UNISONIC TECHNOLOGIES CO., LTD UF2N30Z Power MOSFET 2A, 300V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF2N30Z is an N-channel enhancement mode Power MOSFET using UTC’ s advanced technology to provide customers with a minimum on-state resistance, low gate charge and superior switching performance. FEATURES * RDS(ON) < 2.5Ω @ VGS=10V, ID=1A * High switching speed * Typically 4nC low gate charge * 100% avalanche tested SYMBOL ORDERING INFORMATION Ordering Number Lead Free Halogen Free UF2N30ZG-AA3-R UF2N30ZL-TM3-T UF2N30ZG-TM3-T UF2N30ZL-TMS-T UF2N30ZG-TMS-T UF2N30ZL-TN3-T UF2N30ZG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-223 TO-251 TO-251S TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S Packing Tape Reel Tube Tube Tube MARKING SOT-223 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd TO-251 / TO-251S / TO-252 1 of 3 QW-R502-761.F UF2N30Z Power MOSFET ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Pulsed Avalanche Energy Power Dissipation (TC=25°C) SYMBOL VDSS VGSS ID IDM EAS SOT-223 TO-251/TO-251S TO-252 PD RATINGS 300 ±20 2 8 52 0.8 UNIT V V A A mJ W 1.13 Junction Temperature TJ +150 °C Storage Temperature Range TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS ID=250µA, VGS=0V Drain-Source Leakage Current IDSS VDS=300V Forward VGS=+20V, VDS=0V Gate-Source Leakage Current IGSS Reverse VGS=-20V, VDS=0V ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) ID=250µA Static Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1A DYNAMIC PARAMETERS Input Capacitance CISS VGS=0V, VDS=25V, f=1MHz Output Capacitance COSS Reverse Transfer Capacitance CRSS SWITCHING PARAMETERS Total Gate Charge QG VDD=50V, ID=1.3A, Gate to Source Charge QGS IG=100µA, VGS=10V Gate to Drain Charge QGD Turn-ON Delay Time tD(ON) Rise Time tR VDD=30V, ID=0.5A, RG=25Ω, VGS=0~10V Turn-OFF Delay Time tD(OFF) Fall-Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Drain-Source Diode Forward Voltage VSD IS=2A UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 300 2 1 10 -10 V µA µA µA 4 2.5 V Ω 200 90 30 4 0.64 1.6 29 110 50 99 pF pF pF 6 35 125 56 120 nC nC nC ns ns ns ns 2 8 1.3 A A V 2 of 3 QW-R502-761.F UF2N30Z Power MOSFET TYPICAL CHARACTERISTICS Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) Drain Current, ID (µA) 300 200 150 100 50 0 200 150 100 50 0 70 140 210 280 0 0 350 1.4 2.1 2.8 3.5 4.2 Gate Threshold Voltage, VTH (V) Drain-Source Breakdown Voltage, BVDSS (V) Drain Current, ID (A) Drain Current, ID (A) 0.7 UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R502-761.E