Datasheet

UNISONIC TECHNOLOGIES CO., LTD
4N60K
Power MOSFET
4.0A, 600V N-CHANNEL
POWER MOSFET

DESCRIPTION
The UTC 4N60K is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and have a high
rugged avalanche characteristics. This power MOSFET is usually
used at high speed switching applications in power supplies,
PWM motor controls, high efficient DC to DC converters and
bridge circuits.

FEATURES
* RDS(ON) < 2.5Ω @VGS = 10 V
* Ultra Low Gate Charge ( typical 15 nC )
* Low Reverse Transfer CAPACITANCE ( CRSS = typical 8.0 pF )
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, high Ruggedness

SYMBOL
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QW-R502-806.F
4N60K
Power MOSFET
ORDERING INFORMATION

Note:
Ordering Number
Lead Free
Halogen Free
4N60KL-TA3-T
4N60KG-TA3-T
4N60KL-TF3-T
4N60KG-TF3-T
4N60KL-TF1-T
4N60KG-TF1-T
4N60KL-TF3T-T
4N60KG-TF3T-T
4N60KL-TM3-T
4N60KG-TM3-T
4N60KL-TMS-T
4N60KG-TMS-T
4N60KL-TN3-R
4N60KG-TN3-R
Pin Assignment: G: Gate
D: Drain
S: Source
4N60KL-TA3-T
TO-220
TO-220F
TO-220F1
TO-220F3
TO-251
TO-251S
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tube
Tube
Tube
Tape Reel
(1) T: Tube, R: Tape Reel
(1)Packing Type
(2)Package Type
(3)Green Package

Package
(2) TA3: TO-220, TF3: TO-220F, TF1: TO-220F1,
TF3T: TO-220F3, TM3: TO-251, TMS: TO-251S
TN3: TO-252
(3) L: Lead Free, G: Halogen Free and Lead Free
MARKING
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QW-R502-806.F
4N60K

Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
VDSS
600
V
Gate-Source Voltage
VGSS
±30
V
Avalanche Current (Note 2)
IAR
4.4
A
Continuous
ID
4.0
A
Drain Current
16
A
Pulsed (Note 2)
IDM
Single Pulsed (Note 3)
EAS
100
mJ
Avalanche Energy
10.6
mJ
Repetitive (Note 2)
EAR
Peak Diode Recovery dv/dt (Note 4)
dv/dt
4.5
V/ns
TO-220
106
W
TO-220F/TO-220F1
36
W
Power Dissipation
PD
TO-220F3
TO-251/TO-251S
50
W
TO-252
Junction Temperature
TJ
+150
°С
Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature
3. L = 12.5mH, IAS = 4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
4. ISD≤4.4A, di/dt ≤200A/μs, VDD≤BVDSS, Starting TJ = 25°C

THERMAL DATA
PARAMETER
TO-220/TO-220F
TO-220F1/TO-220F3
Junction to Ambient
TO-251/TO-251S
TO-252
TO-220
TO-220F/TO-220F1
Junction to Case
TO-220F3
TO-251/TO-251S
TO-252
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SYMBOL
RATINGS
UNIT
62.5
°С/W
83
°С/W
1.18
°С/W
3.47
°С/W
2.5
°С/W
θJA
θJc
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Power MOSFET
ELECTRICAL CHARACTERISTICS (TC =25°С, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNIT
BVDSS
VGS=0V, ID=250μA
600
VDS=600V, VGS=0V
Drain-Source Leakage Current
IDSS
VDS=600V, VGS=0V, TC=125°С
Forward
VGS=30V, VDS=0V
Gate-Source Leakage Current
IGSS
Reverse
VGS= -30V, VDS=0V
Breakdown Voltage Temperature Coefficient △BVDSS/△TJ ID=250μA,Referenced to 25°C
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=250μA
3.0
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10 V, ID=2.2A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD = 300V, ID = 4.0A,
RG = 25Ω (Note 1, 2)
Turn-Off Delay Time
tD(OFF)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS= 480V,ID= 4.0A,
Gate-Source Charge
QGS
VGS= 10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Drain-Source Diode Forward Voltage
VSD
VGS = 0V, IS = 4.0A
Reverse Recovery Time
trr
VGS = 0 V, IS = 4.0A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
Qrr
Notes: 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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0.6
V
10
μA
10
μA
100 nA
-100 nA
V/°С
2.2
5.0
2.5
V
Ω
520
70
8
670
90
11
pF
pF
pF
13
45
25
35
15
3.4
7.1
35
100
60
80
20
ns
ns
ns
ns
nC
nC
nC
4.0
A
17.6
A
1.4
V
ns
μC
250
1.5
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS
D.U.T.
+
VDS
-
+
-
L
RG
Driver
VGS
VDD
* dv/dt controlled by RG
* ISD controlled by pulse period
* D.U.T.-Device Under Test
Same Type
as D.U.T.
Peak Diode Recovery dv/dt Test Circuit
VGS
(Driver)
Period
D=
P.W.
P. W.
Period
VGS= 10V
IFM, Body Diode Forward Current
ISD
(D.U.T.)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(D.U.T.)
VDD
Body Diode
Forward Voltage Drop
Peak Diode Recovery dv/dt Waveforms
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Power MOSFET
TEST CIRCUITS AND WAVEFORMS (Cont.)
VDS
90%
VGS
10%
tD(ON)
tD(OFF)
tF
tR
Switching Test Circuit
Switching Waveforms
VGS
QG
10V
QGS
QGD
Charge
Gate Charge Test Circuit
Gate Charge Waveform
BVDSS
IAS
ID(t)
VDS(t)
VDD
tp
Unclamped Inductive Switching Test Circuit
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Time
Unclamped Inductive Switching Waveforms
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TYPICAL CHARACTERISTICS
Drain-Source On-Resistance,
RDS(ON) (Normalized) (Ω)
Drain-Source Breakdown Voltage,
BVDSS (Normalized) (V)

Power MOSFET
On-State Characteristics
10
VGS
10V
9V
8V
7V
6V
5.5V
5 V Bottorm:5.0V
Transfer Characteristics
10
Top:
25°С
1
5.0V
150°С
1
0.1
Notes:
1. 250µs Pulse Test
2. TC=25°С
0.1
1
10
Drain-to-Source Voltage, VDS (V)
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Notes:
1. VDS=50V
2. 250µs Pulse Test
0.1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
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TYPICAL CHARACTERISTICS(Cont.)
Capacitance Characteristics
(Non-Repetitive)
1200
1000
12
10
Ciss
800
600
Gate Charge Characteristics
Ciss=Cgs+Cgd (Cds=shorted)
Coss=Cds+Cgd Crss=Cgd
Coss
Notes:
1. VGS=0V
2. f = 1MHz
0
0.1
VDS=120V
6
4
400
200
VDS=300V
VDS=480V
8
2
Crss
Note: ID=4A
0
1
0
10
5
10
15
20
25
Total Gate Charge, QG (nC)
Drain-SourceVoltage, VDS (V)
PD (w)
Thermal Response, θJC (t)

Power MOSFET
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QW-R502-806.F
4N60K
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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