AOL1712 N-Channel Enhancement Mode Field Effect Transistor General Description SRFET TM AOL1712 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications. Features VDS (V) = 30V (VGS = 10V) ID =65A RDS(ON) < 4.2mΩ (VGS = 10V) RDS(ON) < 5.5mΩ (VGS = 4.5V) TM Ultra SO-8 Top View D D TM Bottom tab connected to drain S G S G Absolute Maximum Ratings TC=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage VGS TC=25°C Continuous Drain B, H Current Pulsed Drain Current ID C IDM Power Dissipation A C TA=25°C Junction and Storage Temperature Range 1/6 D A IAR 38 A EAR 217 mJ 100 2.1 W 1.3 TJ, TSTG -55 to 175 Symbol t ≤ 10s Steady-State Steady-State W 50 PDSM TA=70°C Maximum Junction-to-Case A 12 PD TC=100°C Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient V 80 IDSM Avalanche Current C Power Dissipation ±12 16 TA=70°C B Units V 65 TA=25°C Repetitive avalanche energy L=0.3mH TC=25°C Maximum 30 65 TC=100°C Continuous Drain A Current SRFET Soft Recovery MOSFET: Integrated Schottky Diode RθJA RθJC Typ 19.6 50 1 °C Max 25 60 1.5 Units °C/W °C/W °C/W www.freescale.net.cn AOL1712 N-Channel Enhancement Mode Field Effect Transistor Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±12V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.4 VGS=10V, VDS=5V 80 TJ=125°C VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode + Schottky Diode Continuous Current H DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge 20 VGS=10V, VDS=15V, ID=20A ±100 nA 2.5 V 3.5 4.2 5.5 6.6 4.4 5.5 A 90 0.5 V 65 A 5120 pF 590 pF 255 pF 0.72 1.1 Ω 73 95 nC nC 35 10.4 nC 12.4 nC 9.8 ns tD(on) Turn-On DelayTime Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, dI/dt=300A/µs 36 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=300A/µs 32 Body Diode Reverse Recovery Time mΩ S 0.36 tr VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω mA 1.8 3940 VGS=0V, VDS=15V, f=1MHz Units V 0.1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ 8.4 ns 45 ns ns 10 43 ns nC A: The value of R θJA is measured with the device in a still air environment with T A=25°C. The power dissipation P DSM and current rating IDSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev3: July. 2008 2/6 www.freescale.net.cn AOL1712 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 100 VDS=5V 10V 80 4.5V 3.5V 60 40 ID(A) ID (A) 60 VGS=3.0V 40 125°C 20 20 25°C 0 0 0 0.5 1 1.5 2 2.5 3 1 1.5 2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics 5 4 Normalized On-Resistance 1.9 VGS=4.5V 4.5 RDS(ON) (mΩ ) 2 4 VGS=10V 3.5 3 ID=20A 1.7 VGS=10V 1.5 VGS=4.5V 1.3 1.1 0.9 0.7 0 5 10 15 20 25 30 -40 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -15 10 35 60 85 110 135 160 185 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 12 100 10 10 8 1 125°C IS (A) RDS(ON) (mΩ ) ID=20A 125°C 6 0.1 25°C 4 0.01 25°C 2 0.001 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 3/6 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics www.freescale.net.cn AOL1712 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 6000 VDS=15V ID=20A 5000 Ciss Capacitance (nF) VGS (Volts) 8 6 4 2 4000 3000 2000 Coss Crss 1000 0 0 0 10 20 30 40 50 60 70 80 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10000 TJ(Max)=175°C TC=25°C 100µs RDS(ON) limited 10.0 Power (W) ID (Amps) 1ms 10ms 100ms 1000 100 DC TJ(Max)=175°C TC=25°C 1.0 0.1 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 0.0001 0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJC=1.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) 4/6 www.freescale.net.cn AOL1712 N-Channel Enhancement Mode Field Effect Transistor TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 TC=25°C 60 40 100 80 60 40 20 0 20 1.0E-06 1.0E-05 1.0E-04 0 1.0E-03 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 80 100 TJ(Max)=150°C TA=25°C 80 60 Power (W) Current rating ID(A) 25 40 60 40 20 20 0 0 25 50 75 100 125 150 0 0.001 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure15: Single Pulse Power Rating Junction-toAmbient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJc.RθJc RθJA=60°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) 5/6 www.freescale.net.cn AOL1712 N-Channel Enhancement Mode Field Effect Transistor Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig 6/6 L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.freescale.net.cn