AON1620 12V N-Channel MOSFET General Description Product Summary The AON1620 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. ID (at VGS=4.5V) 12V 4A Top View VDS RDS(ON) (at VGS =4.5V) < 22mΩ RDS(ON) (at VGS =2.5V) < 27mΩ RDS(ON) (at VGS =1.8V) < 36mΩ Typical ESD protection HBM Class 2 DFN 1.6x1.6A Bottom View D Pin 1 D S S G G S Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Rev 0 : Sep. 2012 Steady-State A 1.8 W 1.15 TJ, TSTG Symbol t ≤ 10s V 16 PD TA=70°C ±8 3 IDM TA=25°C Power Dissipation A Units V 4 ID TA=70°C Maximum 12 RθJA www.aosmd.com -55 to 150 Typ 56 88 °C Max 70 110 Units °C/W °C/W Page 1 of 5 AON1620 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS, ID=250µA 0.4 ID(ON) On state drain current VGS=4.5V, VDS=5V 16 V TJ=55°C 0.7 18 22 29 VGS=2.5V, ID=3A 21 27 mΩ VGS=1.8V, ID=2A 27 36 mΩ VGS=1.5V, ID=1A 35 Forward Transconductance VDS=5V, ID=4A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.65 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=6V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr V A gFS Crss µA 1.0 23.5 TJ=125°C Output Capacitance µA 5 ±10 VGS=4.5V, ID=4A Coss Units 1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max 12 VDS=12V, VGS=0V IDSS RDS(ON) Typ mΩ S 1 V 2.5 A 770 pF 180 pF 130 pF 1.2 Ω 8 VGS=4.5V, VDS=6V, ID=4A mΩ 12 nC 1 nC Gate Drain Charge 2 nC Turn-On DelayTime 2.5 ns 3.5 ns VGS=4.5V, VDS=6V, RL=3.75Ω, RGEN=3Ω 25 ns 4 ns IF=4A, dI/dt=100A/µs 10 Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 3 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0 : Sep. 2012 www.aosmd.com Page 2 of 5 AON1620 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 20 2V VDS=5V 2.5V 15 4.5V ID(A) ID (A) 15 10 1.5V 125°C 10 5 5 25°C VGS=1.0V 0 0 0 1 2 3 4 0 5 1 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 100 60 VGS=1.5V 40 VGS=1.8V 20 VGS=4.5V 0 0 Normalized On-Resistance 1.6 80 RDS(ON) (mΩ Ω) 0.5 VGS=4.5V ID=4A 1.4 VGS=2.5V ID=3A 1.2 VGS=1.8V ID=2A 1 VGS=1.5V ID=1A VGS=2.5V 0.8 0 2 4 6 8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.0E+01 50 ID=4A IS (A) 1.0E+00 RDS(ON) (mΩ Ω) 40 30 125°C 125°C 1.0E-01 1.0E-02 1.0E-03 25°C 20 25°C 10 1.0E-04 1.0E-05 0 2 3 4 5 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0 : Sep. 2012 1 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AON1620 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1200 VDS=6V ID=4A 1000 Ciss Capacitance (pF) VGS (Volts) 4 3 2 1 800 600 Coss 400 200 Crss 0 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 12 200 100.0 10µs 10µs 100µs RDS(ON) limited 1ms 1.0 0.1 10ms 100ms 1s DC TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 160 Power (W) 10.0 -ID (Amps) 2 4 6 8 10 VDS (Volts) Figure 8: Capacitance Characteristics 120 80 40 0.0 0 0.01 0.1 1 -VDS (Volts) 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note H) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=110°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0 : Sep. 2012 www.aosmd.com Page 4 of 5 AON1620 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 0 : Sep. 2012 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5