UNISONIC TECHNOLOGIES CO., LTD 3N65K-MT Power MOSFET 3A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N65K-MT is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. FEATURES * RDS(ON) < 3.8Ω @ VGS = 10 V, ID = 1.5 A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness SYMBOL ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 3N65KL-TA3-T 3N65KG-TA3-T 3N65KL-TF3-T 3N65KG-TF3-T 3N65KL-TF1-T 3N65KG-TF1-T 3N65KL-TF2-T 3N65KG-TF2-T 3N65KL-TF3T-T 3N65KG-TF3T-T 3N65KL-TM3-T 3N65KG-TM3-T 3N65KL-TMS-T 3N65KG-TMS-T 3N65KL-TN3-R 3N65KG-TN3-R 3N65KL-TND-R 3N65KG-TND-R Pin Assignment: G: Gate D: Drain S: Source 3N65KL-TA3-T Package TO-220 TO-220F TO-220F1 TO-220F2 TO-220F3 TO-251 TO-251S TO-252 TO-252D Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tube Tube Tape Reel Tape Reel (1) T: Tube, R: Tape Reel (1)Packing Type (2)Package Type (3)Green Package www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd (2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1, TF2: TO-220F2, TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S, TN3: TO-252, TND: TO-252D (3) L: Lead Free, G: Halogen Free and Lead Free 1 of 7 QW-R502-837.F 3N65K-MT Power MOSFET MARKING UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 7 QW-R502-837.F 3N65K-MT Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.0 A Continuous Drain Current ID 3.0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 90 mJ Avalanche Energy 7.5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns TO-220 75 TO-220F/TO-220F1 34 TO-220F3 PD Power Dissipation W TO-220F2 35 TO-251/TO-251S 50 TO-252/TO-252D Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ. 3. L=20mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C 4. ISD≤3.0A, di/dt≤200A/μs, VDD≤ BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER TO-220/TO-220F TO-220F1/TO-220F2 TO-220F3 Junction to Ambient TO-251/TO-251S TO-252/TO-252D TO-220 TO-220F/TO-220F1 TO-220F3 Junction to Case TO-220F2 TO-251/TO-251S TO-252/TO-252D UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw SYMBOL RATING UNIT 62.5 θJA °C/W 110 1.67 3.68 θJC 3.58 °C/W 2.5 3 of 7 QW-R502-837.F 3N65K-MT Power MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS BVDSS IDSS VGS = 0 V, ID = 250 μA VDS = 650 V, VGS = 0 V Forward VGS = 30 V, VDS = 0 V Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 μA Static Drain-Source On-State Resistance RDS(ON) VGS = 10V, ID = 1.5A DYNAMIC CHARACTERISTICS Input Capacitance CISS VDS = 25V, VGS = 0V, Output Capacitance COSS f = 1MHz Reverse Transfer Capacitance CRSS SWITCHING CHARACTERISTICS Turn-On Delay Time tD(ON) VDD = 30V, ID = 0.5A, Turn-On Rise Time tR RG = 25Ω (Note 1, 2) Turn-Off Delay Time tD(OFF) Turn-Off Fall Time tF Total Gate Charge QG VDS= 50V,ID= 1.3A, Gate-Source Charge QGS VGS= 10 V (Note 1, 2) Gate-Drain Charge QDD SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS = 3.0 A Maximum Continuous Drain-Source Diode IS Forward Current Maximum Pulsed Drain-Source Diode ISM Forward Current Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 650 0.6 2.0 V 10 μA 100 nA -100 nA V/°C 2.79 4.0 3.8 V Ω 303 41 5.1 500 65 15 pF pF pF 43 60 28 50 120 150 45 70 13.6 16 5.5 2.4 ns ns ns ns nC nC nC 1.4 V 3.0 A 12 A 4 of 7 QW-R502-837.F 3N65K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Same Type as D.U.T. Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 7 QW-R502-837.F 3N65K-MT Power MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDD VGS RG D.U.T. 10V Pulse Width≤ 1μs Duty Factor≤0.1% Switching Test Circuit Switching Waveforms QG 10V QGS QGD VGS Charge Gate Charge Test Circuit Gate Charge Waveform Unclamped Inductive Switching Test Circuit Unclamped Inductive Switching Waveforms UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 6 of 7 QW-R502-837.F 3N65K-MT Power MOSFET TYPICAL CHARACTERISTICS Maximum Drain Current vs. Case Temperature Transient Thermal Response Curve 3.0 1 2.5 D=0.5 2.0 0.2 0.1 0.1 1.5 0.05 0.02 1.0 0.01 Notes: 1. θJC (t) = 1.18°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×θJC (t) Single Pulse 0.01 0.5 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec) 0 25 50 75 100 125 Case Temperature, TC (°C) 150 Safe Operating Area Operation in This Area is Limited by RDS(on) 101 100µs 1ms 10ms 100 DC 10-1 10-2 100 Notes: 1. TJ=25°C 2. TJ=150°C 3. Single Pulse 101 102 650 103 Drain-Source Voltage, VDS (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 7 of 7 QW-R502-837.F