Datasheet

UNISONIC TECHNOLOGIES CO., LTD
12N06Z
Power MOSFET
12A, 60V N-CHANNEL
POWER MOSFET
„
DESCRIPTION
1
The UTC 12N06Z is an N-channel enhancement mode Power
MOSFET using UTC’ s advanced technology to provide customers
with a minimum on-state resistance, high switching speed and low
gate charge.
„
TO-252
FEATURES
* 12A, 60V, RDS(on) < 0.10Ω @VGS = 10V
* High switching speed
* Low gate charge
* Halogen Free
„
„
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
12N06ZL-TN3-R
12N06ZG-TN3-R
Note: Pin Assignment: G: Gate D: Drain
Package
TO-252
S: Source
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
1
G
Pin Assignment
2
3
D
S
Packing
Tape Reel
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QW-R502-767.a
12N06Z
„
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
ID
12
A
Continuous TC = 25°C
Drain Current
Pulsed
IDM
48
A
Total Dissipation at TC = 25°C
PTOT
30
W
Peak Diode Recovery dv/dt
dv/dt
15
V/ns
Avalanche Energy
EAS
140
mJ
Junction Temperature
TJ
-55~+175
°C
Storage Temperature Range
TSTG
-55~+175
°C
Notes:
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL CHARACTERISTICS
PARAMETER
Junction to Ambient Max
Junction to Case Max
„
SYMBOL
θJA
θJC
RATINGS
100
5
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TCASE=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
ID=250μA
Drain-Source Breakdown Voltage
BVDSS
Drain-Source Leakage Current
IDSS
VDS=60V
VGS=±20V
Gate- Source Leakage Current Forward
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250µA
Static Drain-Source On-State Resistance
RDS(ON)
VDS=10V, ID=6A
On State Drain Current
ID(ON)
VGS=10V, VDS=1V
DYNAMIC PARAMETERS
Input Capacitance
CISS
VDS=25V, f=1MHz, VGS=0V
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING PARAMETERS
Total Gate Charge
QG
VGS=5V, ID=12A, VDD=48V
Gate to Source Charge
QGS
Gate to Drain Charge
QGD
Turn-ON Delay Time
tD(ON)
Rise Time
tR
VDD=30V, ID=6A, RG=4.7Ω,
VGS=0~10V
Turn-OFF Delay Time
tD(OFF)
Fall-Time
tF
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body-Diode Continuous Current
IS
Maximum Body-Diode Pulsed Current
ISM
Drain-Source Diode Forward Voltage
VSD
IS=12A
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
TYP MAX UNIT
60
1
0.08
5
1
±10
V
µA
µA
3
0.1
30
V
Ω
A
350
75
30
7.5
2.5
3.0
10
35
20
13
pF
pF
pF
10
nC
nC
nC
ns
ns
ns
ns
12
48
1.5
A
A
V
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QW-R502-767.A
12N06Z
Power MOSFET
Drain Current, ID (A)
Drain Current, ID (µA)
Drain Current, ID (A)
Drain Current, ID (µA)
TYPICAL CHARACTERISTICS
„
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R502-767.A