Datasheet

AON2802
30V Dual N-Channel MOSFET
General Description
Product Summary
The AON2802 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON). This device is ideal for load switch
and battery protection applications.
ID (at VGS=10V)
VDS
30V
2A
RDS(ON) (at VGS=10V)
< 60mΩ
RDS(ON) (at VGS=4.5V)
< 68mΩ
RDS(ON) (at VGS=2.5V)
< 88mΩ
Typical ESD protection
HBM Class 3A
DFN 2x2A
Top View
D2
Pin 1
G1
S1
S1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
VGS
TA=25°C
Continuous Drain
Current G
Pulsed Drain Current
C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Rev 0: Sep. 2012
Steady-State
±12
V
A
8
W
1.3
TJ, TSTG
Symbol
t ≤ 10s
Units
V
2.1
PD
Junction and Storage Temperature Range
Maximum
30
1.6
IDM
TA=70°C
S2
2
ID
TA=70°C
TA=25°C
Power Dissipation B
G2
G1
Pin 1
Gate-Source Voltage
D2
D1
Bottom View
D1
G2
S2
D1
D2
RθJA
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-55 to 150
Typ
50
80
°C
Max
60
100
Units
°C/W
°C/W
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AON2802
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
TJ=55°C
±10
µA
1.05
1.5
V
49
60
77
94
VGS=4.5V, ID=1A
54
68
mΩ
VGS=2.5V, ID=1A
66
88
mΩ
1
V
1.5
A
Gate-Body leakage current
VDS=0V, VGS=±10V
VDS=VGS ID=250µA
0.7
ID(ON)
On state drain current
VGS=10V, VDS=5V
8
VGS=10V, ID=2A
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=2A
12
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Crss
Units
V
1
VGS(th)
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
mΩ
S
245
pF
35
pF
20
pF
5
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
5.7
10
nC
Qg(4.5V) Total Gate Charge
2.6
5
nC
Qgs
Gate Source Charge
VGS=10V, VDS=15V, ID=2A
0.5
nC
Qgd
Gate Drain Charge
1.0
nC
tD(on)
Turn-On DelayTime
2
ns
tr
Turn-On Rise Time
3.5
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Qrr
VGS=10V, VDS=15V, RL=7.5Ω,
RGEN=3Ω
IF=2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
22
ns
3.5
ns
2
ns
nC
3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The
maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep. 2012
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Page 2 of 5
AON2802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
10V
VDS=5V
4.5V
15
15
ID(A)
ID (A)
2.5V
10
10
125°C
5
5
25°C
VGS=2.0V
0
0
0
1
2
3
4
0
5
100
2
3
4
Normalized On-Resistance
1.8
80
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
VGS=2.5V
VGS=4.5V
60
40
VGS=10V
VGS=4.5V
ID=1A
1.6
VGS=10V
ID=2A
1.4
17
5
2
VGS=2.5V
10
I =1A
1.2
D
1
0.8
20
0
2
4
0
6
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
120
1.0E+02
ID=2A
1.0E+01
100
40
1.0E+00
80
IS (A)
RDS(ON) (mΩ
Ω)
125°C
60
125°C
1.0E-01
1.0E-02
1.0E-03
40
25°C
25°C
1.0E-04
1.0E-05
20
0
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Sep. 2012
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
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AON2802
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
400
VDS=15V
ID=2A
350
8
Ciss
Capacitance (pF)
VGS (Volts)
300
6
4
250
200
150
100
Coss
2
50
0
Crss
0
0
1
2
3
4
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
6
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
200
100.0
TA=25°C
1.0
150
10µs
100µs
RDS(ON)
limited
1ms
Power (W)
ID (Amps)
10.0
100
10ms
0.1
TJ(Max)=150°C
TA=25°C
50
10s
DC
0
0.0
1E-05
0.01
0.1
1
VDS (Volts)
10
0.001
0.1
10
1000
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep. 2012
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Page 4 of 5
AON2802
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs
Ig
Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s
RL
V ds
Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf
t o ff
D iode R ecovery T est C ircuit & W aveform s
Q rr = -
V ds +
Idt
DUT
V gs
V ds -
Isd
V gs
Ig
Rev 0: Sep. 2012
L
Isd
+
VD C
-
IF
t rr
dI/dt
I RM
V dd
V dd
V ds
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Page 5 of 5