KSMP7342 KERSMI ELECTRONIC CO.,LTD. -55V P-channel MOSFET Description This P-channel MOSFETS use advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications. Features BVDSS RDSON -55V 0.105Ω ID -3.4A 1) 2) Low gate charge. Green device available. 3) 4) Advanced high cell denity trench technology for ultra RDS(ON) Excellent package for good heat dissipation. SOP-8 Absolute Maximum Ratings TC=25℃,unless otherwise noted Symbol Parameter Ratings Units VDS Drain-Source Voltage -55 VGS Gate-Source Voltage ±20 V V Continuous Drain Current-1 -3.4 Continuous Drain Current-T=100℃ -2.7 Pulsed Drain Current2 -27 EAS Single Pulse Avalanche Energy3 — PD Power Dissipation4 2.0 TJ, TSTG Operating and Storage Junction Temperature -55 to Range +150 ID A mJ W ℃ Thermal Characteristics www.kersemi.com 1 KSMP7342 KERSMI ELECTRONIC CO.,LTD. -55V Symbol Parameter RƟJC Thermal Resistance ,Junction to Case1 RƟJA Thermal Resistance, Junction to Ambient1 P-channel MOSFET Ratings Units 62.5 ℃/W — Package Marking and Ordering Information Part NO. Marking Package KSMP7342 KSMP7342 SOP-8 Electrical Characteristics TC=25℃ Symbol Parameter unless otherwise noted Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Sourtce Breakdown Voltage VDS=0V,ID=250μA -55 — — IDSS Zero Gate Voltage Drain Current VDS=0V, VDS=32V — — -2.0 IGSS Gate-Source Leakage Current VDS=±20V, VDS=0A — — ±100 v μA nA VDS=VDS, ID=250μA -1.0 — — V VDS=10V,ID=6A — 0.095 0.105 VDS=2.5V,ID=5A — 0.150 0.17 VDS=5V,ID=12A 3.3 — — — 690 — — 210 — — 86 — — 14 22 — 10 15 — 43 64 On Characteristics VGS(th) GATE-Source Threshold Voltage RDS(ON) Drain-Source On Resistance² GFS Forward Transconductance Ω S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=15V,VGS=0V, f=1MHz pF Switching Characteristics td(off) Turn-Off Delay Time tf Fall Time — 22 32 Qg Total Gate Charge — 26 38 Qgs Gate-SourceCharge VGS=4.5V, VDS=20V, — 3.0 4.5 Qgd Gate-Drain “Miller” Charge ID=6A — 8.4 13 ns ns ns ns nC nC nC — — -1.2 V — 54 80 ns — 85 130 nC td(on) Turn-On Delay Time tr Rise Time VDS=20V, VGS=10V,RGEN=3.3Ω Drain-Source Diode Characteristics VSD Source-Drain Diode ForwardVoltage² trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS=0V,IS =1A IF=7A,di/dt=100A/μS www.kersemi.com 2 KSMP7342 KERSMI ELECTRONIC CO.,LTD. -55V P-channel MOSFET Notes: 1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper. 2. The data tested by pulse width≤300us,duty cycle≤2% 3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A 4. The power dissipation is limited by 150℃ junction temperature. Typical Characteristics TJ=25℃ Fig 1. Typical Output Characteristics Fig 3. Typical Transfer Characteristics Temperature unless otherwise noted Fig 2. Typical Output Characteristics Fig 4. Normalized On-Resistance Vs. www.kersemi.com 3 KSMP7342 KERSMI ELECTRONIC CO.,LTD. -55V Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 7. Typical Source-Drain Diode Forward Voltage P-channel MOSFET Fig 6. Typical Gate Charge vs. Drain-to-Source Voltage Fig 8. Maximum Safe Operating Area Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.kersemi.com 4