AOL1700 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFET TM AOL1700 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. VDS (V) = 30V ID =85A (VGS = 10V) RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 6.0mΩ (VGS = 4.5V) -RoHS Compliant -Halogen and Antimony Free Green Device* UIS Tested! Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D Bottom tab connected to drain S G S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain Current B H C Units V ±20 V ID 81 IDM 200 TA=25°C Continuous Drain Current A Maximum 30 85 TC=100°C Pulsed Drain Current SRFET TM Soft Recovery MOSFET: Integrated Schottky Diode A 17 IDSM TA=70°C A 13 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.3mH C EAR 135 mJ TC=25°C Power Dissipation B TA=25°C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Case D 2.1 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.3 TJ, TSTG t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 100 PD TC=100°C RθJA RθJC Typ 19.6 50 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.aosmd.com AOL1700 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Min Conditions ID=1mA, VGS=0V Typ 30 0.1 TJ=125°C 20 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 200 VGS=10V, ID=20A 0.1 µA 2.2 V 3.4 4.2 5.2 6.5 6.0 A Static Drain-Source On-Resistance VGS=4.5V, ID=20A 4.8 gFS Forward Transconductance VDS=5V, ID=20A 90 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Diode Continuous Current H DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 0.36 3760 VGS=0V, VDS=15V, f=1MHz mΩ mΩ S 0.5 V 85 A 4512 pF 682 pF 314 VGS=0V, VDS=0V, f=1MHz mA 1.5 RDS(ON) TJ=125°C Units V VDS=30V, VGS=0V IGSS Coss Max pF 0.75 1.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 62 74 nC Qg(4.5V) Total Gate Charge 29 35 nC VGS=10V, VDS=15V, ID=20A Qgs Gate Source Charge 12 nC Qgd Gate Drain Charge 12 nC tD(on) Turn-On DelayTime 9.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 8.5 ns 34 ns 9 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=300A/µs 18 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 22 27 ns nC A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using steady-state junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev3: Dec 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200 10V 30 5V VDS=5V 175 7V 6V 150 25 4.5V 4.0V 20 ID(A) ID (A) 125 100 3.5V 125° 15 75 25°C 10 50 VGS=3.0V 25 5 0 0 0 1 2 3 4 5 1 1.5 VDS (Volts) Figure 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 7 Normalized On-Resistance 2 6 RDS(ON) (mΩ ) 2 VGS=4.5V 5 4 3 VGS=10V 2 ID=20A 1.8 VGS=10V 1.6 VGS=4.5V 1.4 1.2 1 0.8 0 5 10 15 20 25 30 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 30 60 90 120 150 180 210 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 8 1.0E+02 ID=20A 1.0E+01 125°C 1.0E+00 125°C 6 IS (A) RDS(ON) (mΩ ) 7 5 4 1.0E-01 25°C 1.0E-02 1.0E-03 3 25°C 1.0E-04 2 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6.00E-09 10 5.00E-09 VDS=15V ID=20A 6 Capacitance (nF) VGS (Volts) 8 4 2 3.00E-09 2.00E-09 Coss Crss 1.00E-09 0 0.00E+00 0 10 20 30 40 50 60 70 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 200 1000.0 10µs 10.0 DC 10ms 100ms 1.0 TJ(Max)=175°C TC=25°C 0.1 180 100µ 1ms RDS(ON) limited Power (W) 100.0 ID (Amps) Ciss 4.00E-09 TJ(Max)=175°C TC=25°C 160 140 120 100 0.0 80 0.01 0.1 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1700 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS TC=25°C 100 80 Power Dissipation (W) ID(A), Peak Avalanche Current 120 TC=150°C 60 40 20 0 1.0E-07 1.0E-06 1.0E-05 1.0E-04 110 100 90 80 70 60 50 40 30 20 10 0 0 1.0E-03 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 100 100 80 TJ(Max)=150°C TA=25°C 80 60 Power (W) Current rating ID(A) 25 40 20 60 40 20 0 0 0 25 50 75 100 125 150 175 0.001 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1700 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 BVDSS AR Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com