AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suite for use as a High side switch in CPU core power conversion. VDS (V) = 25V ID = 50A (VGS = 10V) RDS(ON) < 6mΩ (VGS = 20V) RDS(ON) < 8.2mΩ (VGS = 12V) RDS(ON) < 11.5mΩ (VGS = 10V) -RoHS Compliant -Halogen and Antimony Free Green Device* UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D S Bottom tab connected to drain G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain TC=25°C G B Current TC=100°C ID C Pulsed Drain Current IDM Continuous Drain TA=25°C A Current TA=70°C C Avalanche Current Repetitive avalanche energy L=0.3mHC Power Dissipation B TC=25°C TC=100°C IDSM IAR EAR PD TA=25°C PDSM TA=70°C Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-CaseD Power Dissipation S G Units V V ±30 50 48 120 15 12 A A 28 A 118 43 mJ W 22 2.3 1.4 A Alpha & Omega Semiconductor, Ltd. Maximum 25 W -55 to 175 Symbol RθJA RθJC Typ 20 46 2.5 °C Max 25 55 3.5 Units °C/W °C/W °C/W www.aosmd.com AOL1436 Electrical Characteristics (T J=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 25 IGSS Gate-Body leakage current VDS=0V, VGS= ±30V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 2 ID(ON) On state drain current VGS=12V, V DS=5V 120 TJ=55°C nA 3.2 4 V VGS=20V, ID=20A 5 6 A mΩ VGS=12V, ID=20A 6.6 8.2 mΩ 8.6 11.5 VGS=10V, ID=20A gFS Forward Transconductance VSD Diode Forward Voltage IS=1A,V GS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(12V) Total Gate Charge Qg(10V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime µA 5 100 TJ=125°C IS Units V 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max VDS=20V, V GS=0V IDSS RDS(ON) Typ 11 43 S 0.72 1100 VGS=0V, VDS=12.5V, f=1MHz 1 V 50 A 1350 pF 420 pF 200 VGS=0V, VDS=0V, f=1MHz VGS=10V, V DS=12.5V, ID=20A VGS=10V, V DS=12.5V, R L=0.68Ω, RGEN=0.6Ω mΩ pF 0.8 1.5 Ω 20 24 nC 17 6.5 nC 6.8 nC 9.5 ns 13.5 ns 11.5 ns tf Turn-Off Fall Time 5.4 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 32 Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 19 ns nC Qrr A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on steady state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. * This device is guaranteed green after date code 8P11 (June 1ST 2008) Rev2: June 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 120 20V 10V 100 60 12V ID(A) ID(A) 80 60 VDS=5V 40 VGS=8V 40 125°C 20 25°C 20 0 0 4 0 1 2 3 4 VDS (Volts) Figure 1: On-Region Characteristics 6 7 8 9 VGS(Volts) Figure 2: Transfer Characteristics 10.0 1.6 Normalized On-Resistance VGS=10V 9.0 8.0 RDS(ON) (mΩ) 5 5 7.0 VGS=12V 6.0 5.0 4.0 VGS=20V 3.0 VGS=20V ID=20A 1.4 1.2 VGS=12V VGS=10V 1 VGS=10V VGS=12V 0.8 VGS=20V 2.0 0 5 10 15 20 25 0.6 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 ID=20A 18 1.0E+01 1.0E+00 IS (A) RDS(ON) (mΩ) 14 TC=100°C 10 TA=25°C 125°C 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 -55 to 175 6 1.0E-04 25°C 1.0E-05 2 8 10 12 14 16 18 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 20 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.aosmd.com AOL1436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1600 20 VDS=12.5V ID=20A 18 16 Capacitance (pF) VGS (Volts) 14 12 10 8 6 1200 1000 4 Coss 800 600 400 Crss 200 2 0 0 5 10 15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 80 60 T J(Max)=175°C T C=25°C 0.1 T J(Max)=175°C T C=25°C 120 100 DC 0.0 0.01 5 Power (W) 100ms 10µs 100µs 1.0 0.1 0 140 100.0 10.0 0 35 1000.0 ID (Amps) Ciss 1400 40 1 VDS (Volts) 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 20 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) 100 ZθJC Normalized Transient Thermal Resistance 10 D=T on/T T J,PK =T c+PDM.ZθJC.RθJC RθJC=3.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 TC=100°C TA=25°C PD 0.1 -55 to 175 T on T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1436 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 T A=25°C Power Dissipation (W) ID(A), Peak Avalanche Current 100 80 25°C 60 150°C 40 20 40 30 20 10 0 0.00001 0 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note B) 60 100 50 80 40 Power (W) Current rating ID(A) 50 30 20 10 60 40 20 0 0 25 50 75 100 125 150 175 TCASE (°C) Figure 14: Current De-rating (Note B) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) ZθJA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 Single Pulse 0.001 0.00001 0.0001 PD D=T on/T T J,PK =T A+PDM.ZθJA.RθJA RθJA=55°C/W 0.01 0.001 0.01 0.1 T on 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1436 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 BVDSS AR Vds Id + Vgs Vgs VDC - Rg I AR Vdd Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Alpha & Omega Semiconductor, Ltd. L Isd + VDC - IF trr dI/dt IRM Vdd Vdd Vds www.aosmd.com