UNISONIC TECHNOLOGIES CO., LTD 12N06Z Power MOSFET 12A, 60V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 12N06Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, high switching speed and low gate charge. TO-252 FEATURES * 12A, 60V, RDS(on) < 0.10Ω @VGS = 10V * High switching speed * Low gate charge * Halogen Free SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free 12N06ZL-TN3-R 12N06ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain Package TO-252 S: Source www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 G Pin Assignment 2 3 D S Packing Tape Reel 1 of 3 QW-R502-767.a 12N06Z Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V ID 12 A Continuous TC = 25°C Drain Current Pulsed IDM 48 A Total Dissipation at TC = 25°C PTOT 30 W Peak Diode Recovery dv/dt dv/dt 15 V/ns Avalanche Energy EAS 140 mJ Junction Temperature TJ -55~+175 °C Storage Temperature Range TSTG -55~+175 °C Notes: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Max Junction to Case Max SYMBOL θJA θJC RATINGS 100 5 UNIT °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS ID=250μA Drain-Source Breakdown Voltage BVDSS Drain-Source Leakage Current IDSS VDS=60V VGS=±20V Gate- Source Leakage Current Forward IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS=VGS, ID=250µA Static Drain-Source On-State Resistance RDS(ON) VDS=10V, ID=6A On State Drain Current ID(ON) VGS=10V, VDS=1V DYNAMIC PARAMETERS Input Capacitance CISS VDS=25V, f=1MHz, VGS=0V Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VGS=5V, ID=12A, VDD=48V Gate to Source Charge QGS Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=6A, RG=4.7Ω, VGS=0~10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=12A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 60 1 0.08 5 1 ±10 V µA µA 3 0.1 30 V Ω A 350 75 30 7.5 2.5 3.0 10 35 20 13 pF pF pF 10 nC nC nC ns ns ns ns 12 48 1.5 A A V 2 of 3 QW-R502-767.A 12N06Z Power MOSFET Drain Current, ID (A) Drain Current, ID (µA) Drain Current, ID (A) Drain Current, ID (µA) TYPICAL CHARACTERISTICS UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-767.A