS UNIT N-channel P-channe Drain-Source Voltage VDSS 30 -30 V Gate-Source Voltage VGSS ±20 ±20 V Continuous TA=25°C 11.2 -8.0 A ID (Note 3) Drain Current TA=70 9.0 -6.4 A Pulsed (Note 1) IDM 40 -30 A Power Dissipation TA=25°C PD 2 W Junction Temperature TJ -55~150 °C Storage Temperature TSTG -55~150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. PARAMETER SYMBOL THERMAL CHARACTERISTICS PARAMETER SYMBOL RATINGS Junction to Ambient (Note 3) θJA 62.5 Note: Surface mounted on 1 in2 copper pad of FR4 board ; 135 °C/W when mounted on Min. copper pad UNIT °C/W ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified) N-channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 2) Forward Transconductance DYNAMIC PARAMETERS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance SWITCHING PARAMETERS Total Gate Charge (Note 2) Gate to Source Charge Gate to Drain Charge Turn-ON Delay Time (Note 2) Rise Time Turn-OFF Delay Time Fall-Time SOURCE TO DRAIN DIODE SPECIFICATIONS Drain-Source Diode Forward Voltage (Note 2) Body Diode Reverse Recovery Time (Note 2) Body Diode Reverse Recovery Charge SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) gFS CISS COSS CRSS RG QG QGS QGD tD(ON) tR tD(OFF) tF VSD tRR QRR UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT ID=250uA, VGS=0V VDS=24V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V 30 VDS=VGS, ID=250uA VGS=10V, ID=10A VGS=4.5V, ID=7A VGS=10V, ID=10A 1 VGS=0V, VDS=25V, f=1.0MHz f=1.0MHz VGS=4.5V, VDS=15V, ID=10A VDS=15V, VGS=10V, ID=1A, RG=3.3Ω, RD=15Ω IS=1.7A, VGS=0V IS=10A, VGS=0V, dI/dt=100A/µs V 10 µA +100 nA -100 nA 3 10 16 20 V mΩ mΩ S 715 1140 pF 220 pF 160 pF 2.2 Ω 12 2.5 7.5 9 6.5 23 9.5 27 18 19.2 nC nC nC ns ns ns ns 1.2 V ns nC 2 of 7 QW-R211-022.B UD4509-H Power MOSFET ELECTRICAL CHARACTERISTICS (Cont.) P-channel PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current Forward Gate-Source Leakage Current Reverse ON CHARACTERISTICS Gate Threshold Voltage Static Drain-Source On-State Resistance (Note 2) SYMBOL BVDSS IDSS IGSS VGS(TH) RDS(ON) Forward Transconductance gFS DYNAMIC PARAMETERS Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Gate Resistance RG SWITCHING PARAMETERS Total Gate Charge (Note 2) QG Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time (Note 2) tD(ON) Rise Time tR Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE TO DRAIN DIODE SPECIFICATIONS Drain-Source Diode Forward Voltage (Note 2) VSD Body Diode Reverse Recovery Time (Note 2) tRR Body Diode Reverse Recovery Charge QRR Notes: 1. Pulse width limited by Max. junction temperature 2. Pulse test UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw TEST CONDITIONS MIN TYP MAX UNIT ID=-250uA, VGS=0V VDS=-24V, VGS=0V VGS=+20V, VDS=0V VGS=-20V, VDS=0V -30 VDS=VGS, ID=-250uA VGS=-10V, ID=-7A VGS=-4.5V, ID=-5A VGS=-10V, ID=-7A -1 VGS=0V, VDS=-25V, f=1.0MHz f=1.0MHz VGS=-4.5V, VDS=-15V, ID=-7A VDS=-15V, VGS=-10V, ID=-1A, RG=3.3Ω, RD=15Ω IS=-1.7A, VGS=0V IS=-7A, VGS=0V, dI/dt=100A/µs V -10 µA +100 nA -100 nA -3 21 32 15 V mΩ mΩ S 1260 2000 pF 210 pF 185 pF 5.6 Ω 15 3 8 10.5 6.5 40 29 22 12 24 nC nC nC ns ns ns ns -1.2 V ns nC 3 of 7 QW-R211-022.B UD4509-H Power MOSFET TYPICAL CHARACTERISTICS N-CHANNEL Drain to Source Voltage vs. Drain Current 40 VG=6V VG=8V VG=10V 30 20 0 VG=4V 20 1 2 3 0 4 0 1 Body-Diode Continuous Current, IS(A) Static Drain-Source On-State Resistance, RDS(ON) (mΩ) VG=4.5V 10 VG=10V 0 2 4 6 8 4 10 15 5 3 Forward Characteristic of Reverse Diode On-Resistance vs. Gate Voltage 20 2 Drain to Source Voltage, VDS(V) Drain to Source Voltage, VDS(V) 0 TA=150°C 10 10 0 VG=6V VG=8V VG=10V 30 VG=4V Drain Current, ID(A) Drain Current, ID(A) Drain to Source Voltage vs. Drain Current 40 TA=25°C 8 6 150°C 25°C 4 2 0 10 0 0.4 Gate to Source Voltage, (V) 0.8 1.2 1.6 2 Source to Drain Voltage, VDS (V) Safe Operating Area Transient Thermal Response Curve 1 D=0.5 Operation in This Area is Limited by RDS(on) 2 Thermal Response, θJC (t) Drain Current, ID (A) 10 100µs 10 10 1ms 1 10ms DC 0 10-1 100 Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 0.2 0.1 0.1 0.05 0.02 Notes: 1. θJA (t) = 62.5°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) 0.01 0.01 1 10 10 Drain-Source Voltage, VDS (V) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Single Pulse 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) 4 of 7 QW-R211-022.B UD4509-H Power MOSFET TYPICAL CHARACTERISTICS (Cont.) N-CHANNEL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R211-022.B UD4509-H Power MOSFET TYPICAL CHARACTERISTICS P-CHANNEL UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R211-022.B UD4509-H Power MOSFET TYPICAL CHARACTERISTICS (Cont.) P-CHANNEL UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R211-022.B