STT3585
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
Description
The STT3585 provide the designer with best combination of fast
switching,low on-resistance and cost effectiveness.
The SOT-26 package is universally used for all commercial-industrial
surface mount applications.
Features
* RoHS Compliant
* Low Gate Charge
* Low On-resistance
D1
D1
S1
D2
6
5
4
REF.
D2
A
A1
A2
c
D
E
E1
3585
Date Code
G2
G1
S1
1
2
3
G1
S2
G2
S2
Millimeter
Min.
Max.
1.10 MAX.
0
0.10
0.70
1.00
0.12 REF.
2.70
3.10
2.60
3.00
1.40
1.80
REF.
L
L1
b
e
e1
Millimeter
Min.
Max.
0.45 REF.
0.60 REF.
0°
10°
0.30
0.50
0.95 REF.
1.90 REF.
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
3
Pulsed Drain Current
V
V
3.5
-2.5
A
ID@TA=70 C
o
2.8
-1.97
A
IDM
10
-10
A
Linear Derating Factor
Tj, Tstg
Operating Junction and Storage Temperature Range
-20
±12
PD@TA=25
T otal Power Dissipation
20
±12
ID@TA=25 C
1
Unit
o
VGS
3
Ratings
Symbol
1.14
W
0.01
W/ C
-55~+150
o
o
C
Thermal Data
Parameter
Thermal Resistance Junction-ambient
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Symbo
3
Max.
Rthj-a
Ratings
110
Unit
o
C /W
Any changing of specification will not be informed individual
Page 1 of 7
STT3585
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
N-Channel Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Symbol
Min.
Typ.
Max.
Unit
BVDSS
20
_
_
V
BVDS/ Tj
_
0.02
_
V/ C
VGS(th)
0.5
_
1.2
V
VDS=VGS, ID=250uA
IGSS
_
_
±100
nA
VGS=± 12V
_
_
1
uA
VDS=20V,V GS=0
_
_
10
uA
VDS=16V,V GS=0
_
_
75
o
Drain-Source Leakage Current (Tj=25 C)
o
Drain-Source Leakage Current (Tj=70 C)
Static Drain-Source On-Resistance 2
IDSS
RDS(ON)
_
_
125
Qg
_
4
7
Gate-Source Charge
Qgs
_
0.7
_
Gate-Drain ("Miller") Charge
Qgd
2
_
Total Gate Charge
2
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Td(ON)
_
6
_
Tr
_
8
_
Td(Off)
_
10
_
Tf
_
3
_
_
230
370
55
_
40
_
Ciss
Output Capacitance
_
Coss
_
_
o
mΩ
Test Condition
VGS=0V, ID=250uA
o
Reference to 25 C, ID=-1mA
VGS=4.5V, ID=3.5A
VGS=2.5V, ID=1.2A
nC
ID=3A
VDS=16V
VGS=4.5V
VDS=15V
ID=1A
nS
VGS=5V
RG=3.3Ω
RD=15 Ω
pF
VGS=0V
VDS=20V
VDS=5V, I D=3A
f=1.0MHz
Reverse Transfer Capacitance
Crss
Forward Transconductance
Gfs
_
7
_
S
Gate Resistance
Rg
_
1.1
1.7
Ω
f=1.0MHz
Min.
Typ.
Max.
Unit
Test Condition
_
_
1.2
V
IS=1.2A , VGS=0V.
Source-Drain Diode
Parameter
Forward On Voltage
2
Symbol
VDS
Reverse Recovery Time
Trr
Reverse Recovery Charge
Qrr
_
_
16
8
_
_
nS
Is=3A, VGS=0V
nC
dl/dt=100A/us
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
O
3.Surface mounted on 1 in2 copper pad of FR4 board; 1≦5sec;180 C/W when mounted on Min. copper pad.
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 2 of 7
STT3585
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
Elektronische Bauelemente
o
P-Channel Electrical Characteristics( Tj=25 C Unless otherwise specified)
Parameter
Symbol
BVDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25oC)
o
Drain-Source Leakage Current (Tj=70 C )
Static Drain-Source On-Resistance
2
Min.
- 20
Typ.
Max.
Unit
Test Condition
_
_
V
VGS=0V, ID=-250uA
BVDS/ Tj
_
-0.01
_
V/ oC
VGS(th)
_
_
-1.2
V
VDS=VGS, ID=-250uA
IGSS
_
_
±100
nA
VGS=±12 V
_
_
-1
uA
VDS=-20V,VGS=0
_
_
-25
uA
VDS=-16V,VGS=0
_
_
120
_
_
_
_
IDSS
RDS(ON)
160
Qg
_
5
8
Gate-Source Charge
Qgs
_
1
_
Gate-Drain ("Miller") Charge
Qgd
2
_
6
_
17
_
16
_
_
5
_
_
270
430
70
_
55
_
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
_
Td(ON)
_
Tr
_
Td(Off)
Tf
_
VGS=-10V, ID=-2.8A
mΩ
nC
ID=-2A
VDS=-16V
VGS=-4.5V
VDS=-10V
ID=-1A
nS
VGS=-10V
RG=3.3Ω
RD=10 Ω
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
_
Forward Transconductance
Gfs
_
4
_
S
Min.
Typ.
Max.
Unit
_
_
-1.2
V
_
VGS=-4.5V, ID=-2.5A
VGS=-2.5V, ID=-2A
300
Total Gate Charge 2
Reference to 25oC ,ID=-1mA
pF
VGS=0V
VDS=-20V
f=1.0MHz
VDS=-5V, ID=-2A
Source-Drain Diode
Parameter
Symbol
Forward On Voltage 2
VDS
Reverse Recovery Time 2
Trr
Reverse Recovery Charge
Qrr
_
_
20
15
_
_
Test Condition
IS=-1.2A,VGS=0V.
nS
Is=-2A, V GS=0V
nC
dl/dt=100A/uS
Notes: 1.Pulse width limited by Max. junction temperature.
2.Pulse width≦300us, dutycycle≦2%.
O
3.Surface mounted on 1 in2 copper pad of FR4 board; 1≦5sec;180 C/W when mounted on Min. copper pad.
h ttp://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Any changing of specification will not be informed individual
Page 3 of 7
STT3585
Elektronische Bauelemente
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
Characteristics Curve N-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
Any changing of specification will not be informed individual
Page 4 of 7
STT3585
Elektronische Bauelemente
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
N-Channel
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
180
Fig 9. Maximum Safe Operating Area
Fig 11. Transfer Characteristics
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 5 of 7
STT3585
Elektronische Bauelemente
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
P-Channel
Fig 1. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
Fig 2. Typical Output Characteristics
Any changing of specification will not be informed individual
Page 6 of 7
STT3585
Elektronische Bauelemente
3.5 A, 20V ,RDS(ON)75mΩ
-2.5 A, -20V ,RDS(ON)160mΩ
N And P-Channel Enhancement Mode Power Mos.FET
P-Channe l
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
180
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
http://www.SeCoSGmbH.com/
01-Jun-2002 Rev. A
/W
Fig 10. Effective Transient Thermal Impedance
Fig 12. Gate Charge Waveform
Any changing of specification will not be informed individual
Page 7 of 7