AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD protected. This device is suitable for use as a low side switch in SMPS and general purpose applications. -RoHS Compliant -Halogen and Antimony Free Green Device* VDS (V) = 40V ID = 50A (VGS = 10V) RDS(ON) < 9mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) ESD Protected UIS Tested Rg,Ciss,Coss,Crss Tested Ultra SO-8TM Top View D D G Bottom tab connected to drain S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B TC=25°C H Units V ±20 V 50 TC=100°C Pulsed Drain Current C Continuous Drain Current A Maximum 40 ID 48 IDM 100 TA=25°C A 12 IDSM TA=70°C A 10 Avalanche Current C IAR 30 A Repetitive avalanche energy L=0.3mH C EAR 135 mJ TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C Maximum Junction-to-Case D 2.1 -55 to 175 Symbol Alpha & Omega Semiconductor, Ltd. W 1.3 TJ, TSTG t ≤ 10s Steady-State Steady-State W 30 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A 60 PD RθJA RθJC Typ 20 50 1.8 °C Max 25 60 2.5 Units °C/W °C/W °C/W www.aosmd.com AOL1454 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Min Conditions ID=250uA, VGS=0V Typ 40 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 100 ±100 VGS=10V, ID=20A 2 RDS(ON) Static Drain-Source On-Resistance gFS Forward Transconductance VDS=5V, ID=20A 47 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current VGS=4.5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 9.0 10 10.3 1600 VGS=0V, VDS=20V, f=1MHz 3 uA uA V A 7.5 TJ=125°C Units V VDS=40V, VGS=0V VGS(th) Coss Max 13 mΩ mΩ S 1 V 50 A 1920 pF 320 pF 100 pF 3.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 22 nC Qg(4.5V) Total Gate Charge 10.5 nC VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A Qgs Gate Source Charge 4.2 nC Qgd Gate Drain Charge 4.8 nC tD(on) Turn-On DelayTime 6.5 ns 12.5 ns 33 ns 16 ns ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=20V, RL=1Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=20A, dI/dt=100A/µs 31 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs 33 A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation P DSM and current rating I DSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation PD is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. * This device is guaranteed green after date code 8P11 (June 1 ST 2008) Rev1: June 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V -40°C VDS=5V ID=250uA, VGS=0V 5V 80 25°C 80 VDS=40V, V4V GS=0V 125°C 60 ±100 ID(A) ID (A) 60 40 40 VGS=3.5V 20 uA 20 VGS=3V -40°C 125°C 25°C 0 0 0 1 2 3 4 2 5 2.5 3.5 4 4.5 12 5.5 500 150 60 1.6 Normalized On-Resistance VGS=4.5V 11 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (mΩ ) 3 10 9 8 VGS=10V 7 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=5A 1 0.8 6 0 5 10 15 20 25 0.6 30 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 30 1.0E+01 ID=20A 1.0E+00 25 IS (A) RDS(ON) (mΩ ) 1.0E-01 20 15 125°C 1.0E-02 1.0E-03 125°C 10 1.0E-04 25°C -40°C 25°C 1.0E-05 5 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AOL1454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2400 10 VDS=20V ID=20A 2000 ID=250uA, VGS=0V VDS=40V, VGS=0V 6 4 Capacitance (pF) VGS (Volts) 8 Ciss 1600 ±100 uA 1200 800 Coss Crss 2 400 0 0 4 8 12 16 20 0 24 0 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 35 VDS (Volts) Figure 8: Capacitance Characteristics 500 150 60 1000.0 200 10µs RDS(ON) limited 10.0 180 160 10ms 1m DC 1.0 TJ(Max)=175°C TC=25°C 0.1 120 100 80 60 40 20 0.0 0.01 0.1 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=2.5°C/W 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance TJ(Max)=175°C Tc=25°C 140 Power (W) ID (Amps) 100.0 40 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton 0.01 0.00001 T Single Pulse 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1454 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 70 100 ID=250uA, VGS=0V VDS=40V, VGS=0V 80 60 TA=150°C TA=25°C 40 20 Power Dissipation (W) ID(A), Peak Avalanche Current 120 60 50 ±100 40 30 20 10 0 0 0.000001 0.00001 0.0001 0.001 0 25 Time in avalanche, t A (s) Figure 12: Single Pulse Avalanche capability 75 100 125 150 175 500 150 60 100 90 50 TA=25°C 80 70 40 Power (W) Current rating ID(A) 50 TCASE (°C) Figure 13: Power De-rating (Note B) 60 30 20 60 50 40 30 20 10 10 0 0 0 25 50 75 100 125 150 0.001 175 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note G) TCASE (°C) Figure 14: Current De-rating (Note B) Zθ JA Normalized Transient Thermal Resistance uA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOL1454 Gate Charge Test Circuit & Waveform Vgs Qg ID=250uA, VGS=0V + 10V VDS=40V, + VGS=0V VDC - Qgs Vds VDC Qgd DUT TA=150°C TA=25°C ±100 uA Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% 500 150 60 + Vdd VDC - Rg 10% TA=25°C Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg I AR Vdd Id DUT Vgs Vgs In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=60°C/W Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Single Pulse Vds - Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com