SO T2 23 PBSS5360Z 60 V, 3 A PNP low VCEsat (BISS) transistor 19 February 2014 Product data sheet 1. General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4360Z. 2. Features and benefits • • • • Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High energy efficiency due to less heat generation AEC-Q101 qualified 3. Applications • • • • • • DC-to-DC conversion Supply line switching Battery charger LCD backlighting Driver in low supply voltage applications (e.g. lamps and LEDs) Inductive load driver (e.g. relays, buzzers and motors) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -60 V IC collector current - - -3 A ICM peak collector current tp ≤ 1 ms; single pulse - - -6 A RCEsat collector-emitter saturation resistance IC = -2 A; IB = -200 mA; pulsed; - - 225 mΩ tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Scan or click this QR code to view the latest information for this product PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol 2, 4 4 1 1 2 3 3 SC-73 (SOT223) sym028 6. Ordering information Table 3. Ordering information Type number Package PBSS5360Z Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 7. Marking Table 4. Marking codes Type number Marking code PBSS5360Z P5360Z 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - -80 V VCEO collector-emitter voltage open base - -60 V VEBO emitter-base voltage open collector - -7 V IC collector current - -3 A ICM peak collector current - -6 A IB base current - -500 mA IBM peak base current - -1 A Ptot total power dissipation [1] - 0.65 W [2] - 1 W [3] - 1.35 W PBSS5360Z Product data sheet tp ≤ 1 ms; single pulse tp ≤ 1 ms; single pulse All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 2 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor Symbol Parameter Conditions [4] Min Max Unit - 2 W Tj junction temperature - 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] [2] [3] [4] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 Device mounted on an FR4 PCB, 70 µm single-sided copper, tin-plated, mounting pad for collector 6 cm . 006aac674 1.5 (1) Ptot (W) (2) 1.0 (3) 0.5 0.0 -75 Fig. 1. -25 25 (1) FR4 PCB, mounting pad for collector 6 cm 2 (2) FR4 PCB, mounting pad for collector 1 cm (3) FR4 PCB, standard footprint 2 75 125 175 Tamb (°C) Power derating curves PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 3 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 192 K/W [2] - - 125 K/W [3] - - 93 K/W - - 16 K/W thermal resistance from junction to solder point [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . 2 aaa-010994 103 Zth(j-a) (K/W) 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . duty cycle = 1 102 0.75 0.33 10 0.1 0.02 1 0.5 0.2 0.05 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, tin-plated and standard footprint. Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 4 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor aaa-010995 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 10 0.1 0.02 1 0.5 0.2 0.05 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm . Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-010996 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 10 0.5 0.2 0.1 0.05 0.02 1 0.01 10-1 10-5 0 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 2 FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm . Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 5 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -48 V; IE = 0 A; Tamb = 25 °C - - -100 nA VCB = -48 V; IE = 0 A; Tj = 150 °C - - -50 µA ICES collector-emitter cut-off VCE = -48 V; VBE = 0 V; Tamb = 25 °C current - - -100 nA IEBO emitter-base cut-off current VEB = -5 V; IC = 0 A; Tamb = 25 °C - - -100 nA hFE DC current gain VCE = -5 V; IC = -50 mA; Tamb = 25 °C 150 - - VCE = -5 V; IC = -500 mA; Tamb = 25 °C 130 - - VCE = -5 V; IC = -1 A; Tamb = 25 °C 120 - - VCE = -5 V; IC = -2 A; tp ≤ 300 µs; 100 - - 80 - - - - -150 mV - - -200 mV - - -450 mV - - -550 mV - - 225 mΩ δ ≤ 0.02; Tamb = 25 °C; pulsed VCE = -5 V; IC = -3 A; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed VCEsat collector-emitter saturation voltage IC = -500 mA; IB = -50 mA; Tamb = 25 °C IC = -1 A; IB = -100 mA; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C; pulsed IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C IC = -3 A; IB = -300 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C RCEsat collector-emitter saturation resistance IC = -2 A; IB = -200 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C VBEsat base-emitter saturation IC = -1 A; IB = -100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C - - -1.2 V VBEon base-emitter turn-on voltage VCE = -5 V; IC = -1 A; pulsed; - - -1.1 V transition frequency VCE = -10 V; IC = -50 mA; f = 100 MHz; 65 130 - MHz - 28 32 pF fT tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C Tamb = 25 °C Cc collector capacitance VCB = -10 V; IE = 0 A; ie = 0 A; f = 1 MHz; Tamb = 25 °C PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 6 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor aaa-010997 500 aaa-010998 -3 IB = -25 mA hFE 400 -22.5 IC (A) (1) -20 -17.5 -2 -15 -12.5 300 -10 (2) -7.5 200 -1 100 0 -10-1 -2.5 -1 -102 -10 0 -103 -104 IC (mA) VCE = −5 V 0 -1 -2 -3 -4 VCE (V) -5 Tamb = 25 °C (1) Tamb = 100 °C Fig. 6. (2) Tamb = 25 °C (3) Tamb = −55 °C Fig. 5. -5 (3) Collector current as a function of collectoremitter voltage; typical values DC current gain as a function of collector current; typical values aaa-010999 -1.2 aaa-011000 -1.2 VBEsat (V) VBE (V) -1.0 -0.8 (1) -0.8 (1) (2) -0.6 -0.4 (2) (3) (3) -0.4 0 -10-1 Fig. 7. -1 -10 -102 -0.2 -10-1 -103 -104 IC (mA) -1 -10 VCE = −5 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values PBSS5360Z Product data sheet Fig. 8. -103 -104 IC (mA) Base-emitter saturation voltage as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 19 February 2014 -102 © NXP N.V. 2014. All rights reserved 7 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor aaa-011001 -1 aaa-011002 103 RCEsat (Ω) 102 VCEsat (V) 10 (1) -10-1 (2) 1 (1) (3) 10-1 (2) (3) -10-2 -10-1 Fig. 9. -1 -10 -102 10-2 -10-1 -103 -104 IC (mA) -1 -10 IC/IB = 20 IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Collector-emitter saturation voltage as a function of collector current; typical values PBSS5360Z Product data sheet -102 -103 -104 IC (mA) Fig. 10. Collector-emitter saturation resistance as a function of collector current; typical values All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 8 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor 11. Test information 11.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 12. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 4.6 3 0.8 0.6 0.32 0.22 Dimensions in mm 04-11-10 Fig. 11. Package outline SC-73 (SOT223) PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 9 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor 13. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig. 12. Reflow soldering footprint for SC-73 (SOT223) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 1 2 8.7 Dimensions in mm 3 1.9 (3×) 2.7 occupied area preferred transport direction during soldering 2.7 1.1 1.9 (2×) sot223_fw Fig. 13. Wave soldering footprint for SC-73 (SOT223) PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 10 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PBSS5360Z v.1 20140219 Product data sheet - - PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. 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All rights reserved 12 / 14 PBSS5360Z NXP Semiconductors 60 V, 3 A PNP low VCEsat (BISS) transistor No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Translations — A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. 15.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................2 9 Thermal characteristics .........................................4 10 Characteristics ....................................................... 6 11 11.1 Test information ..................................................... 9 Quality information ............................................... 9 12 Package outline ..................................................... 9 13 Soldering .............................................................. 10 14 Revision history ................................................... 11 15 15.1 15.2 15.3 15.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP N.V. 2014. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 19 February 2014 PBSS5360Z Product data sheet All information provided in this document is subject to legal disclaimers. 19 February 2014 © NXP N.V. 2014. All rights reserved 14 / 14