18N25 UNISONIC TECHNOLOGIES CO., LTD Power MOSFET 18A, 250V N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220F The UTC 18N25 is an N-channel enhancement mode power MOSFET using UTC’s advanced planar stripe and DMOS technology to provide perfect performance. This technology can withstand high energy pulse in the avalanche and commutation mode. It can provide minimum on-state resistance and high switching speed. This device is generally applied in active power factor correction and high efficient switched mode power supplies. 1 TO-263 FEATURES * R DS(ON) =0.16Ω @ V GS =10V * High switching speed SYMBOL 2.Drain 1.Gate 3.Source ORDERING INFORMATION Ordering Number Lead Free Halogen Free 18N25L-TF3-T 18N25G-TF3-T 18N25L-TQ2-T 18N25G-TQ2-T 18N25L-TQ2-R 18N25G-TQ2-R Note: Pin Assignment: G: Gate D: Drain S: Source Package TO-220F TO-263 TO-263 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tube Tape Reel 18N25L-TA3-T (1) Packing Type (1) T: Tube, R: Tape Reel (2) Package Type (2) TF3: TO-220F, TQ2: TO-263 (3) Lead Free (3) L: Lead Free, G: Halogen Free www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-786.B 18N25 Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain to Source Voltage V DSS 250 V Gate to Source Voltage V GSS ±20 V Continuous ID 18 A Drain Current Pulsed (Note 2) I DM 72 A Avalanche Energy Single Pulsed (Note 3) E AS 945 mJ Avalanche Current (Note 2) I AR 18 A TO-220F 40 W Power Dissipation PD TO-263 138 °C Junction Temperature TJ +150 °C Storage Temperature T STG -55 ~ +150 °C Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating: Pulse width limited by maximum junction temperature 3. Starting T J =25°C , L=5.2mH, I AS =18A, V DD =50V, R G =25Ω. 4. Drain current limited by maximum junction temperature. THERMAL DATA PARAMETER Junction to Ambient TO-220F Junction to Case TO-263 SYMBOL θ JA θ Jc RATINGS 62.5 3.1 0.9 UNIT °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (T C =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS V GS =0V, I D =250µA Drain-Source Leakage Current I DSS V DS =250V, V GS =0V Forward V GS =20V, V DS = 0V Gate-Source Leakage Current I GSS Reverse V GS = -20V, V DS = 0V ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) V DS =V GS , I D =250µA Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =18A DYNAMIC PARAMETERS Input Capacitance C ISS Output Capacitance C OSS V DS =25V,V GS =0V,f=1.0MHz Reverse Transfer Capacitance C RSS SWITCHING PARAMETERS Total Gate Charge QG V DS =125V, V GS =10V, Gate-Source Charge Q GS I D =18A (Note 1,2) Gate-Drain Charge Q GD Turn-ON Delay Time t D(ON) Turn-ON Rise Time tR V DD =30V, I D =18A, R G =25Ω (Note 1,2) Turn-OFF Delay Time t D(OFF) Turn-OFF Fall Time tF SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current I SM Drain-Source Diode Forward Voltage V SD I S =18A, V GS =0V Note: 1. Pulse Test : Pulse width≤300μs, Duty cycle≤2% 2. Essentially independent of operating temperature UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN TYP MAX UNIT 250 1 100 -100 2.0 V µA nA 4.0 0.16 0.24 V Ω 2200 2860 330 430 25 40 pF pF pF 30 10 10 15 130 30 100 25 195 45 150 nC nC nC ns ns ns ns 18 72 1.4 A A V 45 2 of 5 QW-R502-786.B 18N25 Power MOSFET TEST CIRCUITS AND WAVEFORMS + DUT VDS RG L - ISD VGS VDD Driver Same Type as DUT dv/dt controlled by RG ISD controlled by pulse period Peak Diode Recovery dv/dt Test Circuit & Waveforms VGS (Driver) D= Gate Pulse Width Gate Pulse Period 10V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current VDS (DUT) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 5 QW-R502-786.B 18N25 Power MOSFET TEST CIRCUITS AND WAVEFORMS(Cont.) Gate Charge VGS Same Type as DUT QG 12V 10V 200nF 50kΩ VDS 300nF QGS QGD VGS DUT 3mA Charge Test Circuit Waveforms Resistive Switching VDS RG VDS VGS 10V 90% RD VDD 10% VGS DUT td(ON) tR td(OFF) tF tON Test Circuit tOFF Waveforms Unclamped Inductive Switching 2 EAS= 1 2 LIAS VDS RG BVDSS BVDSS-VDD BVDSS ID L IAS 10V ID(t) DUT tP VDD VDD VDS(t) tP Test Circuit UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw Time Waveforms 4 of 5 QW-R502-786.B 18N25 Power MOSFET TYPICAL CHARACTERISTICS Drain Current, ID (µA) 300 Drain Current vs. Drain-Source Breakdown Voltage Drain Current vs. Gate Threshold Voltage 300 250 250 Drain Current, ID (µA) 200 150 100 200 150 100 50 50 0 0 0 0 60 180 240 300 120 Drain-Source Breakdown Voltage, BVDSS (V) Drain-Source On-State Resistance Characteristics 0.6 1.8 2.4 1.2 3.0 3.6 Gate Threshold Voltage, VTH (V) Drain Current vs. Source to Drain Voltage 20 25 Drain Current, ID (A) Drain Current, ID (A) VGS=10V, ID=14A 16 12 8 20 15 10 5 4 0 0 2.5 0.5 1 1.5 2 Drain to Source Voltage, VDS (V) 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Source to Drain Voltage, VSD (V) UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 5 of 5 QW-R502-786.B