UNISONIC TECHNOLOGIES CO., LTD UF3N30Z Power MOSFET 3A, 300V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC UF3N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. TO-251S 1 TO-252 SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF3N30ZL-TM3-T UF3N30ZG-TM3-T UF3N30ZL-TMS-T UF3N30ZG-TMS-T UF3N30ZL-TN3-R UF3N30ZG-TN3-R Note: Pin Assignment: G: Gate D: Drain S: Source 1 FEATURES * RDS(ON) < 2Ω @ VGS=10V, ID=1.5A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested TO-251 Package TO-251 TO-251S TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-826.D UF3N30Z Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage SYMBOL RATINGS UNIT VDSS 300 V VGSS ±20 V Continuous ID 3 A Continuous Drain Current Pulsed IDM 12 A Avalanche Energy EAS 52 mJ Power Dissipation (TC=25°C) PD 50 W Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=300V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Turn-ON Delay Time tD(ON) VDD=30V, ID=0.5A, RG=25Ω, Rise Time tR V Turn-OFF Delay Time tD(OFF) GS=0~10V Fall-Time tF Total Gate Charge QG VDD=50V, ID=1.3A, IG=100µA, Gate to Source Charge QGS VGS=10V Gate to Drain Charge QGD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=0.85A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 300 2 1 10 -10 V µA µA µA 4 2 V Ω 200 90 30 pF pF pF 10 50 30 40 4 0.64 1.6 ns ns ns ns nC nC nC 3 12 1.3 A A V 2 of 3 QW-R502-826.D UF3N30Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 200 150 100 50 50 0 0 0 0.7 2.1 2.8 1.4 3.5 4.2 Gate Threshold Voltage, VTH (V) Drain Current, ID (A) Drain Current, ID (A) 0 70 210 280 350 140 Drain-Source Breakdown Voltage, BVDSS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-826.D