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KSMP7342
KERSMI ELECTRONIC CO.,LTD.
-55V
P-channel MOSFET
Description
This P-channel MOSFETS use advanced trench technology and design to provide
excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features
BVDSS
RDSON
-55V
0.105Ω
ID
-3.4A
1)
2)
Low gate charge.
Green device available.
3)
4)
Advanced high cell denity trench technology for ultra RDS(ON)
Excellent package for good heat dissipation.
SOP-8
Absolute Maximum Ratings TC=25℃,unless otherwise noted
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
-55
VGS
Gate-Source Voltage
±20
V
V
Continuous Drain Current-1
-3.4
Continuous Drain Current-T=100℃
-2.7
Pulsed Drain Current2
-27
EAS
Single Pulse Avalanche Energy3
—
PD
Power Dissipation4
2.0
TJ, TSTG
Operating and Storage Junction Temperature
-55 to
Range
+150
ID
A
mJ
W
℃
Thermal Characteristics
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KSMP7342
KERSMI ELECTRONIC CO.,LTD.
-55V
Symbol
Parameter
RƟJC
Thermal Resistance ,Junction to Case1
RƟJA
Thermal Resistance, Junction to Ambient1
P-channel MOSFET
Ratings
Units
62.5
℃/W
—
Package Marking and Ordering Information
Part NO.
Marking
Package
KSMP7342
KSMP7342
SOP-8
Electrical Characteristics TC=25℃
Symbol
Parameter
unless otherwise noted
Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Sourtce Breakdown Voltage
VDS=0V,ID=250μA
-55
—
—
IDSS
Zero Gate Voltage Drain Current
VDS=0V, VDS=32V
—
—
-2.0
IGSS
Gate-Source Leakage Current
VDS=±20V, VDS=0A
—
—
±100
v
μA
nA
VDS=VDS, ID=250μA
-1.0
—
—
V
VDS=10V,ID=6A
—
0.095
0.105
VDS=2.5V,ID=5A
—
0.150
0.17
VDS=5V,ID=12A
3.3
—
—
—
690
—
—
210
—
—
86
—
—
14
22
—
10
15
—
43
64
On Characteristics
VGS(th)
GATE-Source Threshold Voltage
RDS(ON)
Drain-Source On Resistance²
GFS
Forward Transconductance
Ω
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS=15V,VGS=0V,
f=1MHz
pF
Switching Characteristics
td(off)
Turn-Off Delay Time
tf
Fall Time
—
22
32
Qg
Total Gate Charge
—
26
38
Qgs
Gate-SourceCharge
VGS=4.5V, VDS=20V,
—
3.0
4.5
Qgd
Gate-Drain “Miller” Charge
ID=6A
—
8.4
13
ns
ns
ns
ns
nC
nC
nC
—
—
-1.2
V
—
54
80
ns
—
85
130
nC
td(on)
Turn-On Delay Time
tr
Rise Time
VDS=20V,
VGS=10V,RGEN=3.3Ω
Drain-Source Diode Characteristics
VSD
Source-Drain Diode ForwardVoltage²
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS=0V,IS =1A
IF=7A,di/dt=100A/μS
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KSMP7342
KERSMI ELECTRONIC CO.,LTD.
-55V
P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch ²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max.rating.The test condition is V DD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150℃ junction temperature.
Typical Characteristics TJ=25℃
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Temperature
unless otherwise noted
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs.
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KSMP7342
KERSMI ELECTRONIC CO.,LTD.
-55V
Fig 5. Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7. Typical Source-Drain Diode
Forward Voltage
P-channel MOSFET
Fig 6. Typical Gate Charge vs.
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 9. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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